| [1] |
Wang Hai-Ling, Wang Ting, Zhang Jian-Jun.Controllable growth of InAs quantum dots on patterned GaAs (001) substrate. Acta Physica Sinica, 2019, 68(11): 117301.doi:10.7498/aps.68.20190317 |
| [2] |
Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
| [3] |
WU DI, LIU GUO-LEI, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG, SHEN XIAO-LIANG.EPITAXIAL STRUCTURES AND MAGNETIC PROPERTIES OF Co100-xMnx ALLOYS ON GaAs(001) SURFACE. Acta Physica Sinica, 1999, 48(12): 2320-2326.doi:10.7498/aps.48.2320 |
| [4] |
JING CHAO, WU YI-ZHENG, DONG GUO-SHENG, JIN XIAO-FENG.STRUCTURES AND MAGNETIC PROPERTIES OF THE FexMn1-x ALLOYS EPITAXIALLY GROWN ON GaAs(001) Surface. Acta Physica Sinica, 1999, 48(2): 289-295.doi:10.7498/aps.48.289 |
| [5] |
YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
| [6] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
| [7] |
XU ZHI-ZHONG.THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica, 1996, 45(1): 126-132.doi:10.7498/aps.45.126 |
| [8] |
XU ZHI-ZHONG.ELECTRONIC STRUCTURES AND OPTICAL PROPERTIES OF SUPERLATTICES (Si_2)_4/(GaAs)_4 GROWN ON Si(00l). Acta Physica Sinica, 1995, 44(12): 1984-1993.doi:10.7498/aps.44.1984 |
| [9] |
XU ZHI-ZHONG.THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica, 1994, 43(7): 1111-1117.doi:10.7498/aps.43.1111 |
| [10] |
KE SAN-HUANG, WANG REN-ZHI, HUANG MEI-CHUN.ELECTRONIC STRUCTURE OF STRAINED SUPERLATTICES (InAs)n(lnP)n(001):ab initio LMTO CALCULATION. Acta Physica Sinica, 1993, 42(10): 1635-1641.doi:10.7498/aps.42.1635 |
| [11] |
ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
| [12] |
XU ZHI-ZHONG.OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica, 1993, 42(5): 824-831.doi:10.7498/aps.42.824 |
| [13] |
WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN.AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(9): 1514-1519.doi:10.7498/aps.40.1514 |
| [14] |
WANG REN-ZHI, HUANG MEI-CHUN.ON THE CORRESPONDENCE OF BAND EIGENSTATES OF (GaAs)1(AlAs)1(001) SUPERLATTICE AND Ga0.5Al0.5As ALLOY. Acta Physica Sinica, 1991, 40(6): 949-956.doi:10.7498/aps.40.949 |
| [15] |
ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN.SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(1): 56-63.doi:10.7498/aps.40.56 |
| [16] |
TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG.X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1991, 40(3): 441-448.doi:10.7498/aps.40.441 |
| [17] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
| [18] |
WANG LI-JUN, HOU HONG-QI, ZHOU JUN-MING, TANG RU-MING, LU ZHI-DONG, WANG YAN-YUN, HUANG YI.PHOTOLUMINESCENCE STUDIES ON InxGa1-xAs-GaAs STRAINED QUANTUM WELLS STRUCTURE UNDER HYDROSTATIC PRESSURE. Acta Physica Sinica, 1989, 38(7): 1086-1092.doi:10.7498/aps.38.1086 |
| [19] |
XU ZHANG-LONG, LIU GU, JI ZHEN-GUO, ZHOU XIAO-XIA.A ARUPS INVESTIGATION OF TWO SURFACE SUPERSTRU-CTURES (4×1)-O AND (2×2)-S ON VANADIUM(001) SURFACES. Acta Physica Sinica, 1988, 37(2): 311-317.doi:10.7498/aps.37.311 |
| [20] |
Xue Fang-shi.ENERGY BAND CALCULATION FOR GaAs, GaP AND GaAsxP1-x. Acta Physica Sinica, 1986, 35(10): 1315-1321.doi:10.7498/aps.35.1315 |
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