| [1] |
Gao Cheng-Hao, Xu Feng, Zhang Li, Zhao De-Sheng, Wei Xing, Che Ling-Juan, Zhuang Yong-Zhang, Zhang Bao-Shun, Zhang Jing.Ion implantation isolation based micro-light-emitting diode device array properties. Acta Physica Sinica, 2020, 69(2): 027802.doi:10.7498/aps.69.20191418 |
| [2] |
Zhao Jing, Yu Hui-Long, Liu Wei-Wei, Guo Jing.Analysis of the relation between spectral response and absorptivity of GaAs photocathode. Acta Physica Sinica, 2017, 66(22): 227801.doi:10.7498/aps.66.227801 |
| [3] |
Fan Zheng-Fu, Tan Zhi-Yong, Wan Wen-Jian, Xing Xiao, Lin Xian, Jin Zuan-Ming, Cao Jun-Cheng, Ma Guo-Hong.Study on ultrafast dynamics of low-temperature grown GaAs by optical pump and terahertz probe spectroscopy. Acta Physica Sinica, 2017, 66(8): 087801.doi:10.7498/aps.66.087801 |
| [4] |
Qin Xi-Feng, Ma Gui-Jie, Shi Shu-Hua, Wang Feng-Xiang, Fu Gang, Zhao Jin-Hua.Investigation on range distribution of Er ions implanted in silicon-on-insulator. Acta Physica Sinica, 2014, 63(17): 176101.doi:10.7498/aps.63.176101 |
| [5] |
Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
| [6] |
Yang Jian-Song, Li Bao-Xing.Study of the stability of gallium-arsenic ion clusters. Acta Physica Sinica, 2006, 55(12): 6562-6569.doi:10.7498/aps.55.6562 |
| [7] |
Xu Yue-Sheng, Yang Xin-Rong, Wang Hai-Yun, Tang Lei, Liu Cai-Chi, Wei Xin, Qin Dao-Zhi.Micro-distribution of carbon in semi-insulating gallium arsenide. Acta Physica Sinica, 2005, 54(4): 1904-1908.doi:10.7498/aps.54.1904 |
| [8] |
Xu Yue-Sheng, Tang Lei, Wang Hai-Yun, Liu Cai-Chi, Hao Jing-Chen.Study on the cell structure in semi-insulation gallium arsenide. Acta Physica Sinica, 2004, 53(2): 651-655.doi:10.7498/aps.53.651 |
| [9] |
Shao Qi-Jun, Pan Zheng-Ying.. Acta Physica Sinica, 1995, 44(3): 479-487.doi:10.7498/aps.44.479 |
| [10] |
MA HAI-MING, LI FU-MING.SELF-TRANSMISSION OF PICOSECOND LIGHT PULSES IN GaAs. Acta Physica Sinica, 1989, 38(9): 1530-1533.doi:10.7498/aps.38.1530 |
| [11] |
CHENG ZHAO-NIAN, WANG WEI-YUAN.ELECTRONIC STOPPING POWER OF B+ IMPLANTATION IN GaAs. Acta Physica Sinica, 1985, 34(7): 968-972.doi:10.7498/aps.34.968 |
| [12] |
MO DANG, PAN SHI-HONG, W. E. SPICER, I. LINDAU.PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE. Acta Physica Sinica, 1983, 32(11): 1467-1470.doi:10.7498/aps.32.1467 |
| [13] |
WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN.SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1982, 31(1): 71-77.doi:10.7498/aps.31.71 |
| [14] |
WANG DE-NING, CHENG ZHAO-NIAN, WANG WEI-YUAN.THEORETICAL ESTIMATES OF R, RpAND △Rp, OF THE ION IMPLANTATION IN AMORPHOUS TARGETS. Acta Physica Sinica, 1980, 29(11): 1452-1461.doi:10.7498/aps.29.1452 |
| [15] |
MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING.ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica, 1980, 29(9): 1214-1216.doi:10.7498/aps.29.1214 |
| [16] |
ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU.MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica, 1979, 28(3): 350-357.doi:10.7498/aps.28.350 |
| [17] |
WANG WEI-YUAN, XU JING-YANG, NI QI-MIN, TAN RU-HUAN, LIU YUE-QIN, QIU YUE-YING.A STUDY OF PROTON IMPLANTATION FOR GaAs. Acta Physica Sinica, 1979, 28(5): 86-95.doi:10.7498/aps.28.86 |
| [18] |
GAAS SINGLE CRYSTAL RESEARCH GROUP.TE-DOPED GaAs CRYSTALS OF LOW DISLOCATION DENSITY GROWN BY THE HORIZONTAL BRIDGMAN METHOD. Acta Physica Sinica, 1976, 25(2): 179-180.doi:10.7498/aps.25.179 |
| [19] |
KUO CHANG-LIN.SEVEN NEW HEXAGONAL POLYTYPES OF SILICON CARBIDE. Acta Physica Sinica, 1965, 21(1): 161-170.doi:10.7498/aps.21.161 |
| [20] |
YUAN KONG, CHEN NING-CHIANG.PRESSURE DEPENDENCE OF SOME TUNNELING PARAMETERS IN NARROW GALLIUM ARSENIDE P-N JUNCTIONS. Acta Physica Sinica, 1964, 20(8): 806-813.doi:10.7498/aps.20.806 |
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