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Li Qun, Chen Qian, Chong Jing.Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica, 2018, 67(2): 027303.doi:10.7498/aps.67.20171827 |
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong.Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica, 2014, 63(8): 080202.doi:10.7498/aps.63.080202 |
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Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou.Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica, 2013, 62(15): 150202.doi:10.7498/aps.62.150202 |
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Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
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Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
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Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin.Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica, 2003, 52(7): 1756-1760.doi:10.7498/aps.52.1756 |
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