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Lü Tie-Yu, Chen Jie, Huang Mei-Chun.Band structure of Si-based superlattices Si1-xSnx/Si. Acta Physica Sinica, 2010, 59(7): 4843-4848.doi:10.7498/aps.59.4843 |
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Sun Wei-Feng, Li Mei-Cheng, Zhao Lian-Cheng.First-principles investigation of carrier Auger lifetime and impact ionization rate in narrow-gap superlattices. Acta Physica Sinica, 2010, 59(8): 5661-5666.doi:10.7498/aps.59.5661 |
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YUAN JIN-SHE, CHEN GUANG-DE, QI MING, LI AI-ZHEN, XU ZHUO.XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE. Acta Physica Sinica, 2001, 50(12): 2429-2433.doi:10.7498/aps.50.2429 |
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YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
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XU ZHI-ZHONG.THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica, 1996, 45(1): 126-132.doi:10.7498/aps.45.126 |
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GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
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Xu Zhi-Zhong.. Acta Physica Sinica, 1995, 44(7): 1141-1147.doi:10.7498/aps.44.1141 |
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CHEN WEI-DE, GUI YU-DE.DETERMINATION OF AlxGa1-xAs AUGER SENSITIVITY FACTORS. Acta Physica Sinica, 1994, 43(4): 673-677.doi:10.7498/aps.43.673 |
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XU ZHI-ZHONG.THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica, 1994, 43(7): 1111-1117.doi:10.7498/aps.43.1111 |
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XU ZHI-ZHONG.OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica, 1993, 42(5): 824-831.doi:10.7498/aps.42.824 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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ZHAO RU-GUANG, YANG WEI-SHENG.TUNABLE-SAMPLING-DEPTH ELECTRON ENERGY LOSS SPECTROSCOPY AND AUGER ELECTRON SPECTROSC-OPY STUDIES OF Pb/Ni(001) INTERFACE. Acta Physica Sinica, 1992, 41(7): 1125-1131.doi:10.7498/aps.41.1125 |
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SHI YI-SHENG, ZHAO TE-XIU, LIU HONG-TU, WANG XIAO-PING.XPS AND AES STUDY FOR Pd/W/Si(lll) BILAYER INTERFACE. Acta Physica Sinica, 1992, 41(11): 1849-1855.doi:10.7498/aps.41.1849 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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ZHONG ZHAN-TIAN, WANG DA-WEN, LIAO XIAN-BO, FAN YUE, LI CHENG-FANG, MOU SHAN-MING.XPS AND AES STUDY FOR Au/a-Si:H INTERFACE. Acta Physica Sinica, 1991, 40(2): 275-280.doi:10.7498/aps.40.275 |
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TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG.X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1991, 40(3): 441-448.doi:10.7498/aps.40.441 |
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ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN.SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(1): 56-63.doi:10.7498/aps.40.56 |
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GUO YUAN-HENG, CHEN LAN-FENG.SURFACE STUDY OF SUPERCONDUCTING Nb-Ge FILM BY AUGER ELECTRON SPECTROSCOPY AND ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS. Acta Physica Sinica, 1988, 37(7): 1196-1102.doi:10.7498/aps.37.1196 |
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WANG QIAN, ZHANG QIANG-JI, HUA ZHONG-YI.A NEW METHOD TO DETERMINE BACKSCATTERING FACTORS FOR QUANTITATIVE AUGER ANALYSIS. Acta Physica Sinica, 1986, 35(7): 914-921.doi:10.7498/aps.35.914 |
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XU ZHI-ZHONG, DAI DAO-XUAN, ZOU HUI-LIANG.THE LINE SHAPE ANALYSIS FOR Si L2,3 VV AUGER SPECTRA OF CLEAVED Si (111) SURFACES WITH OXYGEN ADSORBED. Acta Physica Sinica, 1985, 34(1): 32-38.doi:10.7498/aps.34.32 |
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