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Zhuang Ying-Hao, Fu Yun, Cai Wei, Zhang Qing-Song, Wu Zhen, Guo Lin-Hui, Zhong Zhe-Qiang, Zhang Bin.Analysis of physical mechanism of beam crosstalk in semiconductor laser array spectral-beam-combined system. Acta Physica Sinica, 2023, 72(2): 024206.doi:10.7498/aps.72.20221783 |
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Zong Zhi-Cheng, Pan Dong-Kai, Deng Shi-Chen, Wan Xiao, Yang Li-Na, Ma Deng-Ke, Yang Nuo.Mixed mismatch model predicted interfacial thermal conductance of metal/semiconductor interface. Acta Physica Sinica, 2023, 72(3): 034401.doi:10.7498/aps.72.20221981 |
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Zhang Cun-Bo, Yan Tao, Yang Zhi-Qiang, Ren Wei-Tao, Zhu Zhan-Ping.heoretical model of influence of frequency on thermal breakdown in semiconductor device. Acta Physica Sinica, 2017, 66(1): 018501.doi:10.7498/aps.66.018501 |
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Li Rui.The mechanisms of electric-dipole spin resonance in quasi-one-dimensional semiconductor quantum dot. Acta Physica Sinica, 2015, 64(16): 167303.doi:10.7498/aps.64.167303 |
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Wang Chang-Hong, Lin Tao, Zeng Zhi-Huan.Analysis and simulation of semiconductor thermoelectric power generation process. Acta Physica Sinica, 2014, 63(19): 197201.doi:10.7498/aps.63.197201 |
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Zhang Xi-Ren, Gao Chun-Ming.Time domain theory of the electronic transport property of semiconductors measured by means of square-wave-modulated free carrier absorption technique. Acta Physica Sinica, 2014, 63(13): 137801.doi:10.7498/aps.63.137801 |
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Cao Lei, Liu Hong-Xia, Wang Guan-Yu.Study of modeling for hetero-materiel gate fully depleted SSDOI MOSFET. Acta Physica Sinica, 2012, 61(1): 017105.doi:10.7498/aps.61.017105 |
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Sun Peng, Du Lei, Chen Wen-Hao, He Liang, Zhang Xiao-Fang.A radiation degradation model of metal-oxide-semiconductor field effect transistor. Acta Physica Sinica, 2012, 61(10): 107803.doi:10.7498/aps.61.107803 |
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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu.A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica, 2012, 61(4): 047303.doi:10.7498/aps.61.047303 |
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Ren Da-Nan, Ren Ren, Xu Jin.An all-proton spin quantum gate in semiconductor spin magnetic resonance force system. Acta Physica Sinica, 2010, 59(11): 8155-8159.doi:10.7498/aps.59.8155 |
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