| [1] |
Guo Rong- Rong, Lin Jin-Hai, Liu Li-Li, Li Shi-Wei, Wang Chen, Lin Hai-Jun.Effect of deep level defects on space charge distribution in CdZnTe crystals. Acta Physica Sinica, 2020, 69(22): 226103.doi:10.7498/aps.69.20200553 |
| [2] |
Zhang Shan, Hu Xiao-Ning.Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica, 2011, 60(6): 068502.doi:10.7498/aps.60.068502 |
| [3] |
Zhao You-Wen, Dong Zhi-Yuan.Generation and suppression of deep level defects in InP. Acta Physica Sinica, 2007, 56(3): 1476-1479.doi:10.7498/aps.56.1476 |
| [4] |
YUAN XIAN-ZHANG, PEI HUI-YUAN, LU WEI, LI NING, SHI GUO-LIANG, FANG JIA-XIONG, SHEN XUE-CHU.INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te. Acta Physica Sinica, 2001, 50(4): 775-778.doi:10.7498/aps.50.775 |
| [5] |
CHEN KAI-MAO, JIN SI-XUAN, JIA YONG-QIANG, QIU SU-JUAN, LU YU-NAN, HE MEI-FEN, LIU HONG-FEI.DEEP LEVELS AND FREE-CARRIER COMPENSATION IN NITROGEN-IMPLANTED GaAs. Acta Physica Sinica, 1996, 45(3): 491-498.doi:10.7498/aps.45.491 |
| [6] |
QIU SU-JUAN, CHEN KAI-MAO, WU LAN-QING.DEEP LEVELS IN Si-IMPLANTED SEMI-INSULATOR GALLIUM ARSENIDE. Acta Physica Sinica, 1993, 42(8): 1304-1310.doi:10.7498/aps.42.1304 |
| [7] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI.INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica, 1993, 42(8): 1324-1332.doi:10.7498/aps.42.1324 |
| [8] |
LI XIAN-HUANG, LU FANG, SUN HENG-HUI.VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159.doi:10.7498/aps.42.1153 |
| [9] |
QIAO HAO, ZI JIAN, XU ZHI-ZHONG, ZHANG KAI-MING.BAND STRUCTURE OF Si/Ge STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1993, 42(8): 1317-1323.doi:10.7498/aps.42.1317 |
| [10] |
CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI.DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE. Acta Physica Sinica, 1992, 41(11): 1870-1879.doi:10.7498/aps.41.1870 |
| [11] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, TAN XUE-QING.A METHOD FOR DETERMINING IF TWO OR MORE DEEP LEVELS BELONG TO THE SAME CENTER. Acta Physica Sinica, 1989, 38(9): 1391-1399.doi:10.7498/aps.38.1391 |
| [12] |
FAN XI-QING, ZHANG DE-XUAN, SHEN SAN-GUO.A1, T2 SYMMETRIC DEEP LEVEL WAVE FUNCTIONS IN 3c-SiC. Acta Physica Sinica, 1988, 37(2): 183-188.doi:10.7498/aps.37.183 |
| [13] |
FAN XI-QING, ZHANG DE-XUAN, SHEN SAN-GUO.THE INFLUENCE OF THE BAND STRUCTURE ON DEEP LEVEL WAVE FUNCTION. Acta Physica Sinica, 1988, 37(2): 177-182.doi:10.7498/aps.37.177 |
| [14] |
LI MING-FU, CHEN JIAN-XIN, YAO YU-SHU, BAI GUANG.HYDROSTATIC PRESSURE DEPENDENCE OF GOLD ACCEPTOR LEVELS IN Si. Acta Physica Sinica, 1985, 34(8): 1068-1074.doi:10.7498/aps.34.1068 |
| [15] |
FU CHUN-YIN, LU YONG-LING, ZENG SHU-RONG.RESPONSE OF THE MINORITY CARRIER IN THE SEMICONDUCTORS DLTS UNDER MAJORITY CARRIER PULSE CONDITION. Acta Physica Sinica, 1985, 34(12): 1559-1566.doi:10.7498/aps.34.1559 |
| [16] |
DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI.DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485.doi:10.7498/aps.33.477 |
| [17] |
MAO DE-QIANG, LI MING-FU, REN SHANG-YUAN.A1 SYMMETRIC DEEP LEVEL WAVEFUNCTION OF SUBSTITUTIONAL DEFECT PAIRS IN GaP. Acta Physica Sinica, 1984, 33(7): 897-907.doi:10.7498/aps.33.897 |
| [18] |
BAO QING-CHENG, WANG QI-MING, PENG HUAI-DE, ZHU LONG-DE, GAO JI-LIN.USING MOS STRUCTURE TO STUDY THE DEEP LEVEL OF QUARTERNARY MIXED CRYSTAL In0.75Ga0.25As0.58P0.42. Acta Physica Sinica, 1983, 32(9): 1220-1226.doi:10.7498/aps.32.1220 |
| [19] |
LI MING-FU, REN SHANG-YUAN, MAO DE-QIANG.THEORY OF T2 SYMMETRIC DEEP LEVEL WAVE FUNCTIONS IN Si. Acta Physica Sinica, 1983, 32(10): 1263-1272.doi:10.7498/aps.32.1263 |
| [20] |
ZHOU BING-LIN, WANG LE, SHAO YONG-FU, CHEN QI-YU.MEASUREMENT OF DEEP LEVEL TRAPS IN GaAs. Acta Physica Sinica, 1979, 28(3): 350-357.doi:10.7498/aps.28.350 |
下载: