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Li Feng, Xiao Chuan-Yun, Kan Er-Jun, Lu Rui-Feng, Deng Kai-Ming.Density functional study on the different behaviors of Pd and Pt coating on graphene. Acta Physica Sinica, 2014, 63(17): 176802.doi:10.7498/aps.63.176802 |
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Li Wei-Cong, Zou Zhi-Qiang, Wang Dan, Shi Gao-Ming.STM study of growth of manganese silicide thin films on a Si(100)-21 surface. Acta Physica Sinica, 2012, 61(6): 066801.doi:10.7498/aps.61.066801 |
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Shi Gao-Ming, Zou Zhi-Qiang, Sun Li-Min, Li Wei-Cong, Liu Xiao-Yong.Scanning tunneling mircroscopy and X-ray photoelectron spectroscopy studies of MnSi film and MnSi1.7 nanowires grown on Si substrates. Acta Physica Sinica, 2012, 61(22): 227301.doi:10.7498/aps.61.227301 |
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Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
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Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
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Zhao Ming-Hai, Sun Jing-Jing, Wang Dan, Zou Zhi-Qiang, Liang Qi.STM studies of the epitaxial growth of C60 molecules on Si(111)-7×7 surface. Acta Physica Sinica, 2010, 59(1): 636-642.doi:10.7498/aps.59.636 |
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Tang Xin-Xin, Luo Wen-Yun, Wang Chao-Zhuang, He Xin-Fu, Zha Yuan-Zi, Fan Sheng, Huang Xiao-Long, Wang Chuan-Shan.Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs. Acta Physica Sinica, 2008, 57(2): 1266-1270.doi:10.7498/aps.57.1266 |
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He Meng, Liu Guo-Zhen, Qiu Jie, Xing Jie, Lü Hui-Bin.Epitaxial growth of high quality TiN thin film on Si by laser molecular beam epitaxy. Acta Physica Sinica, 2008, 57(2): 1236-1240.doi:10.7498/aps.57.1236 |
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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai.Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981.doi:10.7498/aps.55.2977 |
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Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo.Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468.doi:10.7498/aps.52.1465 |
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Yan Long, Zhang Yong-Ping, Peng Yi-Ping, Pang Shi-Jin, Gao Hong-Jun.. Acta Physica Sinica, 2002, 51(5): 1017-1021.doi:10.7498/aps.51.1017 |
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HU YING.SiC NANOWIRES GROWN ON SILICON(100) WAFER BY MPCVD METHOD. Acta Physica Sinica, 2001, 50(12): 2452-2455.doi:10.7498/aps.50.2452 |
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SHAO QING-YI, FANG RONG-CHUAN, LIAO YUAN, HAN SI-JIN.INFLUENCE OF COVERAGE ON NUCLEATION AND GROWTH OF THIN FILMS. Acta Physica Sinica, 1999, 48(8): 1509-1513.doi:10.7498/aps.48.1509 |
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LI MING, XU MING, LIU HUI-ZHOU.KINETICS OF ORDERING AND 2-DIMENSIONAL GROWTH OF Ag ON Si(111). Acta Physica Sinica, 1996, 45(8): 1380-1389.doi:10.7498/aps.45.1380 |
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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ZHOU GUO-LIANG, CHEN KE-MING, TIAN LIANG-GUANG.LOW TEMPERATURE GROWTH OF THIN Ge FILM ON Si SUBSTRATES BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1988, 37(10): 1607-1612.doi:10.7498/aps.37.1607 |
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CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG.STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica, 1987, 36(4): 524-528.doi:10.7498/aps.36.524 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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XU YONG-NIAN, ZHANG KAI-MING.THE GROUP Ⅶ ELEMENTS CHEMISORPTION ON Si(111) AND Ge (111) SURFACES. Acta Physica Sinica, 1984, 33(11): 1619-1623.doi:10.7498/aps.33.1619 |
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