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Abstract

In this paper, we investigate the effect of growth conditions on the quality of AlN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AlN buffer layer and the flow rate of carrier gas, on the lateral grain size of AlN film. It is found that the redution of nitridation time, the increase of growth time of AlN buffer layer, and the reduction of the flow rate of carrier gas can enhance the lateral growth of AlN film and coalescence of islands and increase the lateral grain size of AlN film. So the quality of AlN film is improved.

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1.
Funds:Project supported by the National Science Fund for Distinguished Young Scholars, China (Grant No. 60925017), the National Natural Science Foundation of China (Grant Nos. 10990100, 60836003, 60976045, 61176126), and the Cross-discipline Foundation of Tsinghua National Laboratory for Information Science and Technology, China.

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Cited By

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[1]	Zhao Bo-Wen, Shang Hai-Long, Chen Fan, Shi Kai-Cheng, Li Rong-Bin, Li Ge-Yang.Wetting and brazing of AlN by sputtered Al. Acta Physica Sinica, 2016, 65(8): 086801.doi:10.7498/aps.65.086801
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[10]	Zhang Feng-Kui, Ding Yong-Jie.Features of electron-wall collision frequency with saturated sheath in Hall thruster. Acta Physica Sinica, 2011, 60(6): 065203.doi:10.7498/aps.60.065203
[11]	Yuan Di, Luo Hua-Feng, Huang Duo-Hui, Wang Fan-Hou.First-principles study of Zn,O codoped p-type AlN. Acta Physica Sinica, 2011, 60(7): 077101.doi:10.7498/aps.60.077101
[12]	Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi.GaN grown on AlN/sapphire templates. Acta Physica Sinica, 2010, 59(11): 8021-8025.doi:10.7498/aps.59.8021
[13]	Lin Zhu, Guo Zhi-You, Bi Yan-Jun, Dong Yu-Cheng.Ferromagnetism and the optical properties of Cu-doped AlN from first-principles study. Acta Physica Sinica, 2009, 58(3): 1917-1923.doi:10.7498/aps.58.1917
[14]	Zhou Chun-Hong, Zheng You-Dou, Deng Yong-Zhen, Kong Yue-Chan, Chen Peng, Xi Dong-Juan, Gu Shu-Lin, Shen Bo, Zhang Rong, Jiang Ruo-Lian, Han Ping, Shi Yi.Study of interface trap states of AlN-Si(111) heterostructure*. Acta Physica Sinica, 2004, 53(11): 3888-3894.doi:10.7498/aps.53.3888
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[16]	Qin Fu-Wen, Gu Biao, Xu Yin, Yang Da-Zhi.Study on lowtemperature growth of AlN single crystal film by ECRPEMOCVD. Acta Physica Sinica, 2003, 52(5): 1240-1244.doi:10.7498/aps.52.1240
[17]	JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅲ ). Acta Physica Sinica, 2000, 49(12): 2502-2506.doi:10.7498/aps.49.2502
[18]	JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅱ ). Acta Physica Sinica, 2000, 49(12): 2498-2501.doi:10.7498/aps.49.2498
[19]	JIANG GUO-JIAN, ZHANG QING-XUE, ZHUANG HAN-RUI, LI WEN-LAN, LI MAO-ZI.STUDIES OF GRAVITY BEHAVIORS IN THE COURSE OF PRODUCING AlN AND TiC MATERIALS(Ⅰ ). Acta Physica Sinica, 2000, 49(12): 2494-2497.doi:10.7498/aps.49.2494
[20]	WANG YOU-XIANG, YUE RUI-FENG, CHEN CHUN-HUA.INTERFACIAL REACTION BETWEEN Ti THIN FILM AND AlN CERAMIC. Acta Physica Sinica, 1998, 47(1): 75-82.doi:10.7498/aps.47.75

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Vol. 62, Issue 8 - 2013-04-20

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