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Wang Fang-Zhen, Chen Zhang-Hai, Bai Li-Hui, Huang Shao-Hua, Shen Xue-Chu.The micro-photoluminescence and micro-Raman study of Zn1－xCdx Se quantum islands (dots) in CdSe/ZnSe heterostructure. Acta Physica Sinica, 2006, 55(5): 2628-2632.doi:10.7498/aps.55.2628 |
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Lei JiaRong, Yuan Yong Gang, Zhao Lin, Zhao Min Zhi, Cui Gao Xian.Investigations of the photon fluences in various n+γ\=mixed fields in the fast neutron reactor. Acta Physica Sinica, 2003, 52(1): 53-57.doi:10.7498/aps.52.53 |
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MIU ZHONG-LIN, CHEN PING-PING, LU WEI, XU WEN-LAN, LI ZHI-FENG, CAI WEI-YING.. Acta Physica Sinica, 2001, 50(1): 111-115.doi:10.7498/aps.50.111 |
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WAN FA-RONG, CHU WU-YANG, SIAO JI-MEI, TAKAHASHI HEISHICHIRO.RADIATION-INDUCED SEGREGATION IN HYDROGEN-IMPLANTED Fe-1wt%Ni ALLOY. Acta Physica Sinica, 1999, 48(8): 1491-1495.doi:10.7498/aps.48.1491 |
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DING GUO-QING.INVESTIGATION OF TENSILE-STRAINED,LONG WAVELENGTH In1-xGaxAsyP1-y/InP WITH QUANTUM-WELL STRUCTURE BY PHTOLUMINESCENCE MEASUREMENTS. Acta Physica Sinica, 1998, 47(9): 1564-1570.doi:10.7498/aps.47.1564 |
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CHENG WEN-QIN, CAI LI-HONG, XIE XIAO-GANG, WANG WEN-XIN, HU QIANG, ZHOU JUN-MING.PHOTOLUMINESCENCE SPECTRA OF AlyGa1-yAs/AlxGa1-xAs QUANTUM WELL FOR LASERS. Acta Physica Sinica, 1996, 45(2): 304-306.doi:10.7498/aps.45.304 |
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CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI.DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs. Acta Physica Sinica, 1996, 45(3): 491-498.doi:10.7498/aps.45.491 |
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CHENG WEN-QING, CAI LI-HONG, CHEN HONG, ZHOU JUN-MING, XIE XIAO-GANG, MEI XIAO-BING, HUANG YI, ZHAO TIE-NAN, ZHU GE.. Acta Physica Sinica, 1995, 44(1): 142-144.doi:10.7498/aps.44.142 |
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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan.PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION. Acta Physica Sinica, 1994, 43(8): 1352-1359.doi:10.7498/aps.43.1352 |
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CHENG WEN-QIN, LIU SHUANG, ZHOU JUN-MING, LIU YU-LONG, ZHU KE.PHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES. Acta Physica Sinica, 1993, 42(9): 1529-1531.doi:10.7498/aps.42.1529 |
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QIU SU-JUAN, CHEN KAI-MAO, WU LAN-QING.DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE. Acta Physica Sinica, 1993, 42(8): 1304-1310.doi:10.7498/aps.42.1304 |
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ZHANG YONG, ZHENG JIAN-SHENG, WU BO-XI.THEORETICAL INVESTIGATION ON THE PRESSURE BEHA-VIOR OF NITROGEN BOUND EXCITONS IN GaP AND GaAs1-xPx. Acta Physica Sinica, 1991, 40(8): 1329-1338.doi:10.7498/aps.40.1329 |
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CHI JIAN-GANG, ZHAO WEN-QIN, LI AI-ZHEN.PHOTOREFLECTANCE SPECTROSCOPY OF MBE GaAs1-x Sbx/GaAs STRAINED LAYER QUANTUM WELL. Acta Physica Sinica, 1989, 38(10): 1710-1716.doi:10.7498/aps.38.1710 |
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JIA WEI-YI, LU ZHI-DONG, HUANG YI, ZHOU JUN-MING, LI YUNG-KANG, WANG YAN-YUN.PHOTOLUMINESCENCE DIAGNOSIS OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS. Acta Physica Sinica, 1988, 37(6): 906-915.doi:10.7498/aps.37.906 |
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GU YI-MING, HUANG MING-ZHU, WANG KE LING.ELECTRONIC STRUCTURES OF 3d-TRANSITION METAL IN GaAs1-xPx ALLOY SYSTEM. Acta Physica Sinica, 1988, 37(1): 11-19.doi:10.7498/aps.37.11 |
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ZHANG YONG, YU QI, ZHENG JIAN-SHENG, YAN BING-ZHANG, WU BO-XI, LI GUO-HUA, WANG ZHAO-PING, HAN HE-XIANG.PRESSURE BEHAVIOR OF BOUND EXCITONS IN GaAs1-xPx :N. Acta Physica Sinica, 1988, 37(12): 1925-1931.doi:10.7498/aps.37.1925 |
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DU DONG-SHENG, YANG XIN-E, LUO MA.JET CHARGE CROSS SECTION METHOD. Acta Physica Sinica, 1986, 35(2): 141-151.doi:10.7498/aps.35.141 |
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ZHAO XUE-SHU, LI GUO-HUA, HAN HE-XIANG, WANG ZHAO-PING, TANG RU-MING, HU JING-ZHU.A STUDY OF PHOTOLUMINESCENCE OF GaP(N,Te,Zn) UNDER HIGH PRESSURES. Acta Physica Sinica, 1984, 33(4): 583-587.doi:10.7498/aps.33.583 |
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XU YONG-NIAN, ZHANG KAI-MING.THE ATOMIC STRUCTURE AND ELECTRONIC STATES OF GaAs1-xPx (110). Acta Physica Sinica, 1983, 32(2): 247-250.doi:10.7498/aps.32.247 |
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TSAO CHANG-CHIE, WANG WAI-SHEN, HUANG HO-CHANG.A NOTE ON THE LOW ENERGY PION-NUCLEON (3.3) PARTIAL WAVE SCATTERING. Acta Physica Sinica, 1964, 20(12): 1210-1215.doi:10.7498/aps.20.1210 |
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