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Zhong Zi-Yuan, He Kai, Yuan Yun, Wang Tao, Gao Gui-Long, Yan Xin, Li Shao-Hui, Yin Fei, Tian Jin-Shou.Photorefractive effect of low-temperature-grown aluminum gallium arsenide. Acta Physica Sinica, 2019, 68(16): 167801.doi:10.7498/aps.68.20190459 |
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Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing.Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica, 2017, 66(22): 227801.doi:10.7498/aps.66.227801 |
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Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong.Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica, 2017, 66(8): 087801.doi:10.7498/aps.66.087801 |
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Chang Xiao-Yang, Yao Shun, Zhang Qi-Ling, Zhang Yang, Wu Bo, Zhan Rong, Yang Cui-Bai, Wang Zhi-Yong.Anti-radiation of space triple-junction solar cell based on distributed Bragg reflector structure. Acta Physica Sinica, 2016, 65(10): 108801.doi:10.7498/aps.65.108801 |
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Niu Zong-Tao, Zhang Cheng, Ma Yun-Fei, Wang Rui-Xue, Chen Gen-Yong, Yan Ping, Shao Tao.Effect of flow rate on the characteristics of repetitive microsecond-pulse gliding discharges. Acta Physica Sinica, 2015, 64(19): 195204.doi:10.7498/aps.64.195204 |
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Yang Jian-Song, Li Bao-Xing.Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica, 2006, 55(12): 6562-6569.doi:10.7498/aps.55.6562 |
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Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi.Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica, 2005, 54(4): 1904-1908.doi:10.7498/aps.54.1904 |
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Xu Yue-Sheng, Tang Lei, Wang Hai-Yun, Liu Cai-Chi, Hao Jing-Chen.Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica, 2004, 53(2): 651-655.doi:10.7498/aps.53.651 |
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ZHOU FU-ZHENG, MA GUO-BIN, SHEN LI-QING, ZHU QING-CHUN, TAN WEI-HAN.STUDIES ON THE ps GAIN-SWITCHING OF A SEMICONDUCTOR LASER. Acta Physica Sinica, 1994, 43(4): 580-590.doi:10.7498/aps.43.580 |
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CHENG ZHAO-NIAN, WANG WEI-YUAN.ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs. Acta Physica Sinica, 1985, 34(7): 968-972.doi:10.7498/aps.34.968 |
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MO DANG, PAN SHI-HONG, W. E. SPICER, I. LINDAU.PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE. Acta Physica Sinica, 1983, 32(11): 1467-1470.doi:10.7498/aps.32.1467 |
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CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN.CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica, 1982, 31(7): 922-931.doi:10.7498/aps.31.922 |
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WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN.SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1982, 31(1): 71-77.doi:10.7498/aps.31.71 |
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WANG WEI-YUAN.MEASUREMENT OF CARRIER LIFETIME OF GaAs DIODES WITH p-n AND M-S JUNCTIONS BY STEP RECOVERY METHOD. Acta Physica Sinica, 1979, 28(3): 341-349.doi:10.7498/aps.28.341 |
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ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU.MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica, 1979, 28(3): 350-357.doi:10.7498/aps.28.350 |
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WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING.A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica, 1979, 28(5): 86-95.doi:10.7498/aps.28.86 |
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GAAS SINGLE CRYSTAL RESEARCH GROUP.TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica, 1976, 25(2): 179-180.doi:10.7498/aps.25.179 |
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SHAW NAN, LIU YI-HUAN.X-RAY MEASUREMENT OF THE THERMAL EXPANSION OF GERMANIUM, SILICON, INDIUM ANTIMONIDE AND GALLIUM ARSENIDE. Acta Physica Sinica, 1964, 20(8): 699-704.doi:10.7498/aps.20.699 |
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YUAN KONG, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica, 1964, 20(8): 806-813.doi:10.7498/aps.20.806 |
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