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Yi You-Gen, Wang Yu-Ying, Hu Qi-Feng, Zhang Yan-Bin, Peng Yong-Yi, Lei Hong-Wen, Peng Li-Ping, Wang Xue-Min, Wu Wei-Dong.Structural and photoluminescence characteristics of ZnCdO/ZnO single quantum well. Acta Physica Sinica, 2016, 65(5): 057802.doi:10.7498/aps.65.057802 |
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Cai Chun-Feng, Wu Hui-Zhen, Si Jian-Xiao, Sun Yan, Dai Ning.Mid-infrared photoluminescence of PbSe/PbSrSe multiple quantum wells grown by molecular beam epitaxy. Acta Physica Sinica, 2009, 58(5): 3560-3564.doi:10.7498/aps.58.3560 |
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Song Ying-Xin, Zheng Wei-Min, Liu Jing, Chu Ning-Ning, Li Su-Mei.Effect of quantum confinement on acceptor state lifetime in Be δ doped GaAs/AlAs multiple quantum wells. Acta Physica Sinica, 2009, 58(9): 6471-6476.doi:10.7498/aps.58.6471 |
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Xin Ping, Sun Cheng-Wei, Qin Fu-Wen, Wen Sheng-Ping, Zhang Qing-Yu.Room-temperature photoluminescence of ZnO/MgO multiple quantum wells deposited by reactive magnetron sputtering. Acta Physica Sinica, 2007, 56(2): 1082-1087.doi:10.7498/aps.56.1082 |
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Miao Zhuang, Li Shan-Feng, Zhang Qing-Yu.Effect of Y co-doping on the photoluminescence and lifetime of Er3+ in silicate glasses. Acta Physica Sinica, 2006, 55(8): 4321-4326.doi:10.7498/aps.55.4321 |
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Tan Na, Duan Shu-Qing, Zhang Qing-Yu.Influence of annealing temperature on the luminescence of Er/Yb co-doped Al2O3 films. Acta Physica Sinica, 2005, 54(9): 4433-4438.doi:10.7498/aps.54.4433 |
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Shao Jia-Ping, Hu Hui, Guo Wen-Ping, Wang Lai, Luo Yi, Sun Chang-Zheng, Hao Zhi-Biao.Study on electroluminescence spectra of InxGa1－xN/GaN-MQWs materials with high indium contents. Acta Physica Sinica, 2005, 54(8): 3905-3909.doi:10.7498/aps.54.3905 |
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Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
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Zhao Qian, Wang Bo, Yan Hui, M.Kumeda, T.Shimizu.Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon. Acta Physica Sinica, 2004, 53(1): 151-155.doi:10.7498/aps.53.151 |
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Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian.. Acta Physica Sinica, 2002, 51(3): 659-662.doi:10.7498/aps.51.659 |
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MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
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ZHU WEN-ZHANG, SHEN QI-HUA.PHOTOVOLTAGE SPECTROSCOPY STUDY OF GaAs/AIGaAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1996, 45(2): 258-264.doi:10.7498/aps.45.258 |
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CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING.PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306.doi:10.7498/aps.45.304 |
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CHENG WEN-QING, CAI LI-HONG, CHEN HONG, ZHOU JUN-MING, XIE XIAO-GANG, MEI XIAO-BING, HUANG YI, ZHAO TIE-NAN, ZHU GE.. Acta Physica Sinica, 1995, 44(1): 142-144.doi:10.7498/aps.44.142 |
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CHENG WEN-QIN, LIU SHUANG, ZHOU JUN-MING, LIU YU-LONG, ZHU KE.PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 1993, 42(9): 1529-1531.doi:10.7498/aps.42.1529 |
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CHI JIAN-GANG, ZHAO WEN-QIN, LI AI-ZHEN.PHOTOREFLECTANCE SPECTROSCOPY OF MBE GaAs1-x Sbx/GaAs STRAINED LAYER QUANTUM WELL. Acta Physica Sinica, 1989, 38(10): 1710-1716.doi:10.7498/aps.38.1710 |
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WANG LI-JUN, HOU HONG-QI, ZHOU JUN-MING, TANG RU-MING, LU ZHI-DONG, WANG YAN-YUN, HUANG YI.PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE. Acta Physica Sinica, 1989, 38(7): 1086-1092.doi:10.7498/aps.38.1086 |
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JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN.PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915.doi:10.7498/aps.37.906 |
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HUANG YI, ZHOU JUN-MING, JIA WEI-YI, CHENG WEN-QIN, WANG YAN-YUN.LOW TEMPERATURE PHOTOLUMENESCENCE OF THE MODULATION DOPED HETEROSTRUCTURE GROWN BY MBE. Acta Physica Sinica, 1987, 36(2): 165-171.doi:10.7498/aps.36.165 |
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