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Zhang Wei, Shi Zhen-Wu, Huo Da-Yun, Guo Xiao-Xiang, Peng Chang-Si.Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth. Acta Physica Sinica, 2016, 65(11): 117801.doi:10.7498/aps.65.117801 |
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Chen Hong, Lan Hui, Chen Zi-Qi, Liu Lu-Ning, Wu Tao, Zuo Du-Luo, Lu Pei-Xiang, Wang Xin-Bing.Experimental study on laser produced tin droplet plasma extreme ultraviolet light source. Acta Physica Sinica, 2015, 64(7): 075202.doi:10.7498/aps.64.075202 |
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Chen Li-Jing, Li Wei-Xue, Dai Jian-Feng, Wang Qing.First-prinicples study of Mn-N co-doped p-type ZnO. Acta Physica Sinica, 2014, 63(19): 196101.doi:10.7498/aps.63.196101 |
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Wei Zhi, Jin Guang-Yong, Peng Bo, Zhang Xi-He, Tan Yong.Supercontinuum generation in photonic crystal fiber and tapered single-mode fiber. Acta Physica Sinica, 2014, 63(19): 194205.doi:10.7498/aps.63.194205 |
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Zhu Min, Li Xiao-Hong, Li Guo-Qiang, Chang Li-Yang, Xie Chang-Xin, Qiu Rong, Li Jia-Wen, Huang Wen-Hao.Photoluminescence of monocrystalline silicon irradiated by femtosecond pulsed laser. Acta Physica Sinica, 2014, 63(5): 057801.doi:10.7498/aps.63.057801 |
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Meng Dai-Yi, Shen Lan-Xian, Li De-Cong, Shai Xu-Xia, Deng Shu-Kang.Structural and electrical transport properties of Mg-doped n-type Sn-based type Ⅷ single crystalline clathrate. Acta Physica Sinica, 2014, 63(17): 177401.doi:10.7498/aps.63.177401 |
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Li Wan-Jun, Fang Liang, Qin Guo-Ping, Ruan Hai-Bo, Kong Chun-Yang, Zheng Ji, Bian Ping, Xu Qing, Wu Fang.First-principles study of Ag-N dual-doped p-type ZnO. Acta Physica Sinica, 2013, 62(16): 167701.doi:10.7498/aps.62.167701 |
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Yang Tian-Yong, Kong Chun-Yang, Ruan Hai-Bo, Qin Guo-Ping, Li Wan-Jun, Liang Wei-Wei, Meng Xiang-Dan, Zhao Yong-Hong, Fang Liang, Cui Yu-Ting.Study on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films. Acta Physica Sinica, 2013, 62(3): 037703.doi:10.7498/aps.62.037703 |
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Meng Dai-Yi, Shen Lan-Xian, Shai Xu-Xia, Dong Guo-Jun, Deng Shu-Kang.Growth and thermoelectric properties of Ge doped n-type Sn-based type-Ⅷ single crystalline clathrate. Acta Physica Sinica, 2013, 62(24): 247401.doi:10.7498/aps.62.247401 |
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Yao Guang-Rui, Fan Guang-Han, Zheng Shu-Wen, Ma Jia-Hong, Chen Jun, Zhang Yong, Li Shu-Ti, Su Shi-Chen, Zhang Tao.First-principles study of p-type ZnO by Te-N codoping. Acta Physica Sinica, 2012, 61(17): 176105.doi:10.7498/aps.61.176105 |
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Ji Chuan, Xu Jin.Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica, 2012, 61(23): 236102.doi:10.7498/aps.61.236102 |
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Deng Bei, Sun Hui-Qing, Guo Zhi-You, Gao Xiao-Qi.Theoretical analysis on the improvement of p-type ZnO by B-N codoping. Acta Physica Sinica, 2010, 59(2): 1212-1218.doi:10.7498/aps.59.1212 |
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Duan Zi-Gang, Huang Xiao-Dong, Zhou Ning, Xu Guang-Hui, Chai Guang-Yue.Epitaxy structure of a 1.5 μm n-p-n InGaAsP-InP transistor laser. Acta Physica Sinica, 2010, 59(9): 6193-6199.doi:10.7498/aps.59.6193 |
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Xing Hai-Ying, Fan Guang-Han, Zhou Tian-Ming.Electronic and magnetic properties of p，n type dopant and Mn co-doped GaN. Acta Physica Sinica, 2009, 58(5): 3324-3330.doi:10.7498/aps.58.3324 |
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Zhao Hui-Fang, Cao Quan-Xi, Li Jian-Tao.First-principle study of N，Ga codoped p-type ZnO. Acta Physica Sinica, 2008, 57(9): 5828-5832.doi:10.7498/aps.57.5828 |
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Zhang Jun, Xie Er-Qing, Fu Yu-Jun, Li Hui, Shao Le-Xi.Preparation of p-type ZnO thin films by in situ oxidation of Zn3N2. Acta Physica Sinica, 2007, 56(8): 4914-4919.doi:10.7498/aps.56.4914 |
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Xu Han, Chang Wen-Wei, Zhuo Hong-Bin.Forward Raman scattering in the wake-field induced by short-pulse laser. Acta Physica Sinica, 2003, 52(1): 135-139.doi:10.7498/aps.52.135 |
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LIU KAI-FENG, CAI JING, SUN HENG-HUI, RUN YUN-ZHU, CAO YONG-MING.A STUDY ON THE PHYSICAL PROCESS OF INDIUM IMPLANTATION BY PULSE LASER AND THE DEFECT PROPERTIES IN n TYPE SILICON. Acta Physica Sinica, 1990, 39(7): 88-94.doi:10.7498/aps.39.88 |
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GAO YU-ZUN, S. OHNUKI, H. TAKAHASHI, Y. SATO, T. TAKEYAMA.THE EFFECT OF HYDROGEN IMPLANTATION ON ELECTRON IRRADIATED DEFECTS AND BLISTER FORMATION IN SILICON SINGLE CRYSTAL. Acta Physica Sinica, 1988, 37(1): 152-156.doi:10.7498/aps.37.152 |
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WU FENG-MEI, WANG CHUN, TANG JIE, GONG BANG-RUI.STUDY OF NEUTRON IRRADIATION-INDUCED DEFECTS IN n-TYPE VAPOR PHASE EPITAXY GaAs LAYERS. Acta Physica Sinica, 1988, 37(7): 1203-1208.doi:10.7498/aps.37.1203 |
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