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Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
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Chen Jian-Hui, Yang Jing, Shen Yan-Jiao, Li Feng, Chen Jing-Wei, Liu Hai-Xu, Xu Ying, Mai Yao-Hua.Investigation of post-annealing enhancement effect of passivation quality of hydrogenated amorphous silicon. Acta Physica Sinica, 2015, 64(19): 198801.doi:10.7498/aps.64.198801 |
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Ke Shao-Ying, Wang Chong, Pan Tao, He Peng, Yang Jie, Yang Yu.Optimization design of hydrogenated amorphous silicon germanium thin film solar cell with graded band gap profile. Acta Physica Sinica, 2014, 63(2): 028802.doi:10.7498/aps.63.028802 |
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Liu Bo-Fei, Bai Li-Sha, Zhang De-Kun, Wei Chang-Chun, Sun Jian, Hou Guo-Fu, Zhao Ying, Zhang Xiao-Dan.Effect of a-Si：H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell. Acta Physica Sinica, 2013, 62(24): 248801.doi:10.7498/aps.62.248801 |
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Yu Yao, Zhang Jing-Si, Chen Dai-Dai, Guo Rui-Qian, Gu Zhi-Hua.Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD. Acta Physica Sinica, 2013, 62(13): 138501.doi:10.7498/aps.62.138501 |
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Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
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Liao Nai-Man, Li Wei, Jiang Ya-Dong, Kuang Yue-Jun, Qi Kang-Cheng, Li Shi-Bin, Wu Zhi-Ming.Thickness and optical constant determination of hydrogenated amorphous silicon thin film from transmittance spectra of ellipsometer. Acta Physica Sinica, 2008, 57(3): 1542-1547.doi:10.7498/aps.57.1542 |
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Li Shi-Bin, Wu Zhi-Ming, Yuan Kai, Liao Nai-Man, Li Wei, Jiang Ya-Dong.Study on thermal conductivity of hydrogenated amorphous silicon films. Acta Physica Sinica, 2008, 57(5): 3126-3131.doi:10.7498/aps.57.3126 |
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Liu Guo-Han, Ding Yi, Zhu Xiu-Hong, Chen Guang-Hua, He De-Yan.Preparation and characterization of hydrogenated microcrystalline silicon films by HW-MWECR-CVD. Acta Physica Sinica, 2006, 55(11): 6147-6151.doi:10.7498/aps.55.6147 |
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Zhang Xiao-Dan, Zhao Ying, Zhu Feng, Wei Chang-Chun, Mai Yao-Hua, Gao Yan-Tao, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen.Secondary ion mass spectroscopic depth profile analysis of oxygen contamination in hydrogenated microcrystalline silicon. Acta Physica Sinica, 2005, 54(4): 1895-1898.doi:10.7498/aps.54.1895 |
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Gu Jin-Hua, Zhou Yu-Qin, Zhu Mei-Fang, Li Guo-Hua, Ding Kun, Zhou Bing-Qing, Liu Feng-Zhen, Liu Jin-Long, Zhang Qun-Fang.Study on growth mechanism of low-temperature prepared microcrystalline Si thin f ilms. Acta Physica Sinica, 2005, 54(4): 1890-1894.doi:10.7498/aps.54.1890 |
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Zhao Qian, Wang Bo, Yan Hui, M.Kumeda, T.Shimizu.Annealing effect on the photoluminescence and dangling bonddensity in erbium-doped hydrogenated amorphous silicon. Acta Physica Sinica, 2004, 53(1): 151-155.doi:10.7498/aps.53.151 |
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Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
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Luo Zhi, Lin Xuan-Ying, Lin Shun-Hui, Yu Chu-Ying, Lin Kui-Xun, Yu Yun-Peng, Tan Wei-Feng.Infrared analysis on hydrogen content and Si-H bonding configurations of hydrogenated amorphous silicon films. Acta Physica Sinica, 2003, 52(1): 169-174.doi:10.7498/aps.52.169 |
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Lin Kui-Xun, Lin Xuan-Ying, Liang Hou-Yun, Chi Ling-Fei, Yu Chu-Ying, Huang Chuang-Jun.. Acta Physica Sinica, 2002, 51(4): 863-866.doi:10.7498/aps.51.863 |
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ZHANG JIE, LUO JIAN-LIN, BAI HAI-YANG, WANG WEI-HUA, CHEN ZHAO-JIA, MENG JI-BAO, WANG YU-PENG, LIN DE-HUA, TONG CUN-ZHU, JIN DUO.LOW TEMPERATURE SPECIFIC HEAT ON BULK AMORPHOUS Zr-Ti-Cu-Ni-Be ALLOY. Acta Physica Sinica, 2001, 50(9): 1747-1750.doi:10.7498/aps.50.1747 |
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LIANG JIAN-JUN, WANG YONG-QIAN, CHEN WEI-DE, WANG ZHAN-GUO, CHANG YONG.PHOTOLUMINESCENCE OF ERBIUM-DOPED HYDROGENATED AMORPHOUS SiOx(0
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XU GANG-YI, WANG TIAN-MIN, HE YU-LIANG, MA ZHI-XUN, ZHENG GUO-ZHEN.THE TRANSPORT MECHANISM IN NANOCRYSTALLINE SILICON FILMS AT LOW TEMPERATURE. Acta Physica Sinica, 2000, 49(9): 1798-1803.doi:10.7498/aps.49.1798 |
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CHEN GUANG-HUA, YU GONG, ZHANG FANG-QING, WU TIAN-XI.SPIN DEFECT STATES IN HYDROGENATED AMORPHOUS GERMANIUM-CARBON FILMS. Acta Physica Sinica, 1992, 41(10): 1700-1705.doi:10.7498/aps.41.1700 |
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BAO XI-MAO, HUANG XIN-FAN, XING KUN-SHAN.TEMPERATURE FIELD CONTROL MODEL OF LASER CRYSTALLIZATION OF HYDROGENATED AMORPHOUS Si. Acta Physica Sinica, 1987, 36(1): 74-77.doi:10.7498/aps.36.74 |
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