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Deng Wen-Juan, Zhu Bin, Wang Zhuang-Fei, Peng Xin-Cun, Zou Ji-Jun.Resolution characteristics of varying doping and varying composition AlxGa1–xAs/GaAs reflective photocathodes. Acta Physica Sinica, 2022, 71(15): 157901.doi:10.7498/aps.71.20220244 |
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Hu Xing-Lei, Sun Ya-Zhou, Liang Ying-Chun, Chen Jia-Xuan.Performance evolution process of machined surface of monocrystalline silicon micro/nanostructures. Acta Physica Sinica, 2013, 62(22): 220704.doi:10.7498/aps.62.220704 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Cheng Zheng-Fu, Long Xiao-Xia, Zheng Rui-Lun.The influence of anharmonicity on the surface effect in nanodiamond. Acta Physica Sinica, 2012, 61(10): 106501.doi:10.7498/aps.61.106501 |
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Shu Yu, Zhang Yan, Zhang Jian-Min.First-principles analysis of properties of Cu surfaces. Acta Physica Sinica, 2012, 61(1): 016108.doi:10.7498/aps.61.016108 |
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Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia.Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures. Acta Physica Sinica, 2011, 60(3): 036103.doi:10.7498/aps.60.036103 |
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Liang Ying-Xin, Li Wei-Feng, Wei Jian-Hua, Jin Yong.Bipolaron mechanism of DX center in AlxGa1-xAs:Si. Acta Physica Sinica, 2010, 59(12): 8850-8855.doi:10.7498/aps.59.8850 |
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Luo Wen-Hua, Meng Da-Qiao, Li Gan, Chen Hu-Chi.Density functional study of CO adsorption on Pu (100) surface. Acta Physica Sinica, 2008, 57(1): 160-164.doi:10.7498/aps.57.160 |
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Xiao Bing, Feng Jing, Chen Jing-Chao, Yan Ji-Kang, Gan Guo-You.Study of rutile (110) surface STM image via ab initio simulation. Acta Physica Sinica, 2008, 57(6): 3769-3774.doi:10.7498/aps.57.3769 |
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Wang Chuan-Dao.Electronic structure in GaAs/AlxGa1-xAs spherical quantum dots. Acta Physica Sinica, 2008, 57(2): 1091-1096.doi:10.7498/aps.57.1091 |
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Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao.Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica, 2004, 53(2): 596-600.doi:10.7498/aps.53.596 |
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MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
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Li Na, Yuan Xian-Zhang, Li Ning, Lu Wei, Li Zhi-Feng, Dou Hong-Fei, Shen Xue-Chu, Jin Li, Li Hong-Wei, Zhou Jun-Ming, Huang Yi.. Acta Physica Sinica, 2000, 49(4): 797-801.doi:10.7498/aps.49.797 |
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BAN DA-YAN, FANG RONG-CHUAN, LI YONG-PING, ZHANG HAI-FENG.THE STUDY OF THE ELECTRONIC STRUCTURE OF ZnSe(100) POLAR SURFACE. Acta Physica Sinica, 1997, 46(4): 767-774.doi:10.7498/aps.46.767 |
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CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING.PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306.doi:10.7498/aps.45.304 |
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CHEN WEI-DE, GUI YU-DE.DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS. Acta Physica Sinica, 1994, 43(4): 673-677.doi:10.7498/aps.43.673 |
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WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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PAN SHAO-HUA, CHEN ZHENG-HAO, FENG SI-MIN, CUI DA-FU, YANG GUO-ZHEN.STUDY OF INTERSUBBAND OPTICAL TRANSITIONS IN GaAs/AlxGa1-xAs SUPERLATTICES. Acta Physica Sinica, 1990, 39(12): 2011-2018.doi:10.7498/aps.39.2011 |
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ZHONG ZHAN-TIEN, XING YI-RONG, TU XING-ZHENG.XPS AND AES STUDY OF AlxGa1-xP SOLID SOLUTIONS. Acta Physica Sinica, 1985, 34(10): 1363-1367.doi:10.7498/aps.34.1363 |
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XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN.THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica, 1983, 32(10): 1339-1343.doi:10.7498/aps.32.1339 |
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