[1] |
You Ming-Hui, Li Xue, Li Shi-Jun, Liu Guo-Jun.Growth of lattice matched InAs/AlSb superlattices by molecular beam epitaxy. Acta Physica Sinica, 2023, 72(1): 014203.doi:10.7498/aps.72.20221383 |
[2] |
Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan.Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica, 2015, 64(17): 177802.doi:10.7498/aps.64.177802 |
[3] |
Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1-xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
[4] |
YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
[5] |
GUI YONG-SHENG, ZHENG GUO-ZHEN, CHU JUN-HAO, GUO SHAO-LING, TANG DING-YUAN.MAGNETO TRANSPORT CHARACTERIZATION OF MBE GROWN Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(8): 1631-1635.doi:10.7498/aps.46.1631 |
[6] |
NIU ZHI-CHUAN, ZHOU ZENG-QI, LIN YAO-WANG, LI XIN-FENG, ZHANG YI, HU XIONG WEI, Lü ZHEN-DONG, YUAN ZHI-LIANG, XU ZHONG-YING.InGaAs/GaAs STRAINED RIDGE QUANTUM WIRES GROWN-BY MBE ON NONPLANAR SUBSTRATE. Acta Physica Sinica, 1997, 46(5): 969-974.doi:10.7498/aps.46.969 |
[7] |
YU MIN-FENG, YANG YU, SHEN WEN-ZHONG, ZHU HAI-JUN, GONG DA-WEI, SHENG CHI, WANG XUN.INTERSUBBAND ABSORPTION IN p-TYPE GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS. Acta Physica Sinica, 1997, 46(4): 740-746.doi:10.7498/aps.46.740 |
[8] |
XU ZHI-ZHONG.THE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES. Acta Physica Sinica, 1996, 45(1): 126-132.doi:10.7498/aps.45.126 |
[9] |
GUI QIAN, HUANG QI, CHEN HONG, ZHOU JUN-MING.Si AND GexSi1-x GROWTH MODE STUDY BY RHEED ON H-TERMINATED VICINAL Si SUBSTRATE. Acta Physica Sinica, 1996, 45(4): 647-654.doi:10.7498/aps.45.647 |
[10] |
Xu Zhi-Zhong.. Acta Physica Sinica, 1995, 44(7): 1141-1147.doi:10.7498/aps.44.1141 |
[11] |
XU ZHI-ZHONG.THE BOND LENGTHS AND THEIR EFFECTS ON THE ELECTRONIC ENERGY BAND STRUCTURES IN THE GexSi1-x ALLOYS. Acta Physica Sinica, 1994, 43(7): 1111-1117.doi:10.7498/aps.43.1111 |
[12] |
XU ZHI-ZHONG.OPTICAL PROPERTIES OF COHERENTLY STRAINED ALLOYS GexSi1-x ON Si (001) SUBSTRATES. Acta Physica Sinica, 1993, 42(5): 824-831.doi:10.7498/aps.42.824 |
[13] |
ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
[14] |
WEI XING, JIANG WEI-DONG, ZHOU GUO-LIANG, YU MING-REN, WANC XUN.AUGER DEPTH PROFILE ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(9): 1514-1519.doi:10.7498/aps.40.1514 |
[15] |
ZHOU GUO-LIANG, SHEN XIAO-LIANG, SHENG CHI, JIANG WEI-DONG, YU MING-REN.SMALL-ANGLE X-RAY DIFFRACTION ANALYSIS OF GexSi1-x/Si SUPERLATTICE. Acta Physica Sinica, 1991, 40(1): 56-63.doi:10.7498/aps.40.56 |
[16] |
TIAN LIANG-GUANG, ZHU NAN-CHANG, CHEN JING-YI, LI RUN-SHEN, XU SHUN-SHENG, ZHOU GUO-LIANG.X-RAY DOUBLE-CRYSTAL DIFFRACTION STUDY OF HIGH QUALITY GexSi1-x/Si STRAINED LAYER SUPERLATTICE. Acta Physica Sinica, 1991, 40(3): 441-448.doi:10.7498/aps.40.441 |
[17] |
Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
[18] |
CHEN KE-MING, JIN GAO-LONG, SHENG CHI, YU MING-REN.THE GROWTH DYNAMICS OF Si(111) MBE STUDIED BY RHEED INTENSITY OSCILLATIONS. Acta Physica Sinica, 1990, 39(12): 1945-1951.doi:10.7498/aps.39.1945 |
[19] |
ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
[20] |
.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |