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Song Jian, Li Feng, Deng Kai-Ming, Xiao Chuan-Yun, Kan Er-Jun, Lu Rui-Feng, Wu Hai-Ping.Density functional study on the stability and electronic structure of single layer Si6H4Ph2. Acta Physica Sinica, 2012, 61(24): 246801.doi:10.7498/aps.61.246801 |
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men, Wang Yue-Hu, Guo Hui.Stability of the intrinsic defects in unintentionally doped 4H-SiC epitaxial layer. Acta Physica Sinica, 2010, 59(5): 3542-3546.doi:10.7498/aps.59.3542 |
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Wang Xue-Mei, Qiu Dong-Yuan, Zhang Bo.The fast- and slow-scale stabilities and chaotic motion of H-bridge sine inverter. Acta Physica Sinica, 2009, 58(4): 2248-2254.doi:10.7498/aps.58.2248 |
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Xu Yan-Yue, Kong Guang-Lin, Zhang Shi-Bin, Hu Zhi-Hua, Zeng Xiang-Bo, Diao Hong-Wei, Liao Xian-Bo.Preparation and characterization of the stable nc-Si/a-Si:H films. Acta Physica Sinica, 2003, 52(6): 1465-1468.doi:10.7498/aps.52.1465 |
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WU XIAN-CHENG, WANG YIN-YUE.PROPERTIES OF a-SiCxNy∶H FILMS PRODUCED BY REACTIVE-SPUTTERING. Acta Physica Sinica, 1999, 48(1): 134-139.doi:10.7498/aps.48.134 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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QIAO HAO, ZI JIAN, XU ZHI-ZHONG, ZHANG KAI-MING.BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1993, 42(8): 1317-1323.doi:10.7498/aps.42.1317 |
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ZHAO YUE-CHAO, XIAN DING-CHANG.THERMAL STABILITY OF REACTIONS OF TRANSITION METALS WITH GaAa. Acta Physica Sinica, 1992, 41(9): 1482-1486.doi:10.7498/aps.41.1482 |
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WANG HONG, ZHU MEI-FANG, ZHENG DE-JUAN.CALCULATION OF ELECTRONIC POTENTIAL DISTRIBUTIONS AND PHOTOCONDUCTIVITY IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1992, 41(8): 1338-1344.doi:10.7498/aps.41.1338 |
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HUANG XU-GUANG, WANG HE-ZHOU, SHE WE-LONG, LI QING-XING, YU ZHEN-XIN, JIN BO, PENG SHAO-QI.PICOSECOND PHOTOLUMINESCENCE IN a-Si:H/a-SiNx:H MULTILAYERS. Acta Physica Sinica, 1991, 40(10): 1677-1682.doi:10.7498/aps.40.1677 |
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ZHU MEI-FANG, ZONG JUN, ZHANG XIU-ZEN.THE EFFECTS OF NITROGEN CONTENT OF a-SiNx:H ON THE INTERFACE PROPERTIES IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1991, 40(2): 253-261.doi:10.7498/aps.40.253 |
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ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
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WANG YIN-YUE, ZHANG FANG-QING, CHEN GUANG-HUA.A STUDY ON THE METASTABLE THERMAL DEFECTS IN REACTIVELY SPUTTERED a-SiGe:H FILMS. Acta Physica Sinica, 1990, 39(10): 1661-1664.doi:10.7498/aps.39.1661 |
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.LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica, 1989, 38(8): 1235-1244.doi:10.7498/aps.38.1235 |
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING.A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica, 1989, 38(5): 829-833.doi:10.7498/aps.38.829 |
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WANG ZHI-CHAO, TENG MIN-KANG, ZHANG SHU-YI, GE WANG-DA, QIU SHU-YE.THE DEFECTS AND THE NONRADIATIVE RECOMBINATION OF PHOTOGENERATED CARRIERS IN a-Si:H AND a-SiNx:H. Acta Physica Sinica, 1988, 37(8): 1291-1297.doi:10.7498/aps.37.1291 |
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI.ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica, 1988, 37(3): 481-484.doi:10.7498/aps.37.481 |
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WANG ZHI-CHAO, LIU XIANG-NA, FENG XIAO-MIE, GENG XI-SHENG.OPTICAL PROPERTIES OF THE a-Si:H/a-SiNx:H SUPERLATTICE FILMS. Acta Physica Sinica, 1988, 37(2): 189-196.doi:10.7498/aps.37.189 |
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WANG SHU-LIN, CHENG RU-GUANG.DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica, 1988, 37(7): 1119-1123.doi:10.7498/aps.37.1119 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |
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