| [1] |
Zhao Ming-Liang, Chen Song, Sun Feng, Zhang Jing, Lin Yan, Zhang Wei-Ru, Wang Wei-Guo.Grain boundary character distributions in Si3N4ceramics. Acta Physica Sinica, 2021, 70(22): 226801.doi:10.7498/aps.70.20210233 |
| [2] |
Cheng Chao-Qun, Li Gang, Zhang Wen-Dong, Li Peng-Wei, Hu Jie, Sang Sheng-Bo, Deng Xiao.Electronic structures and optical properties of boron and phosphorus doped β-Si3N4. Acta Physica Sinica, 2015, 64(6): 067102.doi:10.7498/aps.64.067102 |
| [3] |
Wu Xiao-Yan, Kong Ming, Li Ge-Yang, Zhao Wen-Ji.Crystallization of Si3N4 on h-AlN and superhardness effect of AlN/Si3N4 nanomultilayers. Acta Physica Sinica, 2009, 58(4): 2654-2659.doi:10.7498/aps.58.2654 |
| [4] |
Yu Li-Hua, Dong Song-Tao, Dong Shi-Run, Xu Jun-Hua.Epitaxial growth and mechanical properties of AlN/Si3N4 nanostructured multilayers. Acta Physica Sinica, 2008, 57(8): 5151-5158.doi:10.7498/aps.57.5151 |
| [5] |
Ding Ying-Chun, Xiang An-Ping, Xu Ming, Zhu Wen-Jun.Electrical structures and optical properties of doped earth element (Y，La) in γ-Si3N4. Acta Physica Sinica, 2007, 56(10): 5996-6002.doi:10.7498/aps.56.5996 |
| [6] |
Ding Ying-Chun, Xu Ming, Pan Hong-Zhe, Shen Yi-Bin, Zhu Wen-Jun, He Hong-Liang.Electronic structure and physical properties of γ-Si3N4 under high pressure. Acta Physica Sinica, 2007, 56(1): 117-122.doi:10.7498/aps.56.117 |
| [7] |
Zhao Wen-Ji, Dong Yun-Shan, Yue Jian-Ling, Li Ge-Yang.Crystallization of Si3N4 and superhardness effect of ZrN/Si3N4 nano-multilayers. Acta Physica Sinica, 2007, 56(1): 459-464.doi:10.7498/aps.56.459 |
| [8] |
Pan Hong-Zhe, Xu Ming, Zhu Wen-Jun, Zhou Hai-Ping.First-principles study on the electrical structures and optical properties of β-Si3N4. Acta Physica Sinica, 2006, 55(7): 3585-3589.doi:10.7498/aps.55.3585 |
| [9] |
ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN.CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica, 2001, 50(2): 293-298.doi:10.7498/aps.50.293 |
| [10] |
WANG LEI, TANG JING-CHANG, WANG XUE-SEN.SCANNING TUNNELING MICROSCOPY STUDY OF Si GROWTH ON Si3N4/Si SURFACE. Acta Physica Sinica, 2001, 50(3): 517-522.doi:10.7498/aps.50.517 |
| [11] |
Zhai Guang-Jie, Yang Jian-Shu, Chen Xian-Bang, Wang Xue-Shen.. Acta Physica Sinica, 2000, 49(2): 215-219.doi:10.7498/aps.49.215 |
| [12] |
CHEN JUN-FANG, WU XIAN-QIU, WANG DE-QIU, DING ZHEN-FENG, REN ZHAO-XING.INVESTIGATION ON THE DEPOSITION PROCESS OF SILICON NITRIDE THIN FILM PREPARED BY ECR-PECVD. Acta Physica Sinica, 1999, 48(7): 1309-1314.doi:10.7498/aps.48.1309 |
| [13] |
DUAN YU-HUA, ZHANG KAI-MING, XIE XI-DE.BAND STRUCTURAL PROPERTIES OF β-C3N4, β-Si3N4 AND β-Ge3N4. Acta Physica Sinica, 1996, 45(3): 512-517.doi:10.7498/aps.45.512 |
| [14] |
LI BAI-LI, GUO YI.. Acta Physica Sinica, 1995, 44(1): 133-136.doi:10.7498/aps.44.133 |
| [15] |
WANG SHAN-ZHONG, LI DAO-HUO.A STUDY ON LASER-PREPARATION AND ENERGY- LEVEL STRUCTURE OF NANOMETER SIZED a-Si3N4 PARTICLES. Acta Physica Sinica, 1994, 43(4): 627-631.doi:10.7498/aps.43.627 |
| [16] |
ZUO DU-LUO, LI DAO-HUO.THEORETICAL STUDIES ABOUT ELECTRONIC STRUCTURES OF Si3N4 AND Si QUANTUM DOTS. Acta Physica Sinica, 1994, 43(3): 424-432.doi:10.7498/aps.43.424 |
| [17] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI.INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica, 1993, 42(8): 1324-1332.doi:10.7498/aps.42.1324 |
| [18] |
HUANG BING-ZHONG, YU YU-ZHEN, HONG GUO-GUANG.THE ROUGHNESS OF THE Si-SiO2 INTERFACE. Acta Physica Sinica, 1987, 36(7): 829-837.doi:10.7498/aps.36.829 |
| [19] |
WEN SHU-LIN, FENG JING-WEI.LATTICE DEFECTS IN α-Si3N4 STUDIED BY HREM. Acta Physica Sinica, 1985, 34(7): 951-955.doi:10.7498/aps.34.951 |
| [20] |
LI SI-YUAN, ZHANG TONG-JUN, WANG IU-ZHEN, LI SHOU-SONG, YIN ZHI-PING.ANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN. Acta Physica Sinica, 1985, 34(6): 715-724.doi:10.7498/aps.34.715 |
下载: