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Wang Rui, Hu Xiao-Jun.The microstructural and electrochemical properties of oxygen ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2014, 63(14): 148102.doi:10.7498/aps.63.148102 |
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Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
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Wang Feng-Hao, Hu Xiao-Jun.Microstructural and photoelectrical properties of oxygen-ion-implanted microcrystalline diamond films. Acta Physica Sinica, 2013, 62(15): 158101.doi:10.7498/aps.62.158101 |
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Huang Yong-Xian, Leng Jin-Song, Tian Xiu-Bo, Lü Shi-Xiong, Li Yao.The study on adaptability and effect of mesh-inducing for plasma immersion ion implantation on non-conductor polymer. Acta Physica Sinica, 2012, 61(15): 155206.doi:10.7498/aps.61.155206 |
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Hu Xiao-Jun, Hu Heng, Chen Xiao-Hu, Xu Bei.The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2011, 60(6): 068101.doi:10.7498/aps.60.068101 |
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Yang Xin-An, Li Jian-Qi, Ding Peng, Liu Fa-Min.Microstructure and magnetic properties of the cobalt ions implanted TiO2 films. Acta Physica Sinica, 2011, 60(3): 036803.doi:10.7498/aps.60.036803 |
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
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Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang.Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica, 2005, 54(10): 4633-4637.doi:10.7498/aps.54.4633 |
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Zhang Gu-Ling, Wang Jiu-Li, Yang Wu-Bao, Fan Song-Hua, Liu Chi-Zi, Yang Si-Ze.TiN coating for inner surface modification by grid enhanced plasma source ion im plantation. Acta Physica Sinica, 2003, 52(9): 2213-2218.doi:10.7498/aps.52.2213 |
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng.. Acta Physica Sinica, 2002, 51(3): 629-634.doi:10.7498/aps.51.629 |
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Li Bai-Gui.. Acta Physica Sinica, 2000, 49(3): 560-564.doi:10.7498/aps.49.560 |
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ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU.ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica, 1998, 47(11): 1923-1927.doi:10.7498/aps.47.1923 |
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WANG GUO-MEI, YUN HUAI-SHUN, JIANG BING, LI XING-DAN, WU DAI-HUA, YANG SHENG-RONG.STRUCTURE AND SURFACE ELECTRICAL PROPERTIES OF POLYCRYSTALLINE ZrO2 IMPLANTED BY Ni ION. Acta Physica Sinica, 1996, 45(7): 1160-1167.doi:10.7498/aps.45.1160 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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ZHANG JIAN-HUA, LIU ZENG-SHAN, QIN YONG-ZHI.A STUDY OF ZINC DIFFUSION IN ION-IMPLANTED POLYCRY-STALLINE ALUMINIUM. Acta Physica Sinica, 1992, 41(9): 1474-1481.doi:10.7498/aps.41.1474 |
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LI SHI-PU, FAN DONG-HUI, WANG GUO-MEI, XING NING, REN WEI.X-RAY PHOTOELECTRON SPECTROSCOPY STUDY OF Fe ION IMPLANTED POLYCRYSTALLINE Al2O3. Acta Physica Sinica, 1991, 40(6): 857-861.doi:10.7498/aps.40.857 |
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LlU JIA-RUI, ZHANG JIAN-HUA, LI YI.THE EFFECT OF ANHARMONIC INTERACTIONS AMONG LATTICE ATOMS ON THE ION IMPLANTATION. Acta Physica Sinica, 1989, 38(9): 1400-1405.doi:10.7498/aps.38.1400 |
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CHEN GUO-MING, CHEN GUO-LIANG, YANG JIE, ZOU SHI-CHANG.INVESTIGATION OF THIN FILM Si3N4 FORMED BY LOW ENERGY ION IMPLANTATION. Acta Physica Sinica, 1988, 37(3): 475-480.doi:10.7498/aps.37.475 |
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ZHANG YUE-LU, MEI LIANG-MO, GUO YI-CHENG, GUO XIAO-QIN, CONG PEI-JIE.STUDIES ON PRODUCING AMORPHOUS ALLOY LAYERS BY BORON ION IMPLANTATION INTO POLYCRYSTALLINE IRON FILMS. Acta Physica Sinica, 1986, 35(7): 850-854.doi:10.7498/aps.35.850 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |