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Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua.Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS2and GeS2. Acta Physica Sinica, 2024, 73(13): 137102.doi:10.7498/aps.73.20240530 |
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Huang Yu-Hao, Zhang Gui-Tao, Wang Ru-Qian, Chen Qian, Wang Jin-Lan.Electronic structure and stability of two-dimensional bimetallic ferromagnetic semiconductor CrMoI6. Acta Physica Sinica, 2021, 70(20): 207301.doi:10.7498/aps.70.20210949 |
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Zhang Bai-Fu, Zhu Kang, Wu Heng, Hu Hai-Feng, Shen Zhe, Xu Ji.Numerical study of metallic semiconductor nanolasers with double-concave cavity structures. Acta Physica Sinica, 2019, 68(22): 224201.doi:10.7498/aps.68.20190972 |
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Pei Jia-Nan, Jiang Da-Yong, Tian Chun-Guang, Guo Ze-Xuan, Liu Ru-Sheng, Sun Long, Qin Jie-Ming, Hou Jian-Hua, Zhao Jian-Xun, Liang Qing-Cheng, Gao Shang.Effect of Pt NPs in the film on the performances of ZnO-based metal-semiconductor-metal structured ultraviolet photodetector. Acta Physica Sinica, 2015, 64(6): 067802.doi:10.7498/aps.64.067802 |
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Wei Zheng-Hong, Yun Feng, Ding Wen, Huang Ya-Ping, Wang Hong, Li Qiang, Zhang Ye, Guo Mao-Feng, Liu Shuo, Wu Hong-Bin.Reflective Ni/Ag/Ti/Au electrode with low specific contact resistivity. Acta Physica Sinica, 2015, 64(12): 127304.doi:10.7498/aps.64.127304 |
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Shi Yan-Mei, Liu Ji-Zhi, Yao Su-Ying, Ding Yan-Hong.A low on-resistance silicon on insulator lateral double diffused metal oxide semiconductor device with a vertical drain field plate. Acta Physica Sinica, 2014, 63(10): 107302.doi:10.7498/aps.63.107302 |
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Yan Guang-Ming, Li Cheng, Tang Meng-Rao, Huang Shi-Hao, Wang Chen, Lu Wei-Fang, Huang Wei, Lai Hong-Kai, Chen Song-Yan.Properties and mechanism analysis of metal/Ge ohmic contact. Acta Physica Sinica, 2013, 62(16): 167304.doi:10.7498/aps.62.167304 |
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Lu Wen-Hui, Zhang Shuai.Effect of contact resistance on field emission from carbon nanotube. Acta Physica Sinica, 2012, 61(1): 018801.doi:10.7498/aps.61.018801 |
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Gang Jian-Lei, Li Song-Lin, Meng Yang, Liao Zhao-Liang, Liang Xue-Jin, Chen Dong-Min.Reproducible low-current resistive switching of metal/Pr0.7Ca0.3MnO3/Pt junctions with a point-contact top electrode. Acta Physica Sinica, 2009, 58(8): 5730-5735.doi:10.7498/aps.58.5730 |
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Hu Yue, Rao Hai-Bo, Li Jun-Fei.Numerical model of ITO /organic semiconductor/metal organic light emitting device. Acta Physica Sinica, 2008, 57(9): 5928-5932.doi:10.7498/aps.57.5928 |
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Ma Jian-Hua, Sun Jing-Lan, Meng Xiang-Jian, Lin Tie, Shi Fu-Wen, Chu Jun-Hao.Dielectric and interface characteristics of SrTiO3 with a MIS structure. Acta Physica Sinica, 2005, 54(3): 1390-1395.doi:10.7498/aps.54.1390 |
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Yan Hai-Qing, Tang Chen, Zhang Hao, Liu Ming, Zhang Gui-Min.The variable metric algorithm for ground state energy of ionized-donor-bound excitons in semiconductors. Acta Physica Sinica, 2004, 53(11): 3877-3881.doi:10.7498/aps.53.3877 |
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Zhang Zhi-Yong, Wang Tai-Hong.Multipeak negative-differential-resistance device by combining SET and MOSFET. Acta Physica Sinica, 2003, 52(7): 1766-1770.doi:10.7498/aps.52.1766 |
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WANG YIN-YUE, ZHEN CONG-MIAN, GONG HENG-XIANG, YAN ZHI-JUN, WANG YA-FAN, LIU XUE-QIN, YANG YING-HU, HE SHAN-HU.MEASUREMENT OF THE SPECIFIC CONTACT RESISTANCE OF Au/Ti/p-DIAMOND USING TRANSMIS SION LINE MODEL. Acta Physica Sinica, 2000, 49(7): 1348-1351.doi:10.7498/aps.49.1348 |
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ZHAO ZI-QIANG, WEI LUN-CUN, WANG HAO, ZHANG JIN-HONG, ZHONG YUN-CHENG, LU XI-TING.THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL-SEMICONDUCTOR FILM Cu∶CdS. Acta Physica Sinica, 1997, 46(5): 878-882.doi:10.7498/aps.46.878 |
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WU DING-FEN, WANG DE-NING.A MODEL OF OHMIC CONTACT OF GaAs AND OTHER SEMICONDUCTOR. Acta Physica Sinica, 1985, 34(3): 332-340.doi:10.7498/aps.34.332 |
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CHEN CUN-LI.SPECIFIC CONTACT RESISTANCE OF METAL-BULK SEMI-CONDUCTOR——FOUR-POINT CONFIGURATION MODEL. Acta Physica Sinica, 1984, 33(9): 1314-1320.doi:10.7498/aps.33.1314 |
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LIU MEI, CAI JIAN-HUA.THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS. Acta Physica Sinica, 1982, 31(8): 1030-1037.doi:10.7498/aps.31.1030 |
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HUNG GIAN.THE MEASUREMENT OF EXCESS CARRIERS LIFE-TIME IN SEMICONDUCTORS BY PHOTOCONDUCTIVE PHASESHIFT OF SPREADING RESISTANCE UNDER A POINT CONTACT. Acta Physica Sinica, 1966, 22(4): 385-403.doi:10.7498/aps.22.385 |
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.. Acta Physica Sinica, 1956, 12(3): 271-274.doi:10.7498/aps.12.271 |