[1] |
Yan Shao-Qi, Gao Ji-Kun, Chen Yue, Ma Yao, Zhu Xiao-Dong.Low-density plasmas generated by electron beams passing through silicon nitride window. Acta Physica Sinica, 2024, 73(14): 144102.doi:10.7498/aps.73.20240302 |
[2] |
Li Shu-Ping, Zhang Zhi-Li, Fu Kai, Yu Guo-Hao, Cai Yong, Zhang Bao-Shun.High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics. Acta Physica Sinica, 2017, 66(19): 197301.doi:10.7498/aps.66.197301 |
[3] |
Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi.Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica, 2016, 65(8): 088501.doi:10.7498/aps.65.088501 |
[4] |
Yang Peng, Lü Yan-Wu, Wang Xin-Bo.Effect of inserted AlN layer on the two-dimensional electron gas in AlxGa1-xN/AlN/GaN. Acta Physica Sinica, 2015, 64(19): 197303.doi:10.7498/aps.64.197303 |
[5] |
Rao Xue, Wang Ru-Zhi, Cao Jue-Xian, Yan Hui.First-principles calculation of doped GaN/AlN superlattices. Acta Physica Sinica, 2015, 64(10): 107303.doi:10.7498/aps.64.107303 |
[6] |
Feng Jia-Heng, Tang Li-Dan, Liu Bang-Wu, Xia Yang, Wang Bing.Low-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition. Acta Physica Sinica, 2013, 62(11): 117302.doi:10.7498/aps.62.117302 |
[7] |
Wu Liang-Liang, Zhao De-Gang, Li Liang, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition. Acta Physica Sinica, 2013, 62(8): 086102.doi:10.7498/aps.62.086102 |
[8] |
Cao Lei, Liu Hong-Xia.Study on the self-heating effect in silicon-on-insulator devices with SOANN buried oxide. Acta Physica Sinica, 2012, 61(17): 177301.doi:10.7498/aps.61.177301 |
[9] |
Wang Xin-Hua, Zhao Miao, Liu Xin-Yu, Pu Yan, Zheng Ying-Kui, Wei Ke.The experiential fit of the capacitance-voltage characteristicsof the AlGaN/AlN/GaN high electron mobility transistors. Acta Physica Sinica, 2011, 60(4): 047101.doi:10.7498/aps.60.047101 |
[10] |
Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117304.doi:10.7498/aps.60.117304 |
[11] |
Lu Wei, Xu Ming, Wei Yi, He Lin.Investigation on the band structures of AlN/InN and AlN/GaN superlattices. Acta Physica Sinica, 2011, 60(8): 087807.doi:10.7498/aps.60.087807 |
[12] |
Yuan Di, Luo Hua-Feng, Huang Duo-Hui, Wang Fan-Hou.First-principles study of Zn,O codoped p-type AlN. Acta Physica Sinica, 2011, 60(7): 077101.doi:10.7498/aps.60.077101 |
[13] |
Ding Guo-Jian, Guo Li-Wei, Xing Zhi-Gang, Chen Yao, Xu Pei-Qiang, Jia Hai-Qiang, Zhou Jun-Ming, Chen Hong.Growth and character stics of AlGaN/GaN HEMT structures with AlN/GaN superlattices as barrier layers. Acta Physica Sinica, 2010, 59(8): 5724-5729.doi:10.7498/aps.59.5724 |
[14] |
Wang Lai, Wang Lei, Ren Fan, Zhao Wei, Wang Jia-Xing, Hu Jian-Nan, Zhang Chen, Hao Zhi-Biao, Luo Yi.GaN grown on AlN/sapphire templates. Acta Physica Sinica, 2010, 59(11): 8021-8025.doi:10.7498/aps.59.8021 |
[15] |
Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng.Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica, 2009, 58(7): 4925-4930.doi:10.7498/aps.58.4925 |
[16] |
Lin Zhu, Guo Zhi-You, Bi Yan-Jun, Dong Yu-Cheng.Ferromagnetism and the optical properties of Cu-doped AlN from first-principles study. Acta Physica Sinica, 2009, 58(3): 1917-1923.doi:10.7498/aps.58.1917 |
[17] |
Liang Shuang, Lü Yan-Wu.The calculation of electronic structure in GaN/AlN quantum dots with finite element method. Acta Physica Sinica, 2007, 56(3): 1617-1620.doi:10.7498/aps.56.1617 |
[18] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
[19] |
Yu Wei, Liu Li-Hui, Hou Hai-Hong, Ding Xue-Cheng, Han Li, Fu Guang-Sheng.Silicon nitride films prepared by helicon wave plasam-enhanced chemical vapour deposition. Acta Physica Sinica, 2003, 52(3): 687-691.doi:10.7498/aps.52.687 |
[20] |
DU XIAO-LONG, CHEN GUANG-CHAO, JIANG DE-YI, YAO XIN-ZI, ZHU HE-SUN.PROPERTIES OF ELECTRON CYCLOTRON RESONANCE PLASMAS AND THEIR INFLUENCE ON THE DEPOSITION OF GaN FILMS. Acta Physica Sinica, 1999, 48(2): 257-266.doi:10.7498/aps.48.257 |