The δ-doped GaAs/AlxGa1-xAs 2DEG samples are grown with molecular beam epitaxy. In this process, the doping concentration (Nd), spatial isolation layer thickness (Wd) and Al component of AlxGa1-xAs (xAl) are changed separately. Then Hall measurements on the samples are made in the two temperature conditions (300 and 78 K). According to the test results, the relationships of Nd, Wd and xAl to the carrier density and mobility of GaAs/AlxGa1-xAs 2DEG are discussed respectively. The δ-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dot samples are grown, and InAs quantum dots with different densities are grown with gradient growth method. The Hall measurement results show that the mobility of GaAs/AlxGa1-xAs 2DEG greatly decreases with density of InAs quantum dots steadily increasing. In experiments, the lowest density of 16×108/cm2 InAs quantum dot sample is obtained. The experimental results can provide a reference for the study and application of δ-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots.