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Ma Li-Ya, Li Yu-Dong, Guo Qi, Ai Er-Ken, Wang Hai-Jiao, Zeng Jun-Zhe.Photoluminescence spectra of 1 MeV electron beam irradiated In0.53Ga0.47As/InP quantum well and bulk materials. Acta Physica Sinica, 2015, 64(15): 154217.doi:10.7498/aps.64.154217 |
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Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou.Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica, 2014, 63(23): 237103.doi:10.7498/aps.63.237103 |
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Su An, Gao Ying-Jun.Light propagation characteristics of one-dimensional photonic crystal with double-barrier quantum well. Acta Physica Sinica, 2012, 61(23): 234208.doi:10.7498/aps.61.234208 |
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Wang Hua, Xu Bing-She, Meng Wei-Xin, Hao Yu-Ying, Liu Xu-Guang, Xu Hui-Xia.Properties of white organic electroluminescent devices based on a new organic metal complex with quantum well structure. Acta Physica Sinica, 2011, 60(9): 098102.doi:10.7498/aps.60.098102 |
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Zang Hang, Wang Zhi-Guang, Pang Li-Long, Wei Kong-Fang, Yao Cun-Feng, Shen Tie-Long, Sun Jian-Rong, Ma Yi-Zhun, Gou Jie, Sheng Yan-Bin, Zhu Ya-Bin.Raman investigation of ion-implanted ZnO films. Acta Physica Sinica, 2010, 59(7): 4831-4836.doi:10.7498/aps.59.4831 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao.Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113.doi:10.7498/aps.58.7108 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Zhang Li-Qing.Synthesis of metallic nanoparticles in spinel via defects induced by the inert-gas-ion implantation. Acta Physica Sinica, 2009, 58(1): 399-403.doi:10.7498/aps.58.399 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng.A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169.doi:10.7498/aps.57.5165 |
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Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin.Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica, 2008, 57(4): 2562-2566.doi:10.7498/aps.57.2562 |
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Hu Liang-Jun, Chen Yong-Hai, Ye Xiao-Ling, Wang Zhan-Guo.Electrical and optical properties of InAs/GaAs quantum dots doped by high energy Mn implantation. Acta Physica Sinica, 2007, 56(8): 4930-4935.doi:10.7498/aps.56.4930 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
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Zhong Hong-Mei, Chen Xiao-Shuang, Wang Jin-Bin, Xia Chang-Sheng, Wang Shao-Wei, Li Zhi-Feng, Xu Wen-Lan, Lu Wei.Preparation of ZnMnO by ion implantation and its spectral characterization. Acta Physica Sinica, 2006, 55(4): 2073-2077.doi:10.7498/aps.55.2073 |
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Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1－xSbx/InyGa1－yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
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Tang Nai-Yun, Ji Ya-Lin, Chen Xiao-Shuang, Lu Wei.Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots. Acta Physica Sinica, 2005, 54(6): 2904-2909.doi:10.7498/aps.54.2904 |
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Zhang Ji-Cai, Dai Lun, Qin Guo-Gang, Ying Li-Zhen, Zhao Xin-Sheng.. Acta Physica Sinica, 2002, 51(3): 629-634.doi:10.7498/aps.51.629 |
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WEI JIAN-HUA, XIE SHI-JIE, MEI LIANG-MO.SUPERLATTICE AND MULTI-QUANTUM-WELL PROPERTIES OF MX COMPOUNDS. Acta Physica Sinica, 2000, 49(11): 2254-2260.doi:10.7498/aps.49.2254 |
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TU XIAN-HUA, LI DAO-HUO.BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385.doi:10.7498/aps.49.1383 |
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