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Wang Hai-Ling, Wang Ting, Zhang Jian-Jun.Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica, 2019, 68(11): 117301.doi:10.7498/aps.68.20190317 |
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Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
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Zhang Yan-Hui, Chen Ping-Ping, Li Tian-Xin, Yin Hao.InNSb single crystal films prepared on GaAs (001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2010, 59(11): 8026-8030.doi:10.7498/aps.59.8026 |
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Ding Zhi-Bo, Yao Shu-De, Wang Kun, Cheng Kai.Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1－xN and AlN buffer layers grown on Si(111). Acta Physica Sinica, 2006, 55(6): 2977-2981.doi:10.7498/aps.55.2977 |
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Chen Nai-Bo, Wu Hui-Zhen, Qiu Dong-Jiang.Structural and optical studies of MgxZn1-xO films grown on sapphire. Acta Physica Sinica, 2004, 53(1): 311-315.doi:10.7498/aps.53.311 |
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Zou Lu, Wang Lei, Huang Jing-Yun, Zhao Bing-Hui, Ye Zhi-Zhen.Structural and photoluminesenct properties of Zn1-xMgxO thin film on silicon. Acta Physica Sinica, 2003, 52(4): 935-938.doi:10.7498/aps.52.935 |
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LIU HONG-FEI, CHEN HONG, LI ZHI-QIANG, WAN LI, HUANG QI, ZHOU JUN-MING, LUO YI, HAN YING-JUN.EPITAXIALL GROWTH OF CUBIC AND HEXAGONAL GaN FILMS ON GaAs(001) SUBSTRATES BY MBE. Acta Physica Sinica, 2000, 49(6): 1132-1135.doi:10.7498/aps.49.1132 |
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YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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XU ZHI-ZHONG.ELECTRONIC STRUCTURES AND OPTICAL PROPERTIES OF SUPERLATTICES (Si_2)_4/(GaAs)_4 GROWN ON Si(00l). Acta Physica Sinica, 1995, 44(12): 1984-1993.doi:10.7498/aps.44.1984 |
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Xu Zhi-Zhong.. Acta Physica Sinica, 1995, 44(7): 1141-1147.doi:10.7498/aps.44.1141 |
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XU ZHI-ZHONG.THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica, 1994, 43(7): 1111-1117.doi:10.7498/aps.43.1111 |
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DUAN WEN-HUI, WANG SHI-FAN, NI JUN, GU BING-LIN, ZHU JIA-LIN.ORDERED STRUCTURES AND ELECTRONIC PROPERTIES OF (GaAs)1-xGe2x SYSTEM. Acta Physica Sinica, 1993, 42(5): 809-816.doi:10.7498/aps.42.809 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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XU ZHI-ZHONG.OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica, 1993, 42(5): 824-831.doi:10.7498/aps.42.824 |
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WANG REN-ZHI, HUANG MEI-CHUN.ON THE CORRESPONDENCE OF BAND EIGENSTATES OF (GaAs)1(AlAs)1(001) SUPERLATTICE AND Ga0.5Al0.5As ALLOY. Acta Physica Sinica, 1991, 40(6): 949-956.doi:10.7498/aps.40.949 |
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WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN.AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(9): 1514-1519.doi:10.7498/aps.40.1514 |
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ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN.SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(1): 56-63.doi:10.7498/aps.40.56 |
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TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG.X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1991, 40(3): 441-448.doi:10.7498/aps.40.441 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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