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Bai Yu-Rong, Li Yong-Hong, Liu Fang, Liao Wen-Long, He Huan, Yang Wei-Tao, He Chao-Hui.Simulation of displacement damage in indium phosphide induced by space heavy ions. Acta Physica Sinica, 2021, 70(17): 172401.doi:10.7498/aps.70.20210303 |
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Zhao Zi-Yuan, Li Yu-Jun, Wang Fu-Shuai, Zhang Qi, Hou Mei-Ying, Li Wen-Hui, Ma Gang.Elastic behavior of glass-rubber mixed particles system. Acta Physica Sinica, 2018, 67(10): 104502.doi:10.7498/aps.67.20172772 |
[3] |
Liao Guang-Kai, Long Zhi-Lin, Xu Fu, Liu Wei, Zhang Zhi-Yang, Yang Miao.Investigation on the viscoelastic behavior of an Fe-base bulk amorphous alloys based on the fractional order rheological model. Acta Physica Sinica, 2015, 64(13): 136101.doi:10.7498/aps.64.136101 |
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Hu Ya-Ya, Zhu Yuan-Yuan, Zhou Bei-Bei, Liu Shuo, Liu Yong, Xiong Rui, Shi Jing.Magnetic property and electronic structure of BaFe4-xTi2+xO11. Acta Physica Sinica, 2015, 64(11): 117501.doi:10.7498/aps.64.117501 |
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Liu Jie, Liu Bang-Wu, Xia Yang, Li Chao-Bo, Liu Su.Study on the optical characteristic of black silicon antireflection coating prepared by plasma immersion ion implantation. Acta Physica Sinica, 2012, 61(14): 148102.doi:10.7498/aps.61.148102 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Zhao Xue-Chuan, Liu Xiao-Ming, Gao Yuan, Zhuang Zhuo.Molecular dynamical investigation on plastic behavior of Cu(100) twist-grain boundary under shear load. Acta Physica Sinica, 2010, 59(9): 6362-6368.doi:10.7498/aps.59.6362 |
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Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min.Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica, 2009, 58(8): 5693-5699.doi:10.7498/aps.58.5693 |
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Liu Xiao-Ming, You Xiao-Chuan, Liu Zhan-Li, Nie Jun-Feng, Zhuang Zhuo.Molecular dynamical investigation on plastic behavior of Cu(100) twist-grain boundary under uniaxial tension. Acta Physica Sinica, 2009, 58(3): 1849-1856.doi:10.7498/aps.58.1849 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng.A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169.doi:10.7498/aps.57.5165 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Zhang Xiao-Dong, Lin De-Xu, Li Gong-Ping, You Wei, Zhang Li-Min, Zhang Yu, Liu Zheng-Min.Broadband yellow luminescence in the photoluminescence spectra of n-GaN implanted by the different ions. Acta Physica Sinica, 2006, 55(10): 5487-5493.doi:10.7498/aps.55.5487 |
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Deng Wen-Ji.. Acta Physica Sinica, 2002, 51(6): 1171-1174.doi:10.7498/aps.51.1171 |
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WANG WEI-XING, CHANG TIE-QIANG, SU XIU-MIN.NONLINEAR BEHAVIOR OF STIMULATED RAMAN SCATTERING IN INHOMOGENEOUS PLASMA. Acta Physica Sinica, 1994, 43(5): 766-771.doi:10.7498/aps.43.766 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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GUO SHI-CHONG, CAI SHI-DONG.NONLINEAR BEHAVIOR OF TEARING MODES NEAR THRESHOLD. Acta Physica Sinica, 1984, 33(6): 861-866.doi:10.7498/aps.33.861 |
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QIAN YOU-HUA, CHEN LIANG-YAO.ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER. Acta Physica Sinica, 1982, 31(5): 646-653.doi:10.7498/aps.31.646 |
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MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING.ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica, 1980, 29(9): 1214-1216.doi:10.7498/aps.29.1214 |