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Chen Chi-Ting, Wu Lei, Wang Xia, Wang Ting, Liu Yan-Jun, Jiang Jun, Dong Chen-Zhong.Theoretical study of static dipole polarizabilities and hyperpolarizability of B2+and B+ions. Acta Physica Sinica, 2023, 72(14): 143101.doi:10.7498/aps.72.20221990 |
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Liu Wei, Ping Yun-Xia, Yang Jun, Xue Zhong-Ying, Wei Xing, Wu Ai-Min, Yu Wen-Jie, Zhang Bo.Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing. Acta Physica Sinica, 2021, 70(11): 116801.doi:10.7498/aps.70.20202118 |
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Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song.Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901.doi:10.7498/aps.69.20200029 |
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Shen Dan-Ping, Zhang Xiao-Dong, Sun Yan, Kang Ting-Ting, Dai Ning, Chu Jun-Hao, Yu Guo-Lin.Magnetotransport property of negative band gap HgCdTe bulk material. Acta Physica Sinica, 2017, 66(24): 247301.doi:10.7498/aps.66.247301 |
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Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun.Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501.doi:10.7498/aps.63.047501 |
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Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju.Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101.doi:10.7498/aps.60.066101 |
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Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling.Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637.doi:10.7498/aps.59.1632 |
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Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong.Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308.doi:10.7498/aps.58.3302 |
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Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng.A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169.doi:10.7498/aps.57.5165 |
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Zhang Li, Jiang Chang-Zhong, Ren Feng, Chen Hai-Bo, Shi Ying, Fu Qiang.Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere. Acta Physica Sinica, 2004, 53(9): 2910-2914.doi:10.7498/aps.53.2910 |
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Chen Gui-Bin, Lu Wei, Cai Wei-Ying, Li Zhi-Feng, Chen Xiao-Shuang, Hu Xiao-Ning, He Li, Shen Xue-Chu.Optimizing boron implantation dose of HgCdTe infrared detectors. Acta Physica Sinica, 2004, 53(3): 911-914.doi:10.7498/aps.53.911 |
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XU ZUN-TU, XU JUN-YING, YANG GUO-WEN, ZHANG JING-MING, YIN TAO, ZHAO HONG-DONG, LIAN PENG, SHEN GUANG-DI.DIFFUSION OF ALUMINUM IN DOUBLE QUANTUM WELL STRUCTURE UPON RAPID THERMAL ANNEALING. Acta Physica Sinica, 1998, 47(6): 945-951.doi:10.7498/aps.47.945 |
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LIU JIA-LU, ZHANG TING-QING, LI JIAN-JUN, ZHAO YUAN-FU.SIMS ANALYSIS OF MIGRATION CHARACTERISTICS OF FLUORINE IN BF2+ IMPLANTED POLY-Si GATE UNDER CONVENTIONAL THERMAL ANNEALING. Acta Physica Sinica, 1997, 46(8): 1580-1584.doi:10.7498/aps.46.1580 |
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LI XIAO-LEI, LU FANG, SUN HENG-HUI, HUANG QING-HONG.STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON. Acta Physica Sinica, 1992, 41(6): 985-991.doi:10.7498/aps.41.985 |
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CHEN CUN-LI, LI JIAN-NIAN, HUA WEN-YU.INVESTIGATION OF MECHANISM FOR SOLID PHASE REACTION BY RAPID THERMAL ANNEALING IN Ti-Si SYSTEM. Acta Physica Sinica, 1990, 39(7): 127-133.doi:10.7498/aps.39.127 |
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LU WU-XING, QIAN YA-HONG, TIAN REN-HE, WANG ZHONG-LIE.SUPPRESSION AND ELIMINATION OF SECONDARY DEFECTS IN SILICON IMPLANTED WITH MeV ENERGETIC B+ IONS. Acta Physica Sinica, 1990, 39(2): 254-260.doi:10.7498/aps.39.254 |
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MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING.ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica, 1980, 29(9): 1214-1216.doi:10.7498/aps.29.1214 |
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