[1] |
Zhang Shi-Hao, Xie Bo, Peng Ran, Liu Xiao-Qian, Lü Xin, Liu Jian-Peng.Novel electrical properties of moiré graphene systems. Acta Physica Sinica, 2023, 72(6): 067302.doi:10.7498/aps.72.20230120 |
[2] |
Yu Zhong, Dang Zhong, Ke Xi-Zheng, Cui Zhen.Optical and electronic properties of N/B doped graphene. Acta Physica Sinica, 2016, 65(24): 248103.doi:10.7498/aps.65.248103 |
[3] |
Li Ming-Jie, Gao Hong, Li Jiang-Lu, Wen Jing, Li Kai, Zhang Wei-Guang.Electrical properties of single ZnO nanobelt in low temperature. Acta Physica Sinica, 2013, 62(18): 187302.doi:10.7498/aps.62.187302 |
[4] |
Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao.Research of in-situ electrical property of micron dimension ZnO under high pressure. Acta Physica Sinica, 2010, 59(6): 4235-4239.doi:10.7498/aps.59.4235 |
[5] |
Chen Ge, Zhang Jia-Liang, Hao Wen-Tao, Tan Yong-Qiang, Zheng Peng, Shao Shou-Fu.Microstructures and electrical properties of (Na1/2Bi1/2)Cu3Ti4O12 ceramics. Acta Physica Sinica, 2010, 59(5): 3509-3515.doi:10.7498/aps.59.3509 |
[6] |
Song Chao, Chen Gu-Ran, Xu Jun, Wang Tao, Sun Hong-Cheng, Liu Yu, Li Wei, Chen Kun-Ji.Properties of electric transport in crystallized silicon films under different annealing temperatures. Acta Physica Sinica, 2009, 58(11): 7878-7883.doi:10.7498/aps.58.7878 |
[7] |
Shen Chen-Hai, Lu Jing-Xiao, Chen Yong-Sheng.High rate growth and electronic property of μc-Si:H. Acta Physica Sinica, 2009, 58(10): 7288-7293.doi:10.7498/aps.58.7288 |
[8] |
San Hai-Sheng, Chen Chong, He Yu-Yang, Wang Jun, Feng Bo-Xue.Study on electrical properties of n-type transparent and conductiveCdIn22O44 thin film and the optimum preparation parameters for large- area film. Acta Physica Sinica, 2005, 54(4): 1736-1741.doi:10.7498/aps.54.1736 |
[9] |
Liu Hong, Chen Jiang-Wei.The structure and electronic properties of carbon nanotube heterojunction. Acta Physica Sinica, 2003, 52(3): 664-667.doi:10.7498/aps.52.664 |
[10] |
CHEN GUANG-HUA, YAO JIANG-HONG, WANG YONG-QIAN, ZOU YUN-JUAN.ELECTRICAL PROPERTIES OF SULFUR-DOPED C60 FILMS. Acta Physica Sinica, 1997, 46(6): 1183-1187.doi:10.7498/aps.46.1183 |
[11] |
CHEN XI-YING, DING XUN-MIN, ZHANG SHENG-KUN, ZHANG BO, LU FANG, CAO XIAN-AN, ZHU WEI, HOU XIAO-YUAN.STUDIES OF ELECTRONIC PROPERTIES OF GaS/GaAs INTERFACE. Acta Physica Sinica, 1997, 46(3): 612-617.doi:10.7498/aps.46.612 |
[12] |
NAN CE-WEN, WANG LE.ELECTRICAL PROPERTIES OF CRYSTALLINE-NONCRYSTAL-LINE COMPOSITE Li IONIC CONDUCTOR. Acta Physica Sinica, 1988, 37(5): 782-788.doi:10.7498/aps.37.782 |
[13] |
RUAN YAO-ZHONG, LI LI-PING, CHEN YOU-JUN, HE PING-SHENG.DIELECTRIC PROPERTIES OF POLYBIS-(p-TOLUENE SULFONATE)-2,4-HEXADIYNE-l,6-DIAL (PTS) SINGLE CRYSTAL. Acta Physica Sinica, 1987, 36(11): 1503-1508.doi:10.7498/aps.36.1503 |
[14] |
WANG HONG, XU BIN, LIU XI-LING, HAN JIAN-RU, SHAN SHU-XIA.PIEZOELECTRIC PROPERTIES AND ELASTIC PROPERTIES OF SINGLE CRYSTAL BERLINITE (α-AlPO4). Acta Physica Sinica, 1985, 34(12): 1634-1640.doi:10.7498/aps.34.1634 |
[15] |
HU BO-QING, LI YONG-JING, ZHOU TANG, ZHANG DAO-FAN.CRYSTAL GROWTH AND OPTICAL AND ELECTRIC CHARACTERISTICS OF 2KIO3·HCI SINGLE CRYSTAL. Acta Physica Sinica, 1984, 33(12): 1707-1712.doi:10.7498/aps.33.1707 |
[16] |
YAN QI-WEI.THE CRYSTAL STRUCTURE ANALYSIS OF KLiSO4 WITH NEUTRON DEFFRACTION AT ROOM TEMPERATURE. Acta Physica Sinica, 1984, 33(3): 425-427.doi:10.7498/aps.33.425 |
[17] |
GU YUAN-XIN.DETERMINING THE POSITION OF LITHIUM ATOM IN LITHIUM POTASSIUM SULPHATE (C66). Acta Physica Sinica, 1983, 32(9): 1196-1199.doi:10.7498/aps.32.1196 |
[18] |
CHOW JYE, WANG ZHEN-GUO, LOU ZHE-GONG, WANG WAN-LIAN, YUO SHIN-KAI.LOW TEMPERATURE ELECTRICAL PROPERTIES OF SILICON MATERIAL. Acta Physica Sinica, 1966, 22(4): 404-411.doi:10.7498/aps.22.404 |
[19] |
.高压对InSb、InAs电学性质的影响. Acta Physica Sinica, 1961, 17(4): 198-204.doi:10.7498/aps.17.198 |
[20] |
.ВЛИЯНИЕ СЕРЕБРА НА ЭЛЕКТРИЧЕСКИЕ СВОЙСТВА ЗАКИСИ МЕДИ. Acta Physica Sinica, 1958, 14(5): 423-427.doi:10.7498/aps.14.423 |