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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song.Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901.doi:10.7498/aps.69.20200029 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao.Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113.doi:10.7498/aps.58.7108 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng.A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169.doi:10.7498/aps.57.5165 |
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Lu Ting, Zhou Hong-Yu, Ding Xiao-Ji, Wang Xin-Fu, Zhu Guang-Hua.The study of depth distribution for ion with low energy implanted into plant seeds and mechanism of biological effect. Acta Physica Sinica, 2005, 54(10): 4822-4826.doi:10.7498/aps.54.4822 |
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Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang.Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica, 2004, 53(9): 2910-2914.doi:10.7498/aps.53.2910 |
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Xie Jing-Yi, Zhou Hong-Yu, Wang Ping, Ding Xiao-Ji, Liu Zhi-Guo, Song Hai, Lu Ting, Zhu Guang-Hua.A study of directional effect of depth-concentration distribution for implanted heavy ions with low energies in dry peanut seeds. Acta Physica Sinica, 2003, 52(10): 2530-2533.doi:10.7498/aps.52.2530 |
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Chen Gui-Bin, Lu Wei, Liao Zhong-Lin, Li Zhi-Feng, Chai Wei-Ying, Shen Xue-Chu, Chen Chang-Ming, Zhu De-Zhang, Hu Jun, Li Ming-Qian.. Acta Physica Sinica, 2002, 51(3): 659-662.doi:10.7498/aps.51.659 |
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ZOU YUN-JUAN, YAN HUI, CHEN GUANG-HUA, JIN YUN-FAN, YANG RU.ION RADIATION DAMAGE OF C60 FILMS. Acta Physica Sinica, 1998, 47(11): 1923-1927.doi:10.7498/aps.47.1923 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG.INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP. Acta Physica Sinica, 1991, 40(3): 476-482.doi:10.7498/aps.40.476 |
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LIU SHI-JIE, S. U. CAMPISANO.LASER PULSE ANNEALING ION-IMPLANTED GaAs. Acta Physica Sinica, 1988, 37(5): 842-846.doi:10.7498/aps.37.842 |
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HE XING-FEI, MO DANG.MULTILAYER ANALYSIS OF DAMAGE PROFILE IN ION IMPLANTED SILICON BY OPTICAL SPECTROMETRY. Acta Physica Sinica, 1986, 35(12): 1567-1573.doi:10.7498/aps.35.1567 |
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QIAN YOU-HUA, CHEN LIANG-YAO.ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER. Acta Physica Sinica, 1982, 31(5): 646-653.doi:10.7498/aps.31.646 |
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CHENG ZHAO-NIAN, ZHU WEN-YU, WANG WEI-YUAN.CALCULATION OF RANGE STATISTIC PARAMETERS FOR IONS IMPLANTED IN GaAs. Acta Physica Sinica, 1982, 31(7): 922-931.doi:10.7498/aps.31.922 |
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WANG WEI-YUAN, QIAO YONG, LIN CHENG-LU, LUO CHAO-WEI, ZHOU YONG-QUAN.SILICON IMPLANTATION IN SEMI-INSULATING GaAs SUBSTRATE. Acta Physica Sinica, 1982, 31(1): 71-77.doi:10.7498/aps.31.71 |
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MO DANG, YE XIAN-JING.ELLIPSOMETRIC SPECTRUM AND OPTICAL PROPERTIES OF ION IMPLANTED SILICON. Acta Physica Sinica, 1981, 30(10): 1287-1294.doi:10.7498/aps.30.1287 |
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