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Du An-Tian, Liu Ruo-Tao, Cao Chun-Fang, Han Shi-Xian, Wang Hai-Long, Gong Qian.Improving structure design of active region of InAs quantum dots by using InAs/GaAs digital alloy superlattice. Acta Physica Sinica, 2023, 72(12): 128101.doi:10.7498/aps.72.20230270 |
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Peng Hui, Li Ping, Pei Xiao-Yang, He Hong-Liang, Cheng He-Ping, Qi Mei-Lan.Experimental study of the spatial discontinuity of dynamic damage evolution. Acta Physica Sinica, 2013, 62(22): 226201.doi:10.7498/aps.62.226201 |
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Xing Yan-Hui, Deng Jun, Han Jun, Li Jian-Jun, Shen Guang-Di.Improving the quantum well properties with n-type InGaN/GaN superlattices layer. Acta Physica Sinica, 2009, 58(1): 590-595.doi:10.7498/aps.58.590 |
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Jing Qun, Zhang Jun, Wang Qing-Lin, Luo You-Hua.First principles study of lowest energy structures and electronic properties of GenB(n=12—19) clusters. Acta Physica Sinica, 2007, 56(8): 4477-4483.doi:10.7498/aps.56.4477 |
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Ge Gui-Xian, Jing Qun, Yang Zhi, Yan Yu-Li, Lei Xue-Ling, Zhao Wen-Jie, Wang Qing-Lin, Luo You-Hua.First-principles study of the lowest energy structures and electronic properties of NaBen (n=1—12) clusters. Acta Physica Sinica, 2006, 55(9): 4548-4552.doi:10.7498/aps.55.4548 |
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Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen.Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field. Acta Physica Sinica, 2006, 55(10): 5023-5029.doi:10.7498/aps.55.5023 |
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Ni Hai-Qiao, Xu Xiao-Hua, Zhang Wei, Xu Ying-Qiang, Niu Zhi-Chuan, Wu Rong-Han .Effects of Sb N and period on the electronic properties of GaAs/GaInNAsSb superlattices. Acta Physica Sinica, 2004, 53(5): 1474-1482.doi:10.7498/aps.53.1474 |
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SUN JIAN-GANG, GUAN SHAN, JI XI-PING, HE DA-REN, WANG BING-HONG, QU SHI-XIAN.NEW CRISES DUE TO DYNAMICAL DISCONTINUITY. Acta Physica Sinica, 1996, 45(12): 1970-1977.doi:10.7498/aps.45.1970 |
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KE SAN-HUANG, HUANG MEI-CHUN, WANG REN-ZHI.VALENCE-BAND OFFSETS AT St/Ge STRAINED HETEROINTERFACES UNDER DIFFERENT STRAIN CONDITIONS. Acta Physica Sinica, 1996, 45(1): 107-112.doi:10.7498/aps.45.107 |
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KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN.THEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES. Acta Physica Sinica, 1994, 43(1): 103-109.doi:10.7498/aps.43.103 |
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HUANG CHUN-HUI, CHEN PING, WANG XUN.PHOTOEMISSION STUDY OF VALENCE BAND DISCONTINUITY OF Si/GaP(Ⅲ)HETEROINTERFACE. Acta Physica Sinica, 1993, 42(10): 1654-1660.doi:10.7498/aps.42.1654 |
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KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN.ELECTRONIC STRUCTURE OF STRAINED SUPERLATTICES (InAs)n(lnP)n(001):ab initio LMTO CALCULATION. Acta Physica Sinica, 1993, 42(10): 1635-1641.doi:10.7498/aps.42.1635 |
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KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN.THE AVERAGE BOND ENERGY AND THE VALENCE-BAND EDGE OFFSET AT THE INTERFACE OF STRAINED SUPERLATTICE InAs/InP. Acta Physica Sinica, 1993, 42(9): 1510-1514.doi:10.7498/aps.42.1510 |
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PAN SHI-HONG, HUANG HUI, ZHANG CUN-ZHOU, R. N. SACKS.BAND-EDGE DISCONTINUITIES AND COUPLING BETWEEN WELLS FOR GaAs/Al0.23Ga0.77As DOUBLE QUANTUM WELLS. Acta Physica Sinica, 1992, 41(8): 1322-1329.doi:10.7498/aps.41.1322 |
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