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Zhai Shi-Ming, Liao Huang-Sheng, Zhou Nai-Gen, Huang Hai-Bin, Zhou Lang.Atomic simulation of SiyHxstructure configuration in a-Si:H thin films. Acta Physica Sinica, 2020, 69(7): 076801.doi:10.7498/aps.69.20191275 |
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Chen Jun-Fan, Ren Hui-Zhi, Hou Fu-Hua, Zhou Zhong-Xin, Ren Qian-Shang, Zhang De-Kun, Wei Chang-Chun, Zhang Xiao-Dan, Hou Guo-Fu, Zhao Ying.Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells. Acta Physica Sinica, 2019, 68(2): 028101.doi:10.7498/aps.68.20181759 |
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Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He.S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica, 2010, 59(9): 6538-6544.doi:10.7498/aps.59.6538 |
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui.Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica, 2010, 59(5): 3542-3546.doi:10.7498/aps.59.3542 |
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Liu Bo, Tang Wen-Jin, Song Zhong-Xiao, Chen Ya-Shao, Xu Ke-Wei.Effect of N-doping on the microstructure and properties of amorphous SiC:H diffusion barrier films. Acta Physica Sinica, 2009, 58(3): 2042-2048.doi:10.7498/aps.58.2042 |
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Hu Zhi-Hua, Liao Xian-Bo, Zeng Xiang-Bo, Xu Yan-Yue, Zhang Shi-Bin, Diao Hong-Wei, Kong Guang-Lin.Numerical simulation of nc-Si:H/ c-Si heterojunction solar cells. Acta Physica Sinica, 2003, 52(1): 217-224.doi:10.7498/aps.52.217 |
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PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
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DU KAI-YING, RAO HAI-BO.NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica, 1994, 43(6): 966-972.doi:10.7498/aps.43.966 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING.GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica, 1989, 38(1): 163-169.doi:10.7498/aps.38.163 |
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG.STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica, 1987, 36(4): 524-528.doi:10.7498/aps.36.524 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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WU DAO-HUAI, YE JIAN-MING, PAN HUI-YING, CHENG RU-GUANG.PHOTO-INDUCED DEGRADATION OF UNDOPED AMORPHOUS SILICON HYDRIDE PREPARED BY D. C. GLOW-DISCHARGE DEPOSITION TECHNIQUE. Acta Physica Sinica, 1985, 34(2): 253-258.doi:10.7498/aps.34.253 |
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HE YU-LIANG, YAN YONG-HONG.THE EFFECT OF CRYSTALLIZATION ON HYDROGEN CONTENTS AND BONDING STRUCTURE OF A-Si:H FILMS. Acta Physica Sinica, 1984, 33(10): 1472-1474.doi:10.7498/aps.33.1472 |
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