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Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu.Vertical short-channel MoS2field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502.doi:10.7498/aps.71.20220738 |
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Zhang Meng, Yao Ruo-He, Liu Yu-Rong.A channel thermal noise model of nanoscaled metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(5): 057101.doi:10.7498/aps.69.20191512 |
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Zhang Meng, Yao Ruo-He, Liu Yu-Rong, Geng Kui-Wei.Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2020, 69(17): 177102.doi:10.7498/aps.69.20200497 |
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Chen Hang-Yu, Song Jian-Jun, Zhang Jie, Hu Hui-Yong, Zhang He-Ming.New experimental discovery of channel crystal plane and orientation selection for small-sized uniaxial strained Si PMOS. Acta Physica Sinica, 2018, 67(6): 068501.doi:10.7498/aps.67.20172138 |
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Ning Bing-Xu, Hu Zhi-Yuan, Zhang Zheng-Xuan, Bi Da-Wei, Huang Hui-Xiang, Dai Ruo-Fan, Zhang Yan-Wei, Zou Shi-Chang.Effects of total ionizing dose on narrow-channel SOI NMOSFETs. Acta Physica Sinica, 2013, 62(7): 076104.doi:10.7498/aps.62.076104 |
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Zhang Wen-Tao, Zhu Bao-Hua, Wang Jie-Jun, Xiong Xian-Ming, Huang Ya-Qin.Characteristics of neutral atom deposition under channel effect in a laser standing wave field. Acta Physica Sinica, 2013, 62(24): 243201.doi:10.7498/aps.62.243201 |
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Li Li, Liu Hong-Xia, Yang Zhao-Nian.Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica, 2012, 61(16): 166101.doi:10.7498/aps.61.166101 |
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Hu Zhi-Yuan, Liu Zhang-Li, Shao Hua, Zhang Zheng-Xuan, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang.The influence of channel length on total ionizing dose effect in deep submicron technologies. Acta Physica Sinica, 2012, 61(5): 050702.doi:10.7498/aps.61.050702 |
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Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303 |
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Chen Can, Tong Ya-Jun, Xie Hong-Lan, Xiao Ti-Qiao.Study of the focusing properties of Laue bent crystal by ray-tracing. Acta Physica Sinica, 2012, 61(10): 104102.doi:10.7498/aps.61.104102 |
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Peng Hai-Bo, Wang Tie-Shan, Han Yun-Cheng, Ding Da-Jie, Xu He, Cheng Rui, Zhao Yong-Tao, Wang Yu-Yu.Study of channeling effect by impact of highly charged ions on crystal surface of Si(110). Acta Physica Sinica, 2008, 57(4): 2161-2164.doi:10.7498/aps.57.2161 |
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Shao Ming-Zhu, Luo Shi-Yu.The sine-squared potential and the band structure for channelling effects. Acta Physica Sinica, 2007, 56(6): 3407-3410.doi:10.7498/aps.56.3407 |
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Li Yan-Ping, Xu Jing-Ping, Chen Wei-Bing, Xu Sheng-Guo, Ji Feng.2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects. Acta Physica Sinica, 2006, 55(7): 3670-3676.doi:10.7498/aps.55.3670 |
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Luo Shi-Yu, Tan Yong-Ming, Shao Ming-Zhu, Wei Luo-Xia, Deng Li-Hu.Motion damping in channelling effects and the chaotic behaviour of a system. Acta Physica Sinica, 2004, 53(4): 1157-1161.doi:10.7498/aps.53.1157 |
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SHAO MING-ZHU.DECHANNELING EFFECTS OF CHARGED PARTICLES IN BENT CRYSTALS WITH VARYING CURVATURE. Acta Physica Sinica, 1992, 41(11): 1825-1829.doi:10.7498/aps.41.1825 |
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WU CHUN-WU, YIN SHI-DUAN, ZHANG JING-PING, XIAO GUANG-MING, LIU JIA-RUI, ZHU PEI-RAN.ANOMALOUS ION CHANNELING EFFECTS IN InGaAs/GaAs STRAINED HETEROJUNCTIONS. Acta Physica Sinica, 1989, 38(1): 83-90.doi:10.7498/aps.38.83 |
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LUO SHI-YU, SHAO MING-ZHU, TANG JIAN-NING, LIU ZHENG-RONG.CHAOTIC BEHAVIOURS IN BEND CRYSTAL CHANNEL. Acta Physica Sinica, 1988, 37(8): 1394-1400.doi:10.7498/aps.37.1394 |
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LIU JIA-RUI, ZHANG QI-CHU.CHANNELING OF PROTON IN α-LiIO3 SINGLE CRYSTAL. Acta Physica Sinica, 1987, 36(1): 54-59.doi:10.7498/aps.36.54 |
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TANG JIA-YONG, GE QI-YUN, LU FU-QUAN, SUN CHANG-NIAN, WENG TAI-MENG, YANG JIAN-JUN, YE HUI, YANG FU-JIA.STUDY ON THE POLARIZATION MECHANISM OF THE BEAM-FOIL INTERACTION IONS BY USING THE CHANNELING EFFECT. Acta Physica Sinica, 1984, 33(12): 1740-1744.doi:10.7498/aps.33.1740 |
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Ke T. S., CHANG Z. S..FURTHER EXPERIMENTS ON THE DISLOCATION INTERNAL FRICTION PEAKS WITH ANOMALOUS AMPLITUDE EFFECTIN Al-0.5% Cu ALLOY AND THE DISLOCATION KINK ATMOSPHERE MODEL. Acta Physica Sinica, 1966, 22(1): 71-82.doi:10.7498/aps.22.71 |