[1] |
Lü Yong-Jie, Chen Yan, Ye Fang-Cheng, Cai Li-Bin, Dai Zi-Jie, Ren Yun-Peng.Influcence of external electric field and B/N doping on the band gap of stanene. Acta Physica Sinica, 2024, 73(8): 083101.doi:10.7498/aps.73.20231935 |
[2] |
Deng Wen-Juan, Zhou Tian, Wang Zhuang-Fei, Wu Yue-Chuan, Peng Xin-Cun, Zou Ji-Jun.Theoretical modeling and analyzing structural characteristics of AlGaAs/GaAs negative electron affinity array cathode with optically and electrically injected variable bandgap. Acta Physica Sinica, 2022, 71(23): 237901.doi:10.7498/aps.71.20221330 |
[3] |
Gu Yan-Ni, Wu Xiao-Shan.Oxygen vacancy induced band gap narrowing of the low-temperature vanadium dioxide phase. Acta Physica Sinica, 2017, 66(16): 163102.doi:10.7498/aps.66.163102 |
[4] |
Hou Qing-Yu, Li Wen-Cai, Zhao Chun-Wang.Effect of In–2N heavy co-doping and preferred orientation on the optical band gap and absorption spectrum of ZnO. Acta Physica Sinica, 2015, 64(6): 067101.doi:10.7498/aps.64.067101 |
[5] |
Xu Zhen-Chao, Hou Qing-Yu.GGA+U study on the effects of Ag doping on the electronic structures and absorption spectra of ZnO. Acta Physica Sinica, 2015, 64(15): 157101.doi:10.7498/aps.64.157101 |
[6] |
Ma Hai-Lin, Su Qing.Effect of oxygen pressure on structure and optical band gap of gallium oxide thin films prepared by sputtering. Acta Physica Sinica, 2014, 63(11): 116701.doi:10.7498/aps.63.116701 |
[7] |
Mao Fei, Hou Qing-Yu, Zhao Chun-Wang, Guo Shao-Qiang.First-principle study on the effect of high Pr doping on the optical band gap and absorption spectra of TiO2. Acta Physica Sinica, 2014, 63(5): 057103.doi:10.7498/aps.63.057103 |
[8] |
Hou Qing-Yu, Dong Hong-Ying, Ma Wen, Zhao Chun-Wang.First-principle study on the effect of high Ga doping on the optical band gap and the band-edge of optical absorption of ZnO. Acta Physica Sinica, 2013, 62(15): 157101.doi:10.7498/aps.62.157101 |
[9] |
Yang Shuang-Bo.Effect of doping concentration and doping thickness on the structure of electronic state of the Si uniformly doped GaAs quantum well. Acta Physica Sinica, 2013, 62(15): 157301.doi:10.7498/aps.62.157301 |
[10] |
Luo Xiao-Dong, Di Guo-Qing.Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica, 2012, 61(20): 206803.doi:10.7498/aps.61.206803 |
[11] |
Hou Qing-Yu, Dong Hong-Ying, Ying Chun, Ma Wen.First-principles study on the effects of high Al doped on the band gap and absorption spectrum of ZnO. Acta Physica Sinica, 2012, 61(16): 167102.doi:10.7498/aps.61.167102 |
[12] |
Yue Lei-Lei, Chen Yu, Fan Guang-Hui, He Jiao, Zhao De-Xun, Liu Ying-Kai.Influence of defect states on band gaps of the 4340 steel in epoxy in two-dimensional phononic crystal. Acta Physica Sinica, 2011, 60(10): 106103.doi:10.7498/aps.60.106103 |
[13] |
Liu Fan-Yu, Liu Heng-Zhu, Liu Bi-Wei, Liang Bin, Chen Jian-Jun.Effect of doping concentration in p+ deep well on charge sharing in 90nm CMOS technology. Acta Physica Sinica, 2011, 60(4): 046106.doi:10.7498/aps.60.046106 |
[14] |
Zhao Yan, Shi Wei-Hua, Jiang Yue-Jin.Effect of defects outside the centre on dispersive properties of photonic band gap guiding photonic crystal fibers. Acta Physica Sinica, 2010, 59(9): 6279-6283.doi:10.7498/aps.59.6279 |
[15] |
Chen Sheng-Bing, Han Xiao-Yun, Yu Dian-Long, Wen Ji-Hong.Influences of different types of piezoelectric shunting circuits on band gaps of phononic beam. Acta Physica Sinica, 2010, 59(1): 387-392.doi:10.7498/aps.59.387 |
[16] |
Jiang Ai-Hua, Xiao Jian-Rong, Wang De-An.Influence of annealing on structure and optical band gap of nitrogen doping fluorinated amorphous carbon films. Acta Physica Sinica, 2008, 57(9): 6013-6017.doi:10.7498/aps.57.6013 |
[17] |
Mu Zhong-Fei, Wu Fu-Gen, Zhang Xin, Zhong Hui-Lin.Effect of translation group symmetry on phononic band gaps studied by supercell calculation. Acta Physica Sinica, 2007, 56(8): 4694-4699.doi:10.7498/aps.56.4694 |
[18] |
Xiao Jian-Rong, Xu Hui, Li Yan-Feng, Li Ming-Jun.Effect of nitrogen pressure on structure and optical band gap of copper nitride thin films. Acta Physica Sinica, 2007, 56(7): 4169-4174.doi:10.7498/aps.56.4169 |
[19] |
Ran Guang-Zhao, Chen Yuan, Chen Kai-Mao, Zhang Xiao-Lan, Liu Hong-Fei.Highly deep levels in solid C70/p-GaAs structures. Acta Physica Sinica, 2004, 53(10): 3498-3503.doi:10.7498/aps.53.3498 |
[20] |
.. Acta Physica Sinica, 2002, 51(2): 382-388.doi:10.7498/aps.51.382 |