| [1] |
Liu Jun-Ling, Bai Yu-Jie, Xu Ning, Zhang Qin-Fang.First-principles study on electronic structure of GaS/Mg(OH)2heterostructure. Acta Physica Sinica, 2024, 73(13): 137103.doi:10.7498/aps.73.20231979 |
| [2] |
Li Ming-Jie, Gao Hong, Li Jiang-Lu, Wen Jing, Li Kai, Zhang Wei-Guang.Electrical properties of single ZnO nanobelt in low temperature. Acta Physica Sinica, 2013, 62(18): 187302.doi:10.7498/aps.62.187302 |
| [3] |
Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao.Research of in-situ electrical property of micron dimension ZnO under high pressure. Acta Physica Sinica, 2010, 59(6): 4235-4239.doi:10.7498/aps.59.4235 |
| [4] |
Shen Chen-Hai, Lu Jing-Xiao, Chen Yong-Sheng.High rate growth and electronic property of μc-Si:H. Acta Physica Sinica, 2009, 58(10): 7288-7293.doi:10.7498/aps.58.7288 |
| [5] |
Lao Yan-Feng, Wu Hui-Zhen.Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures. Acta Physica Sinica, 2005, 54(9): 4334-4339.doi:10.7498/aps.54.4334 |
| [6] |
Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
| [7] |
Cao Qi, Li Xiang-Yin.Temperature influence on optical and electric properties of nano ZnO film. Acta Physica Sinica, 2004, 53(5): 1572-1576.doi:10.7498/aps.53.1572 |
| [8] |
Zhao Ji-Gang, Shao Bin, Wang Tai-Hong.. Acta Physica Sinica, 2002, 51(6): 1355-1359.doi:10.7498/aps.51.1355 |
| [9] |
Zhang Fa－pei, Guo Hong－zhi, Xu Peng－shou, Zhu Chuan－gang, Lu Er－dong, Zhang Xin－yi, Liang Ren－you.Interface Formation Between Co With S－Passivated GaAs(100) . Acta Physica Sinica, 2000, 49(1): 142-145.doi:10.7498/aps.49.142 |
| [10] |
ZHANG FA-PEI, XU PENG-SHOU, XU FA-QIANG, LU ER-DONG, SUN YU-MING, ZHANG XIN-YI, ZHU JING-SHENG, LIANG REN-YOU.STUDIES OF INTERFACE FORMATION OF Co/GaAs(100) AND THE MAGNETIC PROPERTY OF ULTRATHIN Co FILMS. Acta Physica Sinica, 1998, 47(4): 692-698.doi:10.7498/aps.47.692 |
| [11] |
CHEN GUANG-HUA, YAO JIANG-HONG, WANG YONG-QIAN, ZOU YUN-JUAN.ELECTRICAL PROPERTIES OF SULFUR-DOPED C60 FILMS. Acta Physica Sinica, 1997, 46(6): 1183-1187.doi:10.7498/aps.46.1183 |
| [12] |
CHEN XI-YING, CAO XIAN-AN, DING XUN-MIN, HOU XIAO-YUAN, CHEN LIANG-YAO, ZHAO GUO-QING.PROPERTIES OF GaS GROWN BY MICROWAVE-GLOW DISCHARGE. Acta Physica Sinica, 1997, 46(4): 826-832.doi:10.7498/aps.46.826 |
| [13] |
CHEN YAN, DONG GUO-SHENG, ZHANG MING, Jin Xiao-Feng, LU ER-DONG, PAN HAI-BING, XU PENG-SHOU, ZHANG XIN-YI, FAN CHAO-YANG.. Acta Physica Sinica, 1995, 44(1): 145-151.doi:10.7498/aps.44.145 |
| [14] |
ZHANG MING, DONG GUO-SHENG, LI ZHE-SHEN, XU MIN, JIN XIAO-FENG, WANG XUN, ZHU XING-GUO.FORMATION AND CHEMICAL REACTION OF THE Mn/GaAs(100) INTERFACE. Acta Physica Sinica, 1993, 42(8): 1333-1339.doi:10.7498/aps.42.1333 |
| [15] |
LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN.PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696.doi:10.7498/aps.41.689 |
| [16] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
| [17] |
LU XUE-KUN.THE Al-GaAs(100)(4×1) INTERFACIAL REACTION STUDIED BY HREELS, XPS AND LEED. Acta Physica Sinica, 1988, 37(11): 1882-1887.doi:10.7498/aps.37.1882 |
| [18] |
DING XUN-MIN, DONG GUO-SHENG, YANG SHU, CHEN PING, WANG XUN.AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS. Acta Physica Sinica, 1985, 34(5): 634-639.doi:10.7498/aps.34.634 |
| [19] |
DAI DAO-XUAN, TANG HOU-SHUN, NI YU-HONG, YU XI-TONG.AN INVESTIGATION OF Al/GaAs INTERFACE REACTION BY XPS. Acta Physica Sinica, 1983, 32(10): 1328-1332.doi:10.7498/aps.32.1328 |
| [20] |
CHOW JYE, WANG ZHEN-GUO, LOU ZHE-GONG, WANG WAN-LIAN, YUO SHIN-KAI.LOW TEMPERATURE ELECTRICAL PROPERTIES OF SILICON MATERIAL. Acta Physica Sinica, 1966, 22(4): 404-411.doi:10.7498/aps.22.404 |
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