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Liu Mao-Tong, Yang Ai-Ying, Sun Yu-Nan.Nonlinear processes in strong ultrashort pulse pumped semiconductor optical amplifier. Acta Physica Sinica, 2009, 58(2): 980-988.doi:10.7498/aps.58.980 |
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Li Bing, Liu Cai, Feng Liang-Huan, Zhang Jing-Quan, Zheng Jia-Gui, Cai Ya-Ping, Cai Wei, Wu Li-Li, Li Wei, Lei Zhi, Zeng Guang-Gen, Xia Geng-Pei.Deep level transient spectroscopy and photoluminescence studies of CdS/CdTe thin film solar cells. Acta Physica Sinica, 2009, 58(3): 1987-1991.doi:10.7498/aps.58.1987 |
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Zhao You-Wen, Dong Zhi-Yuan.Generation and suppression of deep level defects in InP. Acta Physica Sinica, 2007, 56(3): 1476-1479.doi:10.7498/aps.56.1476 |
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Li Yao-Yi, Cheng Mu-Tian, Zhou Hui-Jun, Liu Shao-Ding, Wang Qu-Quan, Xue Qi-Kun.Efficiency of single photon emission in three-level system of semiconductor quantum dots with pulsed excitation. Acta Physica Sinica, 2006, 55(4): 1781-1786.doi:10.7498/aps.55.1781 |
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Yang Lin-An, Zhang Yi-Men, Yu Chun-Li, Zhang Yu-Ming.Trapping effect modeling for SiC power MESFETs. Acta Physica Sinica, 2003, 52(2): 302-306.doi:10.7498/aps.52.302 |
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WANG CHUAN-MIN, WU JIN-LEI, XIA ZONG-JU, ZOU YING-HUA.OPTICAL TRANSIENT RESPONSE OF METALLIC ULTRAFINE PARTICLES EMBEDDED IN SEMICONDUCTOR THIN FILM. Acta Physica Sinica, 1996, 45(12): 2073-2081.doi:10.7498/aps.45.2073 |
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Chen Kai-mao, Jin Si-xuan, Qiu Su-juan.PROPERTIES OF MINORITY CARRIER TRAPS AND THE HOLE TRAPS IN SEMI-INSULATING LEC GaAs AFTER Si-AND Be-COIMPLANTATION. Acta Physica Sinica, 1994, 43(8): 1352-1359.doi:10.7498/aps.43.1352 |
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QIAO HAO, XU ZHI-ZHONG, ZHANG KAI-MING.DEEP LEVELS IN STRAINED Si AND Ge. Acta Physica Sinica, 1993, 42(11): 1830-1835.doi:10.7498/aps.42.1830 |
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LI XIAN-HUANG, LU FANG, SUN HENG-HUI.VALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY. Acta Physica Sinica, 1993, 42(7): 1153-1159.doi:10.7498/aps.42.1153 |
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WANG DE-NING, SHEN PENG-NIAN, WANG WEI-YUAN.THE EFFECT OF DEEP LEVEL TRAP ON PHOTO-TRANSIENT CHARACTERISTICS, EQUIVALENT NOISE CURRENT AND INCREMENT OF DRAIN CURRENT FOR FET. Acta Physica Sinica, 1987, 36(10): 1264-1272.doi:10.7498/aps.36.1264 |
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MAO DE-QIANG, REN SHANG-YUAN, LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL. Acta Physica Sinica, 1986, 35(6): 808-811.doi:10.7498/aps.35.808 |
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LI MING-FU.STRESS DEPENDENCE OF DEFECT LEVELS IN SEMICONDUCTORS. Acta Physica Sinica, 1985, 34(12): 1549-1558.doi:10.7498/aps.34.1549 |
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LI MING-FU, REN SHANG-YUAN, MAO DE-QIANG.DISTRIBUTION CHARACTERISTICS OF DEEP LEVEL WAVEFUNCTIONS IN BLOCH SPACE. Acta Physica Sinica, 1985, 34(4): 547-551.doi:10.7498/aps.34.547 |
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LI MING-FU, REN SHANG-YUAN, MAO DE-QIANG.THE BEHAVIOR OF DEEP LEVEL WAVEFUNCTIONS IN SHALLOW ENERGY REGION. Acta Physica Sinica, 1984, 33(6): 738-746.doi:10.7498/aps.33.738 |
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FU PAN-MING.THE TRANSIENT BEHAVIOR OF PROBE LASER PULSE IN A TWO-LEVEL SYSTEM STRONGLY DRIVEN BY A NEAR-RESONANT LASER PULSE. Acta Physica Sinica, 1982, 31(8): 1107-1112.doi:10.7498/aps.31.1107 |
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ZHANG YI-XIANG, HUO YU-PING.THE IMPURITY ENERGY LEVELS IN SEMICONDUCTORS. Acta Physica Sinica, 1966, 22(1): 29-46.doi:10.7498/aps.22.29 |
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