| [1] |
Wan Ming-Jun, Li Chun-Fu, Wen Ping, Zhang Feng-Chun, Wang Yao, Liu En-Zuo.The bond characters and phase stability effects of Cr Mo and Ni in bulk -Fe(C. Acta Physica Sinica, 2016, 65(3): 037101.doi:10.7498/aps.65.037101 |
| [2] |
Wen Ping, Li Chun-Fu, Zhao Yi, Zhang Feng-Chun, Tong Li-Hua.First principles calculation of occupancy, bonding characteristics and alloying effect of Cr, Mo, Ni in bulk α-Fe?. Acta Physica Sinica, 2014, 63(19): 197101.doi:10.7498/aps.63.197101 |
| [3] |
Chen Li-Qun, Yu Tao, Peng Xiao-Fang, Liu Jian.The site preference of refractory element W in NiAl dislocation core and its effects on bond characters. Acta Physica Sinica, 2013, 62(11): 117101.doi:10.7498/aps.62.117101 |
| [4] |
Xue Jin-Xiang, Zhang Ri-Guang, Liu Yan-Ping, Wang Bao-Jun.The Alloying of Ti, C, N in Bulk -Fe and Their Effects on Bond Characters. Acta Physica Sinica, 2012, 61(12): 127101.doi:10.7498/aps.61.127101 |
| [5] |
Chen Cheng-Zhao, Li Ping, Lin Xuan-Ying, Liu Cui-Qing, Qiu Sheng-Hua, Wu Yan-Dan, Yu Chu-Ying.Infrared analysis on hydrogen content and Si—H bonding configuration of hydrogenated nanocrystalline silicon thin films. Acta Physica Sinica, 2009, 58(4): 2565-2571.doi:10.7498/aps.58.2565 |
| [6] |
Shang Jia-Xiang, Yu Xian-Yang.The site preference of 3d transition metals in NiAl and its effects on bond characters. Acta Physica Sinica, 2008, 57(4): 2380-2385.doi:10.7498/aps.57.2380 |
| [7] |
Yu Wei, Li Ya-Chao, Ding Wen-Ge, Zhang Jiang-Yong, Yang Yan-Bin, Fu Guang-Sheng.Bonding configurations and photoluminescence of amorphous Si nanoparticles in SiNx films. Acta Physica Sinica, 2008, 57(6): 3661-3665.doi:10.7498/aps.57.3661 |
| [8] |
Yu Wei, Zhang Li, Wang Bao-Zhu, Lu Wan-Bing, Wang Li-Wei, Fu Guang-Sheng.Hydrogen bonding configurations and energy band structures of hydrogenated nanocrystalline silicon films. Acta Physica Sinica, 2006, 55(4): 1936-1941.doi:10.7498/aps.55.1936 |
| [9] |
Luo Zhi, Lin Xuan-Ying, Lin Shun-Hui, Yu Chu-Ying, Lin Kui-Xun, Yu Yun-Peng, Tan Wei-Feng.Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films. Acta Physica Sinica, 2003, 52(1): 169-174.doi:10.7498/aps.52.169 |
| [10] |
WANG WEI-HUA, BAI HAI-YANG, WANG WEN-KUI.AMORPHIZATION REACTION PROCESS IN Ni/AMORPHOUS Si MULTILAYER. Acta Physica Sinica, 1998, 47(7): 1149-1154.doi:10.7498/aps.47.1149 |
| [11] |
DU KAI-YING, RAO HAI-BO.NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica, 1994, 43(6): 966-972.doi:10.7498/aps.43.966 |
| [12] |
HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
| [13] |
WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
| [14] |
ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
| [15] |
ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING.GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica, 1989, 38(1): 163-169.doi:10.7498/aps.38.163 |
| [16] |
DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
| [17] |
WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
| [18] |
CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG.STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica, 1987, 36(4): 524-528.doi:10.7498/aps.36.524 |
| [19] |
MA HONG-LEI, ZHOU YU-FANG, LI DUN-YIN.EFFECTS OF BONDED HYDROGEN ON THE PHOTOLUMINESCENCE PROPERTIES OF GD a-Si:H THIN FILMS. Acta Physica Sinica, 1986, 35(6): 725-730.doi:10.7498/aps.35.725 |
| [20] |
YAN CHENG.THE INFLUENCE OF THICKNESS, APPLIED ELECTRIC FIELD AND MEDIUM TEMPERATURE ANNEALING ON THE ACTIVATION ENERGIES FOR CONDUCTIVITY OF a-Si:H. Acta Physica Sinica, 1982, 31(12): 62-74.doi:10.7498/aps.31.62 |
下载: