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Guo Chun-Wen, Li Jun-Jie, Ma Yuan, Wang Jin-Cheng.Growth behaviors and forced modulation characteristics of dendritic sidebranches in directional solidification. Acta Physica Sinica, 2015, 64(14): 148101.doi:10.7498/aps.64.148101 |
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Li Shang-Jie, Chen Zheng, Yun Jiang-Juan, Zhang Jing.Phase-field crystal method investigated the dislocation annihilation and grain boundary migration in grain shrink process. Acta Physica Sinica, 2014, 63(12): 128101.doi:10.7498/aps.63.128101 |
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Zhu Shun-Ming, Gu Ran, Huang Shi-Min, Yao Zheng-Grong, Zhang Yang, Chen Bin, Mao Hao-Yuan, Gu Shu-Lin, Ye Jian-Dong, Zheng You-Dou.Influence and mechanism of H2 in the epitaxial growth of ZnO using metal-organic chemical vapor deposition method. Acta Physica Sinica, 2014, 63(11): 118103.doi:10.7498/aps.63.118103 |
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Fang Jia, Li Shuang-Liang, Xu Sheng-Zhi, Wei Chang-Chun, Zhao Ying, Zhang Xiao-Dan.Analysis on steady plasma process of high-rate microcrystalline silicon by optical emission spectroscopy. Acta Physica Sinica, 2013, 62(16): 168103.doi:10.7498/aps.62.168103 |
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Chen Cheng, Chen Zheng, Zhang Jing, Yang Tao.Simulation of morphological evolution and crystallographic tilt in heteroepitaxial growth using phase-field crystal method. Acta Physica Sinica, 2012, 61(10): 108103.doi:10.7498/aps.61.108103 |
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Li Tian-Wei, Liu Feng-Zhen, Zhu Mei-Fang.rf excited optical emission spectrum of radicals generated during hot wire chemical vapour deposition for the preparation of microcrystalline silicon thin film. Acta Physica Sinica, 2011, 60(1): 018103.doi:10.7498/aps.60.018103 |
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Ding Yan-Li, Zhu Zhi-Li, Gu Jin-Hua, Shi Xin-Wei, Yang Shi-E, Gao Xiao-Yong, Chen Yong-Sheng, Lu Jing-Xiao.Effect of deposition rate on the scaling behavior of microcrystalline silicon films prepared by very high frequency-plasma enhanced chemical vapor deposition. Acta Physica Sinica, 2010, 59(2): 1190-1195.doi:10.7498/aps.59.1190 |
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Zhang Fa-Rong, Zhang Xiao-Dan, Amanatides E., Mataras D., Zhao Jing, Zhao Ying.Study on the optical and electrical properties of plasma for the deposition of microcrystalline silicon. Acta Physica Sinica, 2008, 57(5): 3022-3026.doi:10.7498/aps.57.3022 |
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Guo Ping-Sheng, Chen Ting, Cao Zhang-Yi, Zhang Zhe-Juan, Chen Yi-Wei, Sun Zhuo.Low temperature growth of carbon nanotubes by chemical vapor deposition for field emission cathodes. Acta Physica Sinica, 2007, 56(11): 6705-6711.doi:10.7498/aps.56.6705 |
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Zeng Chun-Lai, Tang Dong-Sheng, Liu Xing-Hui, Hai Kuo, Yang Yi, Yuan Hua-Jun, Xie Si-Shen.Controllable preparation of SnO2 one-dimensional nanostructures by chemical vapor deposition. Acta Physica Sinica, 2007, 56(11): 6531-6536.doi:10.7498/aps.56.6531 |
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Yang Hang-Sheng.Surface growth mechanism of cubic boron nitride thin films prepared by plasma-enhanced chemical vapor deposition. Acta Physica Sinica, 2006, 55(8): 4238-4246.doi:10.7498/aps.55.4238 |
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Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun.Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica, 2005, 54(9): 4329-4333.doi:10.7498/aps.54.4329 |
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YE CHAO, NING ZHAO-YUAN, CHENG SHAN-HUA, KANG JIAN.STUDY ON α-C∶F FILMS DEPOSITED BY ELECTRON CYCLOTRONRESONANCE PLASMA CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 2001, 50(4): 784-789.doi:10.7498/aps.50.784 |
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ZHANG ZHI-HONG, GUO HUAI-XI, YU FEI-WEI, XIONG QI-HUA, YE MING-SHENG, FAN XIANG-JUN.PREPARATION OF CUBIC C3N4 THIN FILMS BY LOW-PRESSURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1998, 47(6): 1047-1051.doi:10.7498/aps.47.1047 |
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XIN YU, FAN SHU-PING, DI GUO-QING, SHEN MING-RONG, GAN ZHAO-QIANG.STUDIES OF CNx FILMS DEPOSITED BY MEANS OF MICROWAVE PLASMA CVD METHOD. Acta Physica Sinica, 1998, 47(1): 154-159.doi:10.7498/aps.47.154 |
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HAN LI, WANG XIAO-HUI, YU WEI, DONG LI-FANG, LI XIAO-WEI, FU GUANG-SHENG.CHARACTERIZATION STUDY OF TEXTURED DIAMOND FILMS GROWN ON SILICON (100) SUBSTRATE BY HOT FILAMENT CHEMICAL VAPOR DEPOSITION. Acta Physica Sinica, 1997, 46(11): 2206-2214.doi:10.7498/aps.46.2206 |
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ZHANG YA-FEI, CHEN GUANG-HUA.A STUDY ON THE SURFACE COVERAGE OF THE CHEMICAL VAPOR DEPOSITED DIAMOND BY HYDROGEN ATOMS. Acta Physica Sinica, 1996, 45(3): 539-544.doi:10.7498/aps.45.539 |
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LIU XIANG-NA, WU XIAO-WEI, BAO XI-MAO, HE YU-LIANG.PHOTOLUMINESCENCE FROM NANO-CRYSTALLITES OF SILICON FILMS PREPARED BY PECVD. Acta Physica Sinica, 1994, 43(6): 985-990.doi:10.7498/aps.43.985 |
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WANG WAN-LU, GAO JIN-TING, LIAO KE-JUN, LIU AN-MIN.STUDIES OF INTERNAL STRESS IN DIAMOND FILMS PREPA-RED BY DC PLASMA CHEMICAL VAPOUR DEPOSITION. Acta Physica Sinica, 1992, 41(11): 1906-1912.doi:10.7498/aps.41.1906 |
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Yu Wen-hai, Yang Yuan.INTERFACE EFFECT PETWEEN DIFFERENT PHASES IN THE PROCESS OF PHASE SEPARATION AND CRYSTALLIZATION OF AN AMORPHOUS Li+ CONDUCTOR. Acta Physica Sinica, 1986, 35(9): 1238-1242.doi:10.7498/aps.35.1238 |
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