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Zhao Hua-Liang, Peng Hong-Ling, Zhou Xu-Yan, Zhang Jian-Xin, Niu Bo-Wen, Shang Xiao, Wang Tian-Cai, Cao Peng.Structural design of dual carrier multiplication avalanche photodiodes on InP substrate. Acta Physica Sinica, 2023, 72(19): 198502.doi:10.7498/aps.72.20230885 |
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Chen Yong-Qiang, Xu Guang-Yuan, Wang Jun, Fang Yu, Wu Xing-Zhi, Ding Ya-Qiong, Sun Yong.Electromagnetic diode based on asymmetric microwave photonic crystal. Acta Physica Sinica, 2022, 71(3): 034701.doi:10.7498/aps.71.20211291 |
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.Electromagnetic Diode Based on Asymmetric Microwave Photonic Crystal. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211291 |
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Wang Ao-Shuang, Xiao Qing-Quan, Chen Hao, He An-Na, Qin Ming-Zhe, Xie Quan.Design and simulation of Mg2Si/Si avalanche photodiode. Acta Physica Sinica, 2021, 70(10): 108501.doi:10.7498/aps.70.20201923 |
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Han Dong, Sun Fei-Yang, Lu Ji-Yuan, Song Fu-Ming, Xu Yue.Reducing dark count of single-photon avalanche diode detector with polysilicon field plate. Acta Physica Sinica, 2020, 69(14): 148501.doi:10.7498/aps.69.20200523 |
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Zhang Hai-Yan, Wang Lin-Li, Wu Chen-Yi, Wang Yu-Rong, Yang Lei, Pan Hai-Feng, Liu Qiao-Li, Guo Xia, Tang Kai, Zhang Zhong-Ping, Wu Guang.Avalanche photodiode single-photon detector with high time stability. Acta Physica Sinica, 2020, 69(7): 074204.doi:10.7498/aps.69.20191875 |
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Ji Zeng-Chao, Chen Shi-Xiu, Gao Shen, Chen Jun, Tian Wei.Analysis on mechanism of radiating microwave from vacuum diode. Acta Physica Sinica, 2016, 65(14): 145202.doi:10.7498/aps.65.145202 |
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Mao Ye-Fei, Zhang Heng-Li, Xu Liu, Deng Bo, Sang Si-Han, He Jing-Liang, Xing Ji-Chuan, Xin Jian-Guo, Jiang Yi.Laser diode double-end-direct-pumped slab laser with hybrid resonator. Acta Physica Sinica, 2015, 64(1): 014203.doi:10.7498/aps.64.014203 |
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Xue Ming-Xi, Chen Zhi-Bin, Wang Wei-Ming, Ouyang Hui-Quan, Liu Xian-Hong, Song Yan, Zhang Chao, Xiao Wen-Jian, Hou Zhang-Ya.Research on spectral peaks thermal-drifting in multi-wavelength infrared laser diode. Acta Physica Sinica, 2014, 63(15): 154206.doi:10.7498/aps.63.154206 |
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Liu Bai-Quan, Lan Lin-Feng, Zou Jian-Hua, Peng Jun-Biao.A novel organic light-emitting diode by utilizing double hole injection layer. Acta Physica Sinica, 2013, 62(8): 087302.doi:10.7498/aps.62.087302 |
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
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Mo Qiu-Yan, Zhao Yan-Li.Frequency responses of communication avalanche photodiodes. Acta Physica Sinica, 2011, 60(7): 072902.doi:10.7498/aps.60.072902 |
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He Bing-Xiang, He Ji-Zhou.Thermoelectric refrigerator of a double-barrier InAs/InP nanowire heterostructure. Acta Physica Sinica, 2010, 59(6): 3846-3850.doi:10.7498/aps.59.3846 |
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Ge Ji, Jin Zhi, Su Yong-Bo, Cheng Wei, Liu Xin-Yu, Wu De-Xin.A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique. Acta Physica Sinica, 2009, 58(12): 8584-8590.doi:10.7498/aps.58.8584 |
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Zhang Xin-Lu, Wang Yue-Zhu, Li Li, Ju You-Lun.Optical bistability performance of laser-diode end-pumped Tm, Ho: YLF laser. Acta Physica Sinica, 2008, 57(3): 1699-1703.doi:10.7498/aps.57.1699 |
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Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
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Gu Xiao-Ling, Guo Xia, Liang Ting, Lin Qiao-Ming, Guo Jing, Wu Di, Xu Li-Hua, Shen Guang-Di.The electroluminescence spectra of dual wavelength GaN-based light emitting diodes. Acta Physica Sinica, 2007, 56(9): 5531-5535.doi:10.7498/aps.56.5531 |
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Liu Ming, Liu Hong, He Yu-Ｌiang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
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LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER. Acta Physica Sinica, 2001, 50(12): 2506-2510.doi:10.7498/aps.50.2506 |
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LIN HONG-YI.AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS. Acta Physica Sinica, 1978, 27(3): 291-302.doi:10.7498/aps.27.291 |
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