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Dong Jian-Jun, Deng Bo, Cao Zhu-Rong, Jiang Shao-En.Deduction of temperature and density spatial profile for implosion core by multi-objective optimization. Acta Physica Sinica, 2014, 63(12): 125209.doi:10.7498/aps.63.125209 |
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Gou Jie, He Zhi-Wei, Pan Guo-Hui, Wang Yin-Yue.Density of defect states in low-k porous SiO2:F film researched by SCLC method. Acta Physica Sinica, 2006, 55(6): 2936-2940.doi:10.7498/aps.55.2936 |
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Cheng Bu-Wen, Yao Fei, Xue Chun-Lai, Zhang Jian-Guo, Li Chuan-Bo, Mao Rong-Wei, Zuo Yu-Hua, Luo Li-Ping, Wang Qi-Ming.A method to estimate the strain state of SiGe/Si by measuring the bandgap. Acta Physica Sinica, 2005, 54(9): 4350-4353.doi:10.7498/aps.54.4350 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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LI XIAN-HUANG, LU FANG, SUN HENG-HUI.VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159.doi:10.7498/aps.42.1153 |
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WANG XIANG-DONG, HU JI-HUANG, GE YU-QING, DAI DAO-XUAN.TOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE. Acta Physica Sinica, 1992, 41(6): 992-998.doi:10.7498/aps.41.992 |
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WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
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ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING.XPS AND AES STUDY FOR Au/a-Si:H INTERFACE. Acta Physica Sinica, 1991, 40(2): 275-280.doi:10.7498/aps.40.275 |
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WANG ZHI-CHAO, TENG MIN-KANG, LIU YIN-CHUN.ATUDY OF INTERFACE PROPERTIES OF a-Si:H/a-SiNx:H MULTILAYERS BY PAT. Acta Physica Sinica, 1991, 40(12): 1973-1979.doi:10.7498/aps.40.1973 |
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.LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica, 1989, 38(8): 1235-1244.doi:10.7498/aps.38.1235 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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ZHU MEI-FANG, XU ZHENG-YI.AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA. Acta Physica Sinica, 1989, 38(12): 1988-1995.doi:10.7498/aps.38.1988 |
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ZHANG RUI-QIN, DAI GUO-CAI, GUAN DA-REN, CAI ZHENG-TING.GAP STATES DUE TO INTRINSIC DEFECTS IN a-Si:H. Acta Physica Sinica, 1989, 38(1): 163-169.doi:10.7498/aps.38.163 |
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WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG.OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica, 1988, 37(2): 189-196.doi:10.7498/aps.37.189 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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WU WEN-HAO, HAN DA-XING.MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTS. Acta Physica Sinica, 1988, 37(6): 916-923.doi:10.7498/aps.37.916 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG.STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica, 1987, 36(4): 524-528.doi:10.7498/aps.36.524 |
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