[1] |
Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua.Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS2and GeS2. Acta Physica Sinica, 2024, 73(13): 137102.doi:10.7498/aps.73.20240530 |
[2] |
Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua.Electrical contact characteristics and regulatory effects of GaN/VSe2van der Waals heterojunction. Acta Physica Sinica, 2023, 72(16): 167101.doi:10.7498/aps.72.20230191 |
[3] |
Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo.Regulation and control of Schottky barrier in graphene/MoSe2heteojuinction by asymmetric oxygen doping. Acta Physica Sinica, 2022, 71(1): 017104.doi:10.7498/aps.71.20210238 |
[4] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin.First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica, 2022, 71(5): 058102.doi:10.7498/aps.71.20211796 |
[5] |
Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo.Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica, 2022, 71(20): 207302.doi:10.7498/aps.71.20220320 |
[6] |
Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei.Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica, 2020, 69(15): 157302.doi:10.7498/aps.69.20191987 |
[7] |
Xu Feng1\2, Yu Guo-Hao, Deng Xu-Guang, Li Jun-Shuai, Zhang Li, Song Liang, Fan Ya-Ming, Zhang Bao-Shun.Current transport mechanism of Schottky contact of Pt/Au/n-InGaN. Acta Physica Sinica, 2018, 67(21): 217802.doi:10.7498/aps.67.20181191 |
[8] |
Wu Kong-Ping, Sun Chang-Xu, Ma Wen-Fei, Wang Jie, Wei Wei, Cai Jun, Chen Chang-Zhao, Ren Bin, Sang Li-Wen, Liao Mei-Yong.Interface electronic structure and the Schottky barrier at Al-diamond interface: hybrid density functional theory HSE06 investigation. Acta Physica Sinica, 2017, 66(8): 088102.doi:10.7498/aps.66.088102 |
[9] |
Xu Li-Jun, Zhang He-Ming.Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica, 2013, 62(10): 108502.doi:10.7498/aps.62.108502 |
[10] |
Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao.A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica, 2013, 62(16): 168801.doi:10.7498/aps.62.168801 |
[11] |
Liu Ya-Jie.Prediction of the magneto-resistivity of manganese oxides La0.67Ca0.33MnO3 and Pr0.7Sr0.3MnO3 via temperature and magnetic field. Acta Physica Sinica, 2013, 62(1): 017601.doi:10.7498/aps.62.017601 |
[12] |
Shi Da-Wei, Wu Mei-Ling, Yang Chang-Ping, Ren Chun-Ling, Xiao Hai-Bo, Wang Kai-Ying.AC properties of Pr0.7Ca0.3MnO3 ceramics. Acta Physica Sinica, 2013, 62(2): 026201.doi:10.7498/aps.62.026201 |
[13] |
Chen Shun-Sheng, Yang Chang-Ping, Xiao Hai-Bo, Xu Ling-Fang, Ma Chang.Effect of doping concentration on electric-pulse- induced resistance in Nd1-xSrxMnO3 ceramics. Acta Physica Sinica, 2012, 61(14): 147301.doi:10.7498/aps.61.147301 |
[14] |
Medvedeva I, Chen Shun-Sheng, Huang Chang, Wang Rui-Long, Yang Chang-Ping.The electrical transport properties of Ag/Nd0.7Sr0.3MnO3 ceramic interface. Acta Physica Sinica, 2011, 60(3): 037304.doi:10.7498/aps.60.037304 |
[15] |
Wang Zhong-Wei, Zhang Jian, Wei Dong, Ying Zhao, Jing Zhao, Xu Chen.Improvement of resistive switching in Ti/Pr0.7Ca0.3MnO3/La0.67Sr0.33MnO3/Pt heterostructures. Acta Physica Sinica, 2011, 60(11): 117306.doi:10.7498/aps.60.117306 |
[16] |
Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao.Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica, 2010, 59(12): 8856-8861.doi:10.7498/aps.59.8856 |
[17] |
Chen Shun-Sheng, Yang Chang-Ping, Deng Heng, Sun Zhi-Gang.Microstructure dependence of the electroresistance of Nd0.7Sr0.3MnO3. Acta Physica Sinica, 2008, 57(6): 3798-3802.doi:10.7498/aps.57.3798 |
[18] |
Yang Chang-Ping, Chen Shun-Sheng, Dai Qi, Guo Ding-He, Wang Hao.Spin-dependent electroresistance in Nd0.67Sr0.33MnOy(y<3.0). Acta Physica Sinica, 2007, 56(8): 4908-4913.doi:10.7498/aps.56.4908 |
[19] |
Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei.The influence of contact metal in carbon nanotube transistor. Acta Physica Sinica, 2006, 55(10): 5460-5465.doi:10.7498/aps.55.5460 |
[20] |
LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501 |