| [1] |
Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
| [2] |
Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
| [3] |
Ke Shao-Ying, Wang Chong, Pan Tao, He Peng, Yang Jie, Yang Yu.Optimization design of hydrogenated amorphous silicon germanium thin film solar cell with graded band gap profile. Acta Physica Sinica, 2014, 63(2): 028802.doi:10.7498/aps.63.028802 |
| [4] |
Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua.Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD. Acta Physica Sinica, 2013, 62(13): 138501.doi:10.7498/aps.62.138501 |
| [5] |
Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
| [6] |
Chen Gu-Ran, Song Chao, Xu Jun, Wang Dan-Qing, Xu Ling, Ma Zhong-Yuan, Li Wei, Huang Xin-Fan, Chen Kun-Ji.Molecular dynamics simulations of pulsed laser crystallization of amorphous silicon ultrathin films. Acta Physica Sinica, 2010, 59(8): 5681-5686.doi:10.7498/aps.59.5681 |
| [7] |
Duan Bao-Xing, Yang Yin-Tang.Calculation of Raman shifts of Si（1-x）Gex and amorphous silicon using Keating model. Acta Physica Sinica, 2009, 58(10): 7114-7118.doi:10.7498/aps.58.7114 |
| [8] |
Zhou Jiang, Wei De-Yuan, Xu Jun, Li Wei, Song Feng-Qi, Wan Jian-Guo, Xu Ling, Ma Zhong-Yuan.Electron field emission of nanocrystalline Si prepared by laser crystallization. Acta Physica Sinica, 2008, 57(6): 3674-3678.doi:10.7498/aps.57.3674 |
| [9] |
Liao Nai-Man, Li Wei, Jiang Ya-Dong, Kuang Yue-Jun, Qi Kang-Cheng, Li Shi-Bin, Wu Zhi-Ming.Thickness and optical constant determination of hydrogenated amorphous silicon thin film from transmittance spectra of ellipsometer. Acta Physica Sinica, 2008, 57(3): 1542-1547.doi:10.7498/aps.57.1542 |
| [10] |
Li Shi-Bin, Wu Zhi-Ming, Yuan Kai, Liao Nai-Man, Li Wei, Jiang Ya-Dong.Study on thermal conductivity of hydrogenated amorphous silicon films. Acta Physica Sinica, 2008, 57(5): 3126-3131.doi:10.7498/aps.57.3126 |
| [11] |
Liu Guo-Han, Ding Yi, Zhu Xiu-Hong, Chen Guang-Hua, He De-Yan.Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD. Acta Physica Sinica, 2006, 55(11): 6147-6151.doi:10.7498/aps.55.6147 |
| [12] |
Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
| [13] |
Zhao Qian, Wang Bo, Yan Hui, M.Kumeda, T.Shimizu.Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon. Acta Physica Sinica, 2004, 53(1): 151-155.doi:10.7498/aps.53.151 |
| [14] |
Luo Zhi, Lin Xuan-Ying, Lin Shun-Hui, Yu Chu-Ying, Lin Kui-Xun, Yu Yun-Peng, Tan Wei-Feng.Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films. Acta Physica Sinica, 2003, 52(1): 169-174.doi:10.7498/aps.52.169 |
| [15] |
LEI HONG-BING, YANG QIN-QING, WANG QI-MING.CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON. Acta Physica Sinica, 1998, 47(7): 1201-1206.doi:10.7498/aps.47.1201 |
| [16] |
ZHU MEI-FANG.TRANSPORT IN HYDROGENATED AMORPHOUS SILICON AT LOW TEMPERATURES. Acta Physica Sinica, 1996, 45(3): 499-505.doi:10.7498/aps.45.499 |
| [17] |
YU GONG, HAO MAO-SHENG, ZHANG FANG-QING, CHEN GUANG-HUA.STUDY ON STRUCTURAL AND VIBRATIONAL PROPERTIES OF AMORPHOUS SILICON FILMS USING A SIMULATING ANNEALING MODEL. Acta Physica Sinica, 1993, 42(2): 314-319.doi:10.7498/aps.42.314 |
| [18] |
CHEN GUANG-HUA, YU GONG, ZHANG FANG-QING, WU TIAN-XI.SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS. Acta Physica Sinica, 1992, 41(10): 1700-1705.doi:10.7498/aps.41.1700 |
| [19] |
DAI GUO-CAI, GUAN DA-REN, DENG CONG-HAO.A COMPLEX MODEL FOR THE HYDROGENATED VACANCY IN CRYSTALLINE SILICON. Acta Physica Sinica, 1986, 35(6): 709-715.doi:10.7498/aps.35.709 |
| [20] |
XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
下载: