| [1] |
Li Chen-Hui, Zhang Chen, Cai Xue-Fen, Zhang Cai-Xin, Yuan Jia-Yi, Deng Hui-Xiong.A review of first-principles calculation methods for defects in semiconductors. Acta Physica Sinica, 2024, 73(6): 066105.doi:10.7498/aps.73.20231960 |
| [2] |
Huang Yu-Hao, Zhang Gui-Tao, Wang Ru-Qian, Chen Qian, Wang Jin-Lan.Electronic structure and stability of two-dimensional bimetallic ferromagnetic semiconductor CrMoI6. Acta Physica Sinica, 2021, 70(20): 207301.doi:10.7498/aps.70.20210949 |
| [3] |
Zhang Bai-Fu, Zhu Kang, Wu Heng, Hu Hai-Feng, Shen Zhe, Xu Ji.Numerical study of metallic semiconductor nanolasers with double-concave cavity structures. Acta Physica Sinica, 2019, 68(22): 224201.doi:10.7498/aps.68.20190972 |
| [4] |
Zhang Dong, Lou Wen-Kai, Chang Kai.Theoretical progress of polarized interfaces in semiconductors. Acta Physica Sinica, 2019, 68(16): 167101.doi:10.7498/aps.68.20191239 |
| [5] |
Yu Li-Hua, Xue An-Jun, Dong Song-Tao, Xu Jun-Hua.Hetero-structure coherent epitaxial growth in AlN/NbN nano-structured multilayers. Acta Physica Sinica, 2010, 59(6): 4150-4155.doi:10.7498/aps.59.4150 |
| [6] |
Hu Yue, Rao Hai-Bo, Li Jun-Fei.Numerical model of ITO /organic semiconductor/metal organic light emitting device. Acta Physica Sinica, 2008, 57(9): 5928-5932.doi:10.7498/aps.57.5928 |
| [7] |
Ma Jian-Hua, Sun Jing-Lan, Meng Xiang-Jian, Lin Tie, Shi Fu-Wen, Chu Jun-Hao.Dielectric and interface characteristics of SrTiO3 with a MIS structure. Acta Physica Sinica, 2005, 54(3): 1390-1395.doi:10.7498/aps.54.1390 |
| [8] |
Wei Lun, Mei Fang-Hua, Shao Nan, Dong Yun-Shan, Li Ge-Yang.The coherent growth and mechanical properties of non-isostructural TiN/TiB2 nanomultilayers. Acta Physica Sinica, 2005, 54(10): 4846-4851.doi:10.7498/aps.54.4846 |
| [9] |
ZHAO ZI-QIANG, WEI LUN-CUN, WANG HAO, ZHANG JIN-HONG, ZHONG YUN-CHENG, LU XI-TING.THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL-SEMICONDUCTOR FILM Cu∶CdS. Acta Physica Sinica, 1997, 46(5): 878-882.doi:10.7498/aps.46.878 |
| [10] |
SHAO JIAN-DA, FAN ZHENG-XIU, YIN GONG-JIE, YI KUI, YUAN LI-XIANG.FABRICATION AND CHARACTERIZATION OF SPUTTERED W/C MULTILAYER MIRROR FOR SOFT X-RAY. Acta Physica Sinica, 1994, 43(12): 2015-2022.doi:10.7498/aps.43.2015 |
| [11] |
XUE FANG-SHI.TRANSFERRED ELECTRON EFFECT BETWEEN DIFFERENT ENERGY VALLEYS IN SEMICONDUCTOR HETEROSTRUCTURE. Acta Physica Sinica, 1990, 39(6): 142-150.doi:10.7498/aps.39.142 |
| [12] |
HU WEI-MIN, MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅳ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN GaAs AND GaP. Acta Physica Sinica, 1987, 36(10): 1330-1335.doi:10.7498/aps.36.1330 |
| [13] |
ZHU DE-GUANG, WU DING-FEN.A METHOD TO DETERMINE THE SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR CONTACT——CIRCULAR RING STRUCTURE METHOD. Acta Physica Sinica, 1987, 36(6): 752-759.doi:10.7498/aps.36.752 |
| [14] |
MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL. Acta Physica Sinica, 1986, 35(6): 808-811.doi:10.7498/aps.35.808 |
| [15] |
REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN CUBIC SEMICONDUCTORS (Ⅲ)——WAVEFUNCTIONS OF THE DIVACANCY STATES IN SI. Acta Physica Sinica, 1986, 35(11): 1457-1464.doi:10.7498/aps.35.1457 |
| [16] |
REN SHANG-YUAN, MAO DE-QIANG, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (Ⅰ)——BASIC EQUATIONS. Acta Physica Sinica, 1985, 34(4): 455-463.doi:10.7498/aps.34.455 |
| [17] |
CHEN CUN-LI.SPECIFIC CONTACT RESISTANCE OF METAL-BULK SEMI-CONDUCTOR——FOUR-POINT CONFIGURATION MODEL. Acta Physica Sinica, 1984, 33(9): 1314-1320.doi:10.7498/aps.33.1314 |
| [18] |
XIONG SHI-JIE, CAI JIAN-HUA.ON THE ELECTRICAL CONDUCTION OF LUCS. Acta Physica Sinica, 1984, 33(3): 352-361.doi:10.7498/aps.33.352 |
| [19] |
YIN ZHEN, MA HONG-RU, XIE DENG-PING, CAI JIAN-HUA.THE ELECTRONIC STRUCTURE OF f.c.c./f.c.c.LUCS. Acta Physica Sinica, 1983, 32(11): 1474-1478.doi:10.7498/aps.32.1474 |
| [20] |
XIONG SHI-JIE, CAI JIAN-HUA.A TIGHT-BINDING CALCULATION OF ELECTRONIC STATES OF LAYERED ULTRA-THIN COHERENT STRUCTURES. Acta Physica Sinica, 1982, 31(4): 474-484.doi:10.7498/aps.31.474 |
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