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Zhou Ding-Bang, Liu Xin-Dian, Li Zhi-Qing.Electrical transport properties of polycrystalline TaN1- films. Acta Physica Sinica, 2015, 64(19): 197302.doi:10.7498/aps.64.197302 |
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Xie Jing, Li Bing, Li Yuan-Jie, Yan Pu, Feng Liang-Huan, Cai Ya-Ping, Zheng Jia-Gui, Zhang Jing-Quan, Li Wei, Wu Li-Li, Lei Zhi, Zeng Guang-Gen.Study of ZnS thin films prepared by RF magnetron sputtering technique. Acta Physica Sinica, 2010, 59(8): 5749-5754.doi:10.7498/aps.59.5749 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
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Liu Xing-Chong, Lu Zhi-Hai, Lu Zhong-Lin, Zhang Feng-Ming, Du You-Wei.Ferromagnetism in polycrystalline Si0.9654Mn0.0346:B thin films. Acta Physica Sinica, 2008, 57(11): 7262-7266.doi:10.7498/aps.57.7262 |
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Hu Jian-Bo, Tan Hua, Yu Yu-Ying, Dai Cheng-Da, Ran Xian-Wen.Measurements of dynamic yield strength of aluminum alloy and mechanism analysis of elastic precursor during reloading. Acta Physica Sinica, 2008, 57(1): 405-410.doi:10.7498/aps.57.405 |
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Li Yu-Hong, He De-Yan, Zhang Yu, Li Zhen-Sheng.Influence of evaporation conditions on the structure of the polycrystalline lead iodide films. Acta Physica Sinica, 2007, 56(10): 6028-6032.doi:10.7498/aps.56.6028 |
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Yang Ji-Jun, Xu Ke-Wei.Surface roughening and growth mode transition of polycrystalline thin films. Acta Physica Sinica, 2007, 56(2): 1110-1115.doi:10.7498/aps.56.1110 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong.Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica, 2006, 55(5): 2523-2528.doi:10.7498/aps.55.2523 |
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Zhang Hui, Wang Bao-Yi, Zhang Ren-Gang, Zhang Zhe, Qian Hai-Jie, Su Run, Kui Re-Xi, Wei Long.Experimental studies on the electronic structure of pyrite FeS2 films prepared by thermally sulfurizing iron films. Acta Physica Sinica, 2006, 55(5): 2482-2487.doi:10.7498/aps.55.2482 |
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Wang Yong-Gang, Chen Deng-Ping, He Hong-Liang, Wang Li-Li, Jing Fu-Qian.Temperature dependence of dynamic yield strength and spall strength for LY12 aluminum alloy under shock loading. Acta Physica Sinica, 2006, 55(8): 4202-4207.doi:10.7498/aps.55.4202 |
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Lu Jun-Yong, Jiang Zhen-Yu, Zhang Qing-Chuan, Jiang Hui-Feng, Liu Hao-Wen.Size effect on serrated yielding in Al-Cu polycrystals. Acta Physica Sinica, 2006, 55(7): 3558-3568.doi:10.7498/aps.55.3558 |
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Li Wei, Feng Liang-Huan, Wu Li-Li, Cai Ya-Ping, Zhang Jing-Quan, Zheng Jia-Gui, Cai Wei, Li Bing, Lei Zhi, Zhang Dong-Min.Preparation and properties of polycrystalline CdSxxTe1-x1-x thin films for solar cells. Acta Physica Sinica, 2005, 54(4): 1879-1884.doi:10.7498/aps.54.1879 |
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Peng Jian-Xiang, Jing Fu-Qian, Wang Li-Li, Li Da-Hong.Pressure and temperature dependence of shear modulus and yield strength for aluminum, copper and tungsten under shock compression. Acta Physica Sinica, 2005, 54(5): 2194-2197.doi:10.7498/aps.54.2194 |
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LIU WEI-GUO, KONG LING-BING, ZHANG LIANG-YING, YAO XI.PHASE TRANSITION IN POLYCRYSTALLINE FERROELECTRIC THIN FILMS——STRESS AND SIZE EFFECTS. Acta Physica Sinica, 1996, 45(2): 318-323.doi:10.7498/aps.45.318 |
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ZHANG YUE-LU, BI SI-YUN, MEI LIANG-MO, LUAN KAI-ZHENG, LIU YI-HUA.STUDIES ON THE AMORPHOUS STATE FORMATION EFFECT OF BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON THIN FILMS. Acta Physica Sinica, 1988, 37(8): 1373-1375.doi:10.7498/aps.37.1373 |
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.ФОТОПРОВОДИМОСТЬ ПОЛИКРИСТАЛЛИЧЕСКИХ СЛОЕВ СЕРНИСТОЙ СУРЬМЫ. Acta Physica Sinica, 1962, 18(5): 254-258.doi:10.7498/aps.18.254 |
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