Magneto-transport measurements have been carried out on a Si heavily δ-doped In 0.52Al0.48As/In0.53Ga0.47As single q uantum well in the temperature range between 1.5 and 60K under magnetic field up to 10T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for th e In0.52Al0.48As/In0.53Ga0.47As sing le quantum well occupied by two subbands，and have obtained the electron concent ration, mobility, effective mass and energy levels respectively. The electron co ncentrations of the two subbands derived from mobility spectrum combined with mu lti-carrier fitting analysis are well consistent with the result from the SdH os cillation. From fast Fourier transform analysis for d2ρ/dB2-1/B，it is observed that there is a frequency of f1-f2 insensitive to the temperature, besides the frequencies f1, f2 for the two subbands and the frequency doubling 2f1, both depen dent on the temperature. This is because that the electrons occupying the two di fferent subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.