| [1] |
Zhai Shi-Ming, Liao Huang-Sheng, Zhou Nai-Gen, Huang Hai-Bin, Zhou Lang.Atomic simulation of SiyHxstructure configuration in a-Si:H thin films. Acta Physica Sinica, 2020, 69(7): 076801.doi:10.7498/aps.69.20191275 |
| [2] |
Ma Xiao-Feng, Wang Yi-Zhe, Zhou Cheng-Yue.Structural and optical properties of a-Si ∶H/SiO2 multiple quantum wells. Acta Physica Sinica, 2011, 60(6): 068102.doi:10.7498/aps.60.068102 |
| [3] |
Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo.Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468.doi:10.7498/aps.52.1465 |
| [4] |
CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
| [5] |
WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
| [6] |
ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING.XPS AND AES STUDY FOR Au/a-Si:H INTERFACE. Acta Physica Sinica, 1991, 40(2): 275-280.doi:10.7498/aps.40.275 |
| [7] |
WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
| [8] |
ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
| [9] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
| [10] |
ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING.GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica, 1989, 38(1): 163-169.doi:10.7498/aps.38.163 |
| [11] |
CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
| [12] |
WU JI-AN.ELECTRONIC STATES OF SUBSTITUTIONAL AND INTERSTITIAL GROUP-IB IMPURITIES IN SILICON. Acta Physica Sinica, 1988, 37(7): 1124-1130.doi:10.7498/aps.37.1124 |
| [13] |
WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
| [14] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
| [15] |
GU YI-MING, REN SHANG-YUAN.D3d SYMMETRIC LOCAL SPECTRAL DENSITIES AND THE ELECTRONIC STRUCTURES OF SUBSTITUTIONAL PAIRS IN Si. Acta Physica Sinica, 1987, 36(6): 736-744.doi:10.7498/aps.36.736 |
| [16] |
WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
| [17] |
SU ZI-MIN, PENG SHAO-QI.DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica, 1986, 35(6): 731-740.doi:10.7498/aps.35.731 |
| [18] |
HE YU-LIANG, YAN YONG-HONG.THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica, 1984, 33(10): 1472-1474.doi:10.7498/aps.33.1472 |
| [19] |
CHEN GUANG-HUA, LIU HUI-CHUN.STATISTICAL THEORY OF DEFECTS AND INPURITIES IN AMORPHOUS SEMICONDUCTORS. Acta Physica Sinica, 1984, 33(1): 93-98.doi:10.7498/aps.33.93 |
| [20] |
YAN CHENG.THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H. Acta Physica Sinica, 1982, 31(12): 62-74.doi:10.7498/aps.31.62 |
下载: