| [1] |
Jiang Zhao, Chen Xue-Kang.Study on controlling the stress in flexible Al/PI film by interface alloying. Acta Physica Sinica, 2015, 64(21): 216802.doi:10.7498/aps.64.216802 |
| [2] |
Pan Xiao, Ju Huan-Xin, Feng Xue-Fei, Fan Qi-Tang, Wang Chia-Hsin, Yang Yaw-Wen, Zhu Jun-Fa.Surface morphology of F8BT films and interface structures and reactions of Al on F8BT films. Acta Physica Sinica, 2015, 64(7): 077304.doi:10.7498/aps.64.077304 |
| [3] |
Tang Cui-Ming, Zhao Feng, Chen Xiao-Xu, Chen Hua-Jun, Cheng Xin-Lu.Thermite reaction of Al and α-Fe2O3 at the nanometer interface：ab initio molecular dynamics study. Acta Physica Sinica, 2013, 62(24): 247101.doi:10.7498/aps.62.247101 |
| [4] |
Lao Yan-Feng, Wu Hui-Zhen.Study on infrared absorption of interfaces in direct wafer bonded InP-GaAs structures. Acta Physica Sinica, 2005, 54(9): 4334-4339.doi:10.7498/aps.54.4334 |
| [5] |
Wang Chong, Chen Ping-Ping, Zhou Xu-Chang, Xia Chang-Sheng, Wang Shao-Wei, Chen Xiao-Shuang, Lu Wei.Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well. Acta Physica Sinica, 2005, 54(7): 3337-3341.doi:10.7498/aps.54.3337 |
| [6] |
Jiang Mei-Fu, Ning Zhao-Yuan.XPS study of fluorinated diamond-like carbon films prepared by reactive magnetron sputtering. Acta Physica Sinica, 2004, 53(9): 3220-3224.doi:10.7498/aps.53.3220 |
| [7] |
Yuan Xian-Zhang, Miao Zhong-Lin.In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well. Acta Physica Sinica, 2004, 53(10): 3521-3524.doi:10.7498/aps.53.3521 |
| [8] |
MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
| [9] |
Zhang Fa－pei, Guo Hong－zhi, Xu Peng－shou, Zhu Chuan－gang, Lu Er－dong, Zhang Xin－yi, Liang Ren－you.Interface Formation Between Co With S－Passivated GaAs(100) . Acta Physica Sinica, 2000, 49(1): 142-145.doi:10.7498/aps.49.142 |
| [10] |
DU XIN-HUA, LIU ZHEN-XIANG, XIE KAN, WANG YAN-BIN, CHU WU-YANG.XPS STUDIES OF CeO2/Nb2O5 INTERFACE EFFECT ON THE IMPROVEMENT OF THE OXYGEN SENSITIVITY OF CeO2 LAYER. Acta Physica Sinica, 1998, 47(12): 2025-2030.doi:10.7498/aps.47.2025 |
| [11] |
LIN XIU-HUA.XPS INVESTIGATION OF INTERFACE CHARACTERISTICS IN Au/GaP CONTACT SYSTEM. Acta Physica Sinica, 1998, 47(12): 2018-2024.doi:10.7498/aps.47.2018 |
| [12] |
CHEN XI-YING, DING XUN-MIN, ZHANG SHENG-KUN, ZHANG BO, LU FANG, CAO XIAN-AN, ZHU WEI, HOU XIAO-YUAN.STUDIES OF ELECTRONIC PROPERTIES OF GaS/GaAs INTERFACE. Acta Physica Sinica, 1997, 46(3): 612-617.doi:10.7498/aps.46.612 |
| [13] |
XU MIN, ZHU XING-GUO, ZHANG MING, DONG GUO-SHENG, JIN XIAO-FENG.AN XPS STUDY OF Mn THIN FILMS GROWN ON GaAs(001l) SURFACE. Acta Physica Sinica, 1996, 45(7): 1178-1184.doi:10.7498/aps.45.1178 |
| [14] |
ZHANG MING, DONG GUO-SHENG, XU MIN, CHEN YAN, Jin Xiao-Feng, ZHU XING-GUO.. Acta Physica Sinica, 1995, 44(1): 115-121.doi:10.7498/aps.44.115 |
| [15] |
ZHANG MING, DONG GUO-SHENG, LI ZHE-SHEN, XU MIN, JIN XIAO-FENG, WANG XUN, ZHU XING-GUO.FORMATION AND CHEMICAL REACTION OF THE Mn/GaAs(100) INTERFACE. Acta Physica Sinica, 1993, 42(8): 1333-1339.doi:10.7498/aps.42.1333 |
| [16] |
LU XUE-KUN, HOU XIAO-YUAN, DONG GUO-SHENG, DING XUN-MIN.PHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES. Acta Physica Sinica, 1992, 41(4): 689-696.doi:10.7498/aps.41.689 |
| [17] |
LU XUE-KUN.THE Al-GaAs(100)(4×1) INTERFACIAL REACTION STUDIED BY HREELS, XPS AND LEED. Acta Physica Sinica, 1988, 37(11): 1882-1887.doi:10.7498/aps.37.1882 |
| [18] |
DING XUN-MIN, DONG GUO-SHENG, YANG SHU, CHEN PING, WANG XUN.AN ELECTRON SPECTROSCOPY STUDY OF THE In/GaAs (111) INTERFACE FORMATION PROCESS. Acta Physica Sinica, 1985, 34(5): 634-639.doi:10.7498/aps.34.634 |
| [19] |
CHEN ZHENG-HAO, CUI DA-FU, Lü HUI-BIN, ZHOU YUE-LIANG.THE GENERATION AND THE CHARACTERISTICS OF INFRARED SURFACE SECOND HARMONIC AT THE GaAs-Al INTERFACE. Acta Physica Sinica, 1984, 33(3): 428-433.doi:10.7498/aps.33.428 |
| [20] |
LIN RONG-FU, DAI DAO-XUAN, JIANG SHAO-YOU, ZHANG YONG-FU, BAO WEI-GUO, LU GUO-LIANG.THE STUDY OF THE TRANSITION REGION AT THE INTERFACE OF Si-SiO2 BY XPS. Acta Physica Sinica, 1981, 30(10): 1295-1306.doi:10.7498/aps.30.1295 |
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