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Wang Mang-Mang, Ning Hua, Tao Xiang-Ming, Tan Ming-Qiu.Density-functional theory investigation of atomic geometryand oxygen adsorption of Au(110) surface. Acta Physica Sinica, 2011, 60(4): 047301.doi:10.7498/aps.60.047301 |
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Ye Xian, Huang Hui, Ren Xiao-Min, Guo Jing-Wei, Huang Yong-Qing, Wang Qi, Zhang Xia.Growths of InAs/GaAs and InAs/In x Ga1-x As/GaAs nanowire heterostructures. Acta Physica Sinica, 2011, 60(3): 036103.doi:10.7498/aps.60.036103 |
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Li Bo, Bao Shi-Ning, Cao Pei-Lin.Adsorption geometry of C2H4 and C2H on Ni(110) surface. Acta Physica Sinica, 2005, 54(12): 5784-5790.doi:10.7498/aps.54.5784 |
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Mao Hong-Ying, Huang Han, Yan Xin-Cheng, Chen Qiao, Qian Hui-Qin, Zhang Jian-Hua, Li Hai-Yang, He Pi-Mo, Bao Shi-Ning.The structure and electronic state of the ordered thin film of perylene and tetracene on Ag(110) surface. Acta Physica Sinica, 2005, 54(1): 460-466.doi:10.7498/aps.54.460 |
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Jia Yu, Yang Shi-E, Ma Bing-Xian, Li Xin-Jian, Hu Xing.Electronic structure of the stable GaAs(2 5 1 1) surface. Acta Physica Sinica, 2004, 53(10): 3515-3520.doi:10.7498/aps.53.3515 |
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Chen Dun-Jun, Shen Bo, Zhang Kai-Xiao, Deng Yong-Zhen, Fan Jie, Zhang Rong, Shi Yi, Zheng You-Dou.Structural properties of GaN1-xPx films. Acta Physica Sinica, 2003, 52(7): 1788-1791.doi:10.7498/aps.52.1788 |
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JING CHAO, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG.STRUCTURES AND MAGNETIC PROPERTIES OF THE FexMn1-x ALLOYS EPITAXIALLY GROWN ON GaAs(001) Surface. Acta Physica Sinica, 1999, 48(2): 289-295.doi:10.7498/aps.48.289 |
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MA BING-XIAN, JIA YU, FAN XI-QING.INFLUENCE OF RELAXATION ON THE SURFACE ELECTRONIC STATES OF ZnTe(110). Acta Physica Sinica, 1998, 47(6): 970-977.doi:10.7498/aps.47.970 |
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JIA YU, FAN XI-QING, MA BING-XIAN.CALCULATION OF ELECTRONIC STATES OF THE CdTe(110) RELAXED SURFACE. Acta Physica Sinica, 1997, 46(10): 1999-2006.doi:10.7498/aps.46.1999 |
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ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI.THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica, 1991, 40(8): 1329-1338.doi:10.7498/aps.40.1329 |
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LAN TIAN, XU FEI-YUE.A STUDY OF GaAs(110) SURFACE RELAXATION WITH LOW-ENERGY-ELECTRON-DIFFRACTION. Acta Physica Sinica, 1989, 38(3): 357-365.doi:10.7498/aps.38.357 |
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MEI LIANG-MO, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.THEORETICAL STUDY OF THE ELECTRONIC STRUCTURES OF Si(111) SURFACE. Acta Physica Sinica, 1989, 38(10): 1578-1584.doi:10.7498/aps.38.1578 |
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ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG.PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N. Acta Physica Sinica, 1988, 37(12): 1925-1931.doi:10.7498/aps.37.1925 |
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GU YI-MING, HUANG MING-ZHU, WANG KE LING.ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM. Acta Physica Sinica, 1988, 37(1): 11-19.doi:10.7498/aps.37.11 |
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HU YONG-JUN, LIN ZHANG-DA, WANG CHANG-HENG, XIE KAN.THE INFLUENCE OF O2 ON THE ELECTRONIC STRUCTURE OF CLEAN AND ION SPUTTERED SURFACES OF 2H-MoS2(0001). Acta Physica Sinica, 1986, 35(1): 50-57.doi:10.7498/aps.35.50 |
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YU MIN-REN, WANG HONG-CHUAN, FANG ZHI-LIE, HOU XIAO-YUAN, WANG XUN.ELECTRON STIMULATED ADSORPTION STUDY OF OXYGEN ON InP CLEAN SURFACE. Acta Physica Sinica, 1984, 33(12): 1713-1718.doi:10.7498/aps.33.1713 |
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XU JUN-YING, CHEN LIANG-HUI, GONG JI-SHU, XU ZHONG-YING, ZHUANG WEI-HUA, LI YU-ZHANG, XU JI-ZONG, WU LING-XI.THE PHOTOLUMINESCENCE SPECTRA OF N+, Zn+ IMPLANTED GaAs1-xPx AT 1.8-4.2 K. Acta Physica Sinica, 1984, 33(6): 833-839.doi:10.7498/aps.33.833 |
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XU YA-BUO, DONG GUO-SHENG, DING XUN-MIN, YANG SHU, WANG XUN.THE UPS STUDY OF GaAs(1OO) SURFACE (4×1) STRUCTURE. Acta Physica Sinica, 1983, 32(10): 1339-1343.doi:10.7498/aps.32.1339 |
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ZHANG KAI-MING, YE LING.THE SURFACE STRUCTURE OF GaAs(110). Acta Physica Sinica, 1980, 29(6): 686-692.doi:10.7498/aps.29.686 |
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CHANG YU-WON, YU QI-HUA.THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As1-xPx]ALLOY). Acta Physica Sinica, 1965, 21(6): 1162-1169.doi:10.7498/aps.21.1162 |