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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song.Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901.doi:10.7498/aps.69.20200029 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Hu Xiao-Jun, Hu Heng, Chen Xiao-Hu, Xu Bei.The n-type conduction and microstructural properties of phosphorus ion implanted nanocrystalline diamond films. Acta Physica Sinica, 2011, 60(6): 068101.doi:10.7498/aps.60.068101 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Miao Jing-Wei, Wang Pei-Lu, Zhu Zhou-Sen, Yuan Xue-Dong, Wang Hu, Yang Chao-Wen, Shi Mian-Gong, Miao Lei, Sun Wei-Li, Zhang Jing, Liao Xue-Hua.Photoluminescence spectrum of monocrystalline Si implanted by nitrogen cluster ions. Acta Physica Sinica, 2008, 57(4): 2174-2178.doi:10.7498/aps.57.2174 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng.A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169.doi:10.7498/aps.57.5165 |
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Hao Xiao-Peng, Wang Bao-Yi, Yu Run-Sheng, Wei Long.Zirconium-ion implantation of zircaloy-4 investiged by slow positron beam. Acta Physica Sinica, 2007, 56(11): 6543-6546.doi:10.7498/aps.56.6543 |
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Chen Zhi-Quan, Kawasuso Atsuo.Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam. Acta Physica Sinica, 2006, 55(8): 4353-4357.doi:10.7498/aps.55.4353 |
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Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang.Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica, 2004, 53(9): 2910-2914.doi:10.7498/aps.53.2910 |
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Chen Gui-Bin, Lu Wei, Cai Wei-Ying, Li Zhi-Feng, Chen Xiao-Shuang, Hu Xiao-Ning, He Li, Shen Xue-Chu.Optimizing boron implantation dose of HgCdTe infrared detectors. Acta Physica Sinica, 2004, 53(3): 911-914.doi:10.7498/aps.53.911 |
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WANG YIN-SHU, LI JIN-MIN, JIN YUN-FAN, WANG YU-TIAN, LIN LAN-YING.THE FORMATION AND CHARACTERISTICS OF Si1-xCx ALLOYS IN Si CRYSTALS BY MEANS OF IMPLANTATION OF CIONS WITH DIFFERENT DOSES. Acta Physica Sinica, 2000, 49(11): 2210-2213.doi:10.7498/aps.49.2210 |
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LIU JIA-LU, ZHANG TING-QING, FENG JIAN-HUA, ZHOU GUAN-SHAN, YING MING-JIONG.STUDY OF B+-IMPLANTED HgCdTe UNDER RAPID THERMAL ANNEALING. Acta Physica Sinica, 1998, 47(1): 47-52.doi:10.7498/aps.47.47 |
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Lu Wu-Xing, R.J.Schreatelkamp, J.R.Liefting, F.W.Saris.. Acta Physica Sinica, 1995, 44(7): 1101-1107.doi:10.7498/aps.44.1101 |
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TIAN REN-HE, LU WU-XING, LI ZHU-HUAI, GAO YU-ZUN.A STUDY OF SECONDARY DEFECTS IN ION- IMPLANTED InSb. Acta Physica Sinica, 1992, 41(5): 809-813.doi:10.7498/aps.41.809 |
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SHEN HONG-LIE, YANG GEN-QING, ZHOU ZU-YAO, ZOU SHI-CHANG.INVESTIGATION OF AMPHOTERIC BEHAVIOR OF SILICON IMPLANTED INTO InP. Acta Physica Sinica, 1991, 40(3): 476-482.doi:10.7498/aps.40.476 |
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LIU SHI-JIE, S. U. CAMPISANO.LASER PULSE ANNEALING ION-IMPLANTED GaAs. Acta Physica Sinica, 1988, 37(5): 842-846.doi:10.7498/aps.37.842 |
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QIAN YOU-HUA, CHEN LIANG-YAO.ELECTROLYTE ELECTROREFLECTANCE (EER) SPECTROSCOPY OF ION IMPLANTED SILICON LAYER. Acta Physica Sinica, 1982, 31(5): 646-653.doi:10.7498/aps.31.646 |
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XIA RI-YUAN.IMPURITY OUT-DIFFUSION MODEL IN RECRYSTALLIZATION OF AMORPHOUS LAYER DUE TO HIGH DOSE ION IMPLANTATION. Acta Physica Sinica, 1980, 29(5): 566-576.doi:10.7498/aps.29.566 |
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MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING.ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica, 1980, 29(9): 1214-1216.doi:10.7498/aps.29.1214 |
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