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Kang Yu-Bin, Tang Ji-Long, Li Ke-Xue, Li Xiang, Hou Xiao-Bing, Chu Xue-Ying, Lin Feng-Yuan, Wang Xiao-Hua, Wei Zhi-Peng.Studies of Be, Si doping regulated GaAs nanowires for phase transition and optical properties. Acta Physica Sinica, 2021, 70(20): 207804.doi:10.7498/aps.70.20210782 |
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Wang Peng-Hua, Tang Ji-Long, Kang Yu-Bin, Fang Xuan, Fang Dan, Wang Deng-Kui, Lin Feng-Yuan, Wang Xiao-Hua, Wei Zhi-Peng.Crystal structure and optical properties of GaAs nanowires. Acta Physica Sinica, 2019, 68(8): 087803.doi:10.7498/aps.68.20182116 |
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Yuan Hui-Bo, Li Lin, Zeng Li-Na, Zhang Jing, Li Zai-Jin, Qu Yi, Yang Xiao-Tian, Chi Yao-Dan, Ma Xiao-Hui, Liu Guo-Jun.Morphology characterization and growth mechanism of Au-catalyzed GaAs and GaAs/InGaAs nanowires. Acta Physica Sinica, 2018, 67(18): 188101.doi:10.7498/aps.67.20180220 |
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Zhang Yong, Shi Yi-Min, Bao You-Zhen, Yu Xia, Xie Zhong-Xiang, Ning Feng.Effect of surface passivation on the electronic properties of GaAs nanowire:A first-principle study. Acta Physica Sinica, 2017, 66(19): 197302.doi:10.7498/aps.66.197302 |
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Wang Bao-Zhu, Zhang Xiu-Qing, Zhang Ao-Di, Zhou Xiao-Ran, Bahadir Kucukgok, Na Lu, Xiao Hong-Ling, Wang Xiao-Liang, Ian T. Ferguson.Room-temperature thermoelectric properties of GaN thin films grown by metal organic chemical vapor deposition. Acta Physica Sinica, 2015, 64(4): 047202.doi:10.7498/aps.64.047202 |
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Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou.Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method. Acta Physica Sinica, 2014, 63(11): 118103.doi:10.7498/aps.63.118103 |
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Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2013, 62(8): 086102.doi:10.7498/aps.62.086102 |
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Zhang Xiao-Qing, He Hao, Hu Ming-Lie, Yan Xin, Zhang Xia, Ren Xiao-Min, Wang Qing-Yue.Optical SHG properties of GaAs nanowires irradiated with multi-wavelength femto-second laser pulses. Acta Physica Sinica, 2013, 62(7): 076102.doi:10.7498/aps.62.076102 |
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Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia.Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures. Acta Physica Sinica, 2011, 60(3): 036103.doi:10.7498/aps.60.036103 |
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi.Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2010, 59(1): 504-507.doi:10.7498/aps.59.504 |
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Xu Sheng-Rui, Zhang Jin-Cheng, Li Zhi-Ming, Zhou Xiao-Wei, Xu Zhi-Hao, Zhao Guang-Cai, Zhu Qing-Wei, Zhang Jin-Feng, Mao Wei, Hao Yue.The triangular pits eliminate of (1120) a-plane GaN growth by metal-orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(8): 5705-5708.doi:10.7498/aps.58.5705 |
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Cui Ying-Chao, Xie Zi-Li, Zhao Hong, Mei Qin, Li Yi, Liu Bin, Song Li-Hong, Zhang Rong, Zheng You-Dou.Morphology and defect of a-GaN grown by metal orgamic chemical vapor deposition. Acta Physica Sinica, 2009, 58(12): 8506-8510.doi:10.7498/aps.58.8506 |
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Yang Fan, Ma Jin, Kong Ling-Yi, Luan Cai-Na, Zhu Zhen.Structural， optical and electrical properties of Ga2（1-x）In2xO3 films prepared by metalorganic chemical vapor deposition. Acta Physica Sinica, 2009, 58(10): 7079-7082.doi:10.7498/aps.58.7079 |
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Wang Ye-An, Qin Fu-Wen, Wu Dong-Jiang, Wu Ai-Min, Xu Yin, Gu Biao.Analysis of diluted magnetic semiconductor GaMnN grown by electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition. Acta Physica Sinica, 2008, 57(1): 508-513.doi:10.7498/aps.57.508 |
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Guo Ping-Sheng, Chen Ting, Cao Zhang-Yi, Zhang Zhe-Juan, Chen Yi-Wei, Sun Zhuo.Low temperature growth of carbon nanotubes by chemical vapor deposition for field emission cathodes. Acta Physica Sinica, 2007, 56(11): 6705-6711.doi:10.7498/aps.56.6705 |
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Zeng Chun-Lai, Tang Dong-Sheng, Liu Xing-Hui, Hai Kuo, Yang Yi, Yuan Hua-Jun, Xie Si-Shen.Controllable preparation of SnO2 one-dimensional nanostructures by chemical vapor deposition. Acta Physica Sinica, 2007, 56(11): 6531-6536.doi:10.7498/aps.56.6531 |
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Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun.Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica, 2005, 54(9): 4329-4333.doi:10.7498/aps.54.4329 |
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Ma Hong, Zhu Guang-Xi, Chen Si-Hai, Yi Xin-Jian.MOVPE growth of 1310?nm polarizationinsensitive strained quantumwell semiconductor optical amplifiers*. Acta Physica Sinica, 2004, 53(12): 4257-4261.doi:10.7498/aps.53.4257 |
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HU YING.SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica, 2001, 50(12): 2452-2455.doi:10.7498/aps.50.2452 |
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SUN LI, CHEN YAN-FENG, YU TAO, MING NAI-BEN, JIANG XIAO-MING, XIU LI-SONG.PREPARATION AND CHARACTERIZATION OF ＰｂＴｉＯ３ THIN FILMS BY METALORGANIC CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1996, 45(10): 1729-1736.doi:10.7498/aps.45.1729 |
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