[1] |
Zhang Fu-Ping, Li Xi-Qin, Du Jin-Mei, Liu Yu-Sheng, Ye Fu-Qing.Failure distribution and reliable analysis of ferroelectric ceramics under pulsed electric field. Acta Physica Sinica, 2024, 73(10): 107701.doi:10.7498/aps.73.20231354 |
[2] |
Zhou Hang, Cui Jiang-Wei, Zheng Qi-Wen, Guo Qi, Ren Di-Yuan, Yu Xue-Feng.Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment. Acta Physica Sinica, 2015, 64(8): 086101.doi:10.7498/aps.64.086101 |
[3] |
Jiang Xian-Wei, Dai Guang-Zhen, Lu Shi-Bin, Wang Jia-Yu, Dai Yue-Hua, Chen Jun-Ning.Effect of Al doping on the reliability of HfO2 as a trapping layer: First-principles study. Acta Physica Sinica, 2015, 64(9): 091301.doi:10.7498/aps.64.091301 |
[4] |
Xu Zhi-Cheng, Zhong Wei-Rong.Erratum:Transient kinetics of graphene bombarded by fullerene [Acta Phys. Sin. 2014, 63, 083401]. Acta Physica Sinica, 2014, 63(11): 119901.doi:10.7498/aps.63.119901 |
[5] |
Li Ri, Wang Jian, Zhou Li-Ming, Pan Hong.The reliability analysis of using the volume averaging method to simulate the solidification process in a ingot. Acta Physica Sinica, 2014, 63(12): 128103.doi:10.7498/aps.63.128103 |
[6] |
Rao Zhong-Hao, Wang Shuang-Feng, Zhang Yan-Lai, Peng Fei-Fei, Cai Song-Heng.Molecular dynamics simulation of the thermophysical properties of phase change material. Acta Physica Sinica, 2013, 62(5): 056601.doi:10.7498/aps.62.056601 |
[7] |
Wang Xin-Hua, Wang Jian-Hui, Pang Lei, Chen Xiao-Juan, Yuan Ting-Ting, Luo Wei-Jun, Liu Xin-Yu.Reliability of SiN-based MIM capacitors in GaN MMIC. Acta Physica Sinica, 2012, 61(17): 177302.doi:10.7498/aps.61.177302 |
[8] |
Song Wei-Cai, Zhang Yong-Jin.Reliability of multi-state and multi-subsystem below stress-strength interference. Acta Physica Sinica, 2011, 60(2): 021201.doi:10.7498/aps.60.021201 |
[9] |
Zhang Yong-Jin, Wang Zhong-Zhi.Cumulative damage model and parameter estimate about a kind of time-sharing redundant system. Acta Physica Sinica, 2009, 58(9): 6074-6079.doi:10.7498/aps.58.6074 |
[10] |
Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu.The dynamic reliability of ultra-thin gate oxide and its breakdown characteristics. Acta Physica Sinica, 2008, 57(4): 2524-2528.doi:10.7498/aps.57.2524 |
[11] |
Zhang Yi-Min, Zhang Xu-Fang.Reliability analysis of double random Duffing system. Acta Physica Sinica, 2008, 57(7): 3989-3995.doi:10.7498/aps.57.3989 |
[12] |
Yang Hong, Chen Min.A molecular dynamics simulation of thermodynamic properties of undercooled liquid Ni2TiAl alloy. Acta Physica Sinica, 2006, 55(5): 2418-2421.doi:10.7498/aps.55.2418 |
[13] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang.Noise as a representation for reliability of light emitting diode. Acta Physica Sinica, 2006, 55(3): 1384-1389.doi:10.7498/aps.55.1384 |
[14] |
Zhao Yi, Wan Xing-Gong.Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process. Acta Physica Sinica, 2006, 55(6): 3003-3006.doi:10.7498/aps.55.3003 |
[15] |
Gu Shu-Long, Zhang Hong-Bin.Mei symmetry, Noether symmetry and Lie symmetry of a Vacco system. Acta Physica Sinica, 2005, 54(9): 3983-3986.doi:10.7498/aps.54.3983 |
[16] |
Cui Shou-Xin, Cai Ling-Cang, Hu Hai-Quan, Guo Yong-Xin, Xiang Shi-Kai, Jing Fu-Qian.Molecular dynamics simulation for thermophysical parameters of sodium chloride solids at high temperature and high pressure. Acta Physica Sinica, 2005, 54(6): 2826-2831.doi:10.7498/aps.54.2826 |
[17] |
Liu Hong-Xia, Zheng Xue-Feng, Han Xiao-Liang, Hao Yue, Z hang Mian.A new method to evaluate reliability in GaAs PHEMT's. Acta Physica Sinica, 2003, 52(10): 2576-2579.doi:10.7498/aps.52.2576 |
[18] |
XIA JIANG-FAN, ZHANG JUN, ZHANG JIE.MODELING THE ASTROPHYSICAL DYNAMICAL PROCESS WITH LASER-PLASMAS. Acta Physica Sinica, 2001, 50(5): 994-1000.doi:10.7498/aps.50.994 |
[19] |
SUN JIAN-GANG, GUAN SHAN, JI XI-PING, HE DA-REN, WANG BING-HONG, QU SHI-XIAN.NEW CRISES DUE TO DYNAMICAL DISCONTINUITY. Acta Physica Sinica, 1996, 45(12): 1970-1977.doi:10.7498/aps.45.1970 |
[20] |
CHAI ZHEN-MING.RELIABILITY OF CIRCUIT ELEMENTS BY REDUNDANCY METHOD. Acta Physica Sinica, 1964, 20(8): 705-719.doi:10.7498/aps.20.705 |