| [1] |
Wu Yang, Hu Xiao, Liu Bo-Wen, Gu Yi, Zha Fang-Xing.Different spectral features near the energy bandgaps of normal and inverse heterostructures of In0.52Al0.48As/InP. Acta Physica Sinica, 2024, 73(2): 027801.doi:10.7498/aps.73.20231339 |
| [2] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen.Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica, 2019, 68(16): 166801.doi:10.7498/aps.68.20191074 |
| [3] |
Li Qun, Chen Qian, Chong Jing.Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica, 2018, 67(2): 027303.doi:10.7498/aps.67.20171827 |
| [4] |
Cui Jian-Gong, Zhang Xia, Yan Xin, Li Jun-Shuai, Huang Yong-Qing, Ren Xiao-Min.Selective-area growth of GaAs and GaAs/InxGa1-xAs/GaAs nanowires by MOCVD. Acta Physica Sinica, 2014, 63(13): 136103.doi:10.7498/aps.63.136103 |
| [5] |
Wang Hong-Pei, Wang Guang-Long, Yu Ying, Xu Ying-Qiang, Ni Hai-Qiao, Niu Zhi-Chuan, Gao Feng-Qi.Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots. Acta Physica Sinica, 2013, 62(20): 207303.doi:10.7498/aps.62.207303 |
| [6] |
Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan.Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica, 2013, 62(15): 157201.doi:10.7498/aps.62.157201 |
| [7] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou.Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica, 2013, 62(15): 150202.doi:10.7498/aps.62.150202 |
| [8] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao.Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica, 2012, 61(23): 237302.doi:10.7498/aps.61.237302 |
| [9] |
Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia.Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures. Acta Physica Sinica, 2011, 60(3): 036103.doi:10.7498/aps.60.036103 |
| [10] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Li Dong-Lin, Gao Hong-Ling, Zeng Yi-Ping, Guo Shao-Ling, Yu Guo-Lin, Chu Jun-Hao.Positive magnetoresistance in In0.53Ga0.47As/In0.52Al0.48As quantum well. Acta Physica Sinica, 2008, 57(8): 5232-5236.doi:10.7498/aps.57.5232 |
| [11] |
Tang Zhen-Kun, Wang Ling-Ling, Tang Li-Ming, You Kai-Ming, Zou Bing-Suo.Spin polarized transport of two-dimensional electron gas through step-magnetic barrier structure. Acta Physica Sinica, 2008, 57(9): 5899-5905.doi:10.7498/aps.57.5899 |
| [12] |
Shang Li-Yan, Lin Tie, Zhou Wen-Zheng, Huang Zhi-Ming, Li Dong-Lin, Gao Hong-Ling, Cui Li-Jie, Zeng Yi-Ping, Guo Shao-Ling, Chu Jun-Hao.Electron transport properties of In0.53Ga0.47As/In0.52Al0.48As quantum wells with two occupied subbands. Acta Physica Sinica, 2008, 57(4): 2481-2485.doi:10.7498/aps.57.2481 |
| [13] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
| [14] |
Zhou Wen-Zheng, Lin Tie, Shang Li-Yan, Huang Zhi-Ming, Zhu Bo, Cui Li-Jie, Gao Hong-Ling, Li Dong-Lin, Guo Shao-Ling, Gui Yong-Sheng, Chu Jun-Hao.Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si δ-doped on the barriers. Acta Physica Sinica, 2007, 56(7): 4143-4147.doi:10.7498/aps.56.4143 |
| [15] |
Zhou Wen-Zheng, Yao Wei, Zhu Bo, Qiu Zhi-Jun, Guo Shao-Ling, Lin Tie, Cui Li-Jie, Gui Yong-Sheng, Chu Jun-Hao.Magneto-transport characteristics of two-dimensional electron gas for Si δ-doped InAlAs/InGaAs single quantum well. Acta Physica Sinica, 2006, 55(4): 2044-2048.doi:10.7498/aps.55.2044 |
| [16] |
Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin.Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica, 2003, 52(7): 1756-1760.doi:10.7498/aps.52.1756 |
| [17] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO.STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica, 2000, 49(9): 1804-1808.doi:10.7498/aps.49.1804 |
| [18] |
CHEN ZHANG-HAI, HU CAN-MING, LIU PU-LIN, SHI GUO-LIANG, SHEN XUE-CHU.RESONANT SUBBAND-LANDAU-LEVEL COUPLING FOR HIGH-LYING SUBBANDS OF TWO-DIMENSIONAL ELECTRON GASES IN GaAs/AlGaAs HETEROJUNCTION. Acta Physica Sinica, 1998, 47(3): 494-501.doi:10.7498/aps.47.494 |
| [19] |
SHEN WEN-ZHONG, TANG WEN-GUO, CHANG YONG, LI ZI-YUAN, SHEN XUE-CHU, A. DIMOULAS.PHOTOLUMINESCENCE STUDIES OF MODULATION -DOPED STRAINED In0.60Ga0.40As/In0.52Al0.48As QUANTUM WELLS. Acta Physica Sinica, 1996, 45(2): 307-313.doi:10.7498/aps.45.307 |
| [20] |
WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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