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Xiao Jia-Xing, Lu Jun, Zhu Li-Jun, Zhao Jian-Hua.Perpendicular magnetic properties of ultrathin L10-Mn1.67Ga films grown by molecular-beam epitaxy. Acta Physica Sinica, 2016, 65(11): 118105.doi:10.7498/aps.65.118105 |
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Yang Wen-Xian, Ji Lian, Dai Pan, Tan Ming, Wu Yuan-Yuan, Lu Jian-Ya, Li Bao-Ji, Gu Jun, Lu Shu-Long, Ma Zhong-Quan.Study on photoluminescence properties of 1.05 eV InGaAsP layers grown by molecular beam epitaxy. Acta Physica Sinica, 2015, 64(17): 177802.doi:10.7498/aps.64.177802 |
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Zhu Meng-Yao, Lu Jun, Ma Jia-Lin, Li Li-Xia, Wang Hai-Long, Pan Dong, Zhao Jian-Hua.Molecular-beam epitaxy of high-quality diluted magnetic semiconductor (Ga, Mn)Sb single-crystalline films. Acta Physica Sinica, 2015, 64(7): 077501.doi:10.7498/aps.64.077501 |
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Su Shao-Jian, Zhang Dong-Liang, Zhang Guang-Ze, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming.High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy. Acta Physica Sinica, 2013, 62(5): 058101.doi:10.7498/aps.62.058101 |
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Yan Feng-Ping, Zheng Kai, Wang Lin, Li Yi-Fan, Gong Tao-Rong, Jian Shui-Sheng, K. Ogata, K. Koike, S. Sasa, M. Inoue, M. Yano.Measurement of thickness and refractive index of Zn1-xMgxO film grown on sapphire substrate by molecular beam epitaxy. Acta Physica Sinica, 2007, 56(7): 4127-4131.doi:10.7498/aps.56.4127 |
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Xu Xiao-Hua, Niu Zhi-Chuan, Ni Hai-Qiao, Xu Ying-Qiang, Zhang Wei, He Zheng-Hong, Han Qin, Wu Rong-Han, Jiang De-Sheng.Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy. Acta Physica Sinica, 2005, 54(6): 2950-2954.doi:10.7498/aps.54.2950 |
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Wang Qing-Xue, Yang Jian-Rong, Sun Tao, Wei Yan-Feng, Fang Wei-Zheng, He Li.Relationship between lattice parameters and compositions of molecular beam epitaxial Hg1-xCdxTe films. Acta Physica Sinica, 2005, 54(8): 3726-3733.doi:10.7498/aps.54.3726 |
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HUANG SHI-HUA, MO YU-DONG.RESONANT RAMAN SCATTERING OF Hg1-xCdxTe . Acta Physica Sinica, 2001, 50(5): 964-967.doi:10.7498/aps.50.964 |
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LU LI-WU, ZHANG YAN-HUA, GE WEI-KUN, I.K.SOU, Y.WANG, J.WANG, Z.H.MA, W.S.CHEN, G.K.L.WONG.DEEP ELECTRON STATES IN n-TYPE Al-DOPED ZnS1-xTex GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(2): 286-293.doi:10.7498/aps.47.286 |
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CHANG YONG, CHU JUN-HAO, TANG WEN-GUO, SHEN WEN-ZHONG, TANG DING-YUAN.PHOTOLUMINESCENCE OF Sb-DOPED Hg1-xCdxTe. Acta Physica Sinica, 1997, 46(5): 959-963.doi:10.7498/aps.46.959 |
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LI BIAO, CHU JUN-HAO, ZHU JI-QIAN, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN.CHARACTERIZATION OF Hg1-xCdxTe EPITAXIAL FILMS ON VARIOUS VICINAL PLANES. Acta Physica Sinica, 1997, 46(6): 1168-1173.doi:10.7498/aps.46.1168 |
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LI BIAO, CHU JUN-HAO, SHI XIAO-HONG, CHEN XIN-QIANG, CAO JU-YING, TANG DING-YUAN.FREE CARRIER ABSORPTION SPECTRA FOR Hg1-xCdxTe EPILAYERS. Acta Physica Sinica, 1996, 45(9): 1430-1437.doi:10.7498/aps.45.1430 |
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WEI YA-YI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.MAGNETIC-FIELD-INDUCED METAL-INSULATOR TRANSITION AND THERMALLY ACTIVATED ELECTRONIC TRANSPORT IN LOW COMPENSATED n-Hg1-xCdxTe. Acta Physica Sinica, 1994, 43(12): 2031-2037.doi:10.7498/aps.43.2031 |
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ZHOU GUO-LIANG, SHENG CHI, FAN YONG-LIANG, JIANG WEI-DONG, YU MING-RBN.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERI-ZATION OF GexSi1-x/Si STRAINED-LAYER SUPERLATTICES. Acta Physica Sinica, 1993, 42(7): 1121-1128.doi:10.7498/aps.42.1121-2 |
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ZHOU JIE, LU LI-WU, HAN ZHI-YONG, LIANG JI-BEN.A STUDY OF ELECTRONIC CHARACTERIZATION IN MOLECULAR BEAM EPITAXIALLY GROWN GaAs ON Si. Acta Physica Sinica, 1991, 40(11): 1827-1832.doi:10.7498/aps.40.1827 |
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Zhou Guo-liang Sheng Chi Fan Yong-liang Jiang Wei-dong Yu Ming-reng.MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF Ge_xSi_1-x_/Si STRAINED一AYER SUPERLATTICES. Acta Physica Sinica, 1991, 40(7): 1121-1128.doi:10.7498/aps.40.1121 |
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ZONG XIANG-FU, QIU SHAO-XIONG, YANG HENG-QING, HUANG CHANG-HE, CHEN JUN-YI, HU GANG, WU ZHONG-CHI.THE GROWTH OF GaSb/AlSb/GaAs STRAINED LAYER HETEROSTRUCTURES BY MBE. Acta Physica Sinica, 1990, 39(12): 1959-1964.doi:10.7498/aps.39.1959 |
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.INTERFACIAL PROPERTIES OF Si/GaP(111) HETEROJUNCT10N GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1989, 38(8): 1265-1270.doi:10.7498/aps.38.1265 |
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ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN.SHUBNIKOV-DE HAAS OSCILLATION IN n-Hg1-xCdxTe. Acta Physica Sinica, 1987, 36(1): 114-119.doi:10.7498/aps.36.114 |
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Fu Rou-li.LOW FREQUENCY ABSORPTION BAND IN Hg1-xCdxTe. Acta Physica Sinica, 1986, 35(10): 1299-1305.doi:10.7498/aps.35.1299 |